MGCHIP MDF1752 N-channel trench mosfet 40v, 50a, 8.0m(ohm) Datasheet

N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
General Description
Features



The MDF1752 uses advanced MagnaChip’s trench
MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability
Low RDS(ON), low gate charge can be offering superior
benefit in the application.
VDS = 40V
ID = 50A @VGS = 10V
RDS(ON)
< 8.0mΩ @ VGS = 10V
< 10.5mΩ @ VGS = 4.5V
Applications


Inverters
General purpose applications
D
G
G DS
S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
o
TC=25 C
Continuous Drain Current
(Note 1)
Rating
Unit
VDSS
40
V
VGSS
±20
V
(a)
50
o
TC=100 C
o
TA=25 C
(b)
31.8
ID
o
TA=100 C
Pulsed Drain Current
8.0
IDM
100
o
TC=25 C
Power Dissipation for Single Operation
o
TA=25 C
12.8
PD
o
(Note 2)
Junction and Storage Temperature Range
W
2
TA=100 C
Single Pulse Avalanche Energy
A
32
o
TC=100 C
A
12.6
0.8
EAS
153
TJ, Tstg
mJ
o
-55~+150
C
Thermal Characteristics
Characteristics
Symbol
Rating
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
Thermal Resistance, Junction-to-Case
RθJC
3.9
Mar 2016. Version 2.1
1
Unit
o
MagnaChip Semiconductor Ltd.
C/W
MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
MDF1752
Part Number
Temp. Range
MDF1752TH
o
-55~150 C
Package
Packing
RoHS Status
TO-220F
Tube
Halogen Free
Electrical Characteristics (TJ =25oC unless otherwise noted)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
40
-
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.0
1.7
3.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = 32V, VGS = 0V
-
-
1
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
0.1
VGS = 10V, ID = 14A
-
6.1
8.0
VGS = 4.5V, ID = 11A
-
8.2
10.5
VDS = 5V, ID = 14A
-
58
-
-
26.4
-
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
gFS
μA
mΩ
S
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
3.6
-
Gate-Drain Charge
Qgd
VDS = 20V, ID = 14A, VGS = 10V
-
6.8
-
Input Capacitance
Ciss
-
1480
-
Reverse Transfer Capacitance
Crss
-
113
-
Output Capacitance
Coss
-
243
-
Turn-On
td(on)
-
9
-
-
21
-
-
31
-
-
18
-
-
0.8
1.2
-
26
-
ns
-
11
-
nC
Delay Time
Turn-On Rise Time
tr
Trun-Off Delay Time
td(off)
Trun-Off Fall Time
VDS = 20V, VGS = 0V, f = 1.0MHz
nC
VGS = 10V ,VDS = 20V, ID = 1A ,
RGEN = 6Ω
tf
pF
ns
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
IS = 14A, VGS = 0V
IF = 14A, di/dt = 100A/μs
Note :
1. PD is based on TJ(MAX)=150°C
a. PD (TC=25°C) is based on RθJC,
b. PD (TA=25°C) is based on RθJA
2. Starting TJ=25°C, L=1mH, IAS=17.5A, VDD=40V, VGS=10V
Mar 2016. Version 2.1
2
MagnaChip Semiconductor Ltd.
V
MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
Ordering Information
3.0
4.0V
4.5V
2.8
VGS = 10V
Normalized
Drain-Source On-Resistance
ID, Drain Current [A]
80
5.0V
6.0V
60
3.5V
40
20
VGS = 3V
2.6
3.5V
2.4
2.2
2.0
4.0V
1.8
1.6
5.0V
1.4
6.0V
4.5V
1.2
10V
1.0
3.0V
0.8
0
0.0
0.5
1.0
1.5
2.0
0.6
2.5
0
20
40
VDS, Drain-Source Voltage [V]
60
80
100
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
20.0
1.6
1. VGS = 10 V
2. ID = 14 A
1.4
RDS(ON) [mΩ ],
Drain-Source On-Resistance
RDS(ON), (Normalized)
Drain-Source On-Resistance
※ Notes :
1.2
1.0
0.8
17.5
15.0
TA = 125
℃
12.5
10.0
TA = 25
℃
7.5
0.6
-50
-25
0
25
50
75
100
125
5.0
150
2
4
o
Fig.3 On-Resistance Variation with
Temperature
8
10
Fig.4 On-Resistance Variation with
Gate to Source Voltage
3
10
100
※ Notes :
※ Notes :
VDS = 5V
2
VGS = 0V
IDR, Reverse Drain Current [A]
10
80
ID, Drain Current [A]
6
VGS, Gate to Source Volatge [V]
TJ, Junction Temperature [ C]
60
TA=125
℃
40
25
℃
-55
℃
20
1
10
0
10
-1
10
TA=125
℃
25
℃
-2
-55
10
℃
-3
10
-4
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
4.5
VGS, Gate-Source Voltage [V]
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Fig.5 Transfer Characteristics
Mar 2016. Version 2.1
0.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
MagnaChip Semiconductor Ltd.
MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
100
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note : ID = 14A
1.6n
8
Ciss
10V
6
VDS = 20V
Capacitance [F]
VGS, Gate-Source Voltage [V]
MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
2.0n
10
30V
4
1.2n
800.0p
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
400.0p
2
Coss
Crss
0.0
0
0
10
20
30
0
40
10
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
10
I(AS), AVALANCHE CURRENT (A)
ID, Drain Current [A]
100 s
2
100 ms
1s
1
DC
10
40
100
3
1 ms
10 ms
10
30
Fig.8 Capacitance Characteristics
Operation in This Area
is Limited by R DS(on)
10
20
VDS, Drain-Source Voltage [V]
0
Single Pulse
RthJC=3.9 /W
TC=25
TJ=25
℃
10
℃
℃
10
-1
10
-1
10
0
10
1
10
1
0.1
2
1
Fig.10 Unclamped Inductive Switching
Capability
Fig.9 Maximum Safe Operating Area
70
0
10
D=0.5
Zθ JC(t), Thermal Response
60
ID, Drain Current [A]
10
tAV, TIME IN AVALANCHE (ms)
VDS, Drain-Source Voltage [V]
50
40
30
20
0.2
0.1
※ Notes :
Duty Factor, D=t 1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=3.9 /W
-1
10
0.05
℃
0.02
single pulse
10
0.01
0
25
-2
50
75
100
125
10
150
-4
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t1, Rectangular Pulse Duration [sec]
℃
Fig.11 Maximum Drain Current vs. Case
Temperature
Mar 2016. Version 2.1
-3
10
TC, Case Temperature [ ]
Fig.12
Curve
4
Transient
Thermal
Response
MagnaChip Semiconductor Ltd.
Dimensions are in millimeters unless otherwise specified
Mar 2016. Version 2.1
5
MagnaChip Semiconductor Ltd.
MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
Physical Dimensions
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The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Mar 2016. Version 2.1
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MagnaChip Semiconductor Ltd.
MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
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