ON NVMFS5833N Single nâ channel power mosfet Datasheet

NVMFS5833N
Power MOSFET
40 V, 7.5 mW, 86 A, Single N−Channel,
SO−8FL
Features
•
•
•
•
•
•
Low RDS(on)
Low Capacitance
Optimized Gate Charge
AEC−Q101 Qualified and PPAP Capable
NVMFS5833NWF − Wettable Franks Option for Enhanced Optical
Inspection
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
40 V
7.5 mW @ 10 V
86 A
D (5)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
"20
V
ID
86
A
Parameter
Continuous Drain Current RYJ−mb
(Notes 1, 2, 3 & 4)
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Continuous Drain Current RqJA
(Notes 1, 3 & 4)
Power Dissipation
RqJA (Notes 1 & 3)
Pulsed Drain Current
Tmb = 25°C
Steady
State
Tmb = 100°C
Tmb = 25°C
Steady
State
N−CHANNEL MOSFET
PD
ID
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, IL(pk) = 36 A, L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING DIAGRAM
D
A
16
1
11
PD
TA = 100°C
TA = 25°C, tp = 10 ms
W
112
56
TA = 100°C
TA = 25°C
S (1,2,3)
61
Tmb = 100°C
TA = 25°C
G (4)
W
3.7
1.8
IDM
324
A
TJ, Tstg
−55 to
175
°C
IS
86
A
EAS
65
mJ
TL
260
°C
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
5833
xx
A
Y
W
ZZ
Junction−to−Ambient − Steady State (Note 3)
Symbol
Value
Unit
RYJ−mb
1.3
°C/W
RqJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as
1 second are higher but are dependent on pulse duration and duty cycle/
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
D
D
= Specific Device Code
= N (NVMFS5833N) or
= WF (NVMFS5833NWF)
= Assembly Location
= Year
= Work Week
= Lot Traceability
Package
Shipping†
NVMFS5833NT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NVMFS5833NT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
NVMFS5833NWFT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NVMFS5833NWFT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
Device
THERMAL RESISTANCE MAXIMUM RATINGS
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
D
5833xx
AYWZZ
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
S
S
S
G
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NVMFS5833N/D
NVMFS5833N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
32.6
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
Gate−to−Source Leakage Current
V
±100
mA
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
2.0
3.5
−7.6
V
mV/°C
RDS(on)
VGS = 10 V, ID = 40 A
6.2
gFS
VDS = 5 V, ID = 5 A
38
S
1714
pF
Forward Transconductance
7.5
mW
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
144
Total Gate Charge
QG(TOT)
32.5
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
9
td(on)
10.23
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 10 V, VDS = 32 V,
ID = 40 A
210
nC
2.77
7.37
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDS = 20 V,
ID = 40 A, RG = 2.5 W
tf
ns
19.5
23.60
3.00
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 40 A
TJ = 25°C
TJ = 125°C
0.85
QRR
V
0.7
23.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 40 A
1.2
ns
13.5
10
14
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS5833N
TYPICAL CHARACTERISTICS
110
110
TJ = 25°C
5.5 V
80
VGS = 6 V
70
60
4.5 V
50
40
30
4.0 V
20
10
0
0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS = 3 V
100
5.0 V
90
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
8V
10 V
100
90
80
70
60
50
30
20
10
0
3.0
TJ = 25°C
40
TJ = 125°C
1
23
21
ID = 40 A
TJ = 25°C
19
17
15
13
11
9
7
5
4
5
7
6
9
8
5
6
2
3
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
7
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 1. On−Region Characteristics
TJ = −55°C
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
6.4
TJ = 25°C
6.3
6.2
6.1
VGS = 10 V
6.0
5.9
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID = 40 A
1.8
VGS = 10 V
VGS = 0 V
10000
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
100000
2.0
1.6
1.4
1.2
1.0
TJ = 150°C
TJ = 125°C
1000
TJ = 85°C
100
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150 175
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NVMFS5833N
2200
C, CAPACITANCE (pF)
VGS = 0 V
Ciss
2000
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
TJ = 25°C
1800
1600
1400
1200
1000
800
Coss
600
400
200
0
Crss
15
25
5
10
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
10
QT
8
6
Qgs
4
VGS = 10 V
VDD = 32 V
ID = 40 A
TJ = 25°C
2
0
0
30
4
Figure 7. Capacitance Variation
8
12
16
20
24
Qg, TOTAL GATE CHARGE (nC)
28
32
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
20
VDD = 20 V
ID = 40 A
VGS = 10 V
18
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgd
100
td(off)
tr
10
td(on)
tf
VGS = 0 V
16
14
12
10
8
6
TJ = 125°C
4
2
TJ = 25°C
0
1
1
10
RG, GATE RESISTANCE (W)
0.4
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.6
0.7
0.8
0.5
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
0.9
Figure 10. Diode Forward Voltage vs. Current
100
100
10
TJ (initial) = 25°C
100 ms
IPEAK (A)
ID, DRAIN CURRENT (A)
10 ms
VGS = 10 V
TC = 25°C
2 oz. 650 mm2
Cu Pad
1 ms
1
10 ms
0.1
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
TJ (initial) = 85°C
10
1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
1E−06
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1E−04
1E−05
TIME IN AVALANCHE (s)
Figure 12. Avalanche Characteristics
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4
1E−03
NVMFS5833N
TYPICAL CHARACTERISTICS
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
0.2
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
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5
1
10
100
1000
NVMFS5833N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE K
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
0.10 C
SIDE VIEW
8X
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
1.000
e/2
L
1
4
0.965
K
1.330
2X
0.905
2X
E2
PIN 5
(EXPOSED PAD)
G
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
SOLDERING FOOTPRINT*
DETAIL A
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
L1
M
0.495
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVMFS5833N/D