N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. VDS = 40V ID = 50A @VGS = 10V RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V Applications Inverters General purpose applications D G G DS S Absolute Maximum Ratings (TC =25oC unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage o TC=25 C Continuous Drain Current (Note 1) Rating Unit VDSS 40 V VGSS ±20 V (a) 50 o TC=100 C o TA=25 C (b) 31.8 ID o TA=100 C Pulsed Drain Current 8.0 IDM 100 o TC=25 C Power Dissipation for Single Operation o TA=25 C 12.8 PD o (Note 2) Junction and Storage Temperature Range W 2 TA=100 C Single Pulse Avalanche Energy A 32 o TC=100 C A 12.6 0.8 EAS 153 TJ, Tstg mJ o -55~+150 C Thermal Characteristics Characteristics Symbol Rating Thermal Resistance, Junction-to-Ambient RθJA 62.5 Thermal Resistance, Junction-to-Case RθJC 3.9 Mar 2016. Version 2.1 1 Unit o MagnaChip Semiconductor Ltd. C/W MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ MDF1752 Part Number Temp. Range MDF1752TH o -55~150 C Package Packing RoHS Status TO-220F Tube Halogen Free Electrical Characteristics (TJ =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 40 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.7 3.0 V Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - 0.1 VGS = 10V, ID = 14A - 6.1 8.0 VGS = 4.5V, ID = 11A - 8.2 10.5 VDS = 5V, ID = 14A - 58 - - 26.4 - Drain-Source ON Resistance RDS(ON) Forward Transconductance gFS μA mΩ S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs - 3.6 - Gate-Drain Charge Qgd VDS = 20V, ID = 14A, VGS = 10V - 6.8 - Input Capacitance Ciss - 1480 - Reverse Transfer Capacitance Crss - 113 - Output Capacitance Coss - 243 - Turn-On td(on) - 9 - - 21 - - 31 - - 18 - - 0.8 1.2 - 26 - ns - 11 - nC Delay Time Turn-On Rise Time tr Trun-Off Delay Time td(off) Trun-Off Fall Time VDS = 20V, VGS = 0V, f = 1.0MHz nC VGS = 10V ,VDS = 20V, ID = 1A , RGEN = 6Ω tf pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 14A, VGS = 0V IF = 14A, di/dt = 100A/μs Note : 1. PD is based on TJ(MAX)=150°C a. PD (TC=25°C) is based on RθJC, b. PD (TA=25°C) is based on RθJA 2. Starting TJ=25°C, L=1mH, IAS=17.5A, VDD=40V, VGS=10V Mar 2016. Version 2.1 2 MagnaChip Semiconductor Ltd. V MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ Ordering Information 3.0 4.0V 4.5V 2.8 VGS = 10V Normalized Drain-Source On-Resistance ID, Drain Current [A] 80 5.0V 6.0V 60 3.5V 40 20 VGS = 3V 2.6 3.5V 2.4 2.2 2.0 4.0V 1.8 1.6 5.0V 1.4 6.0V 4.5V 1.2 10V 1.0 3.0V 0.8 0 0.0 0.5 1.0 1.5 2.0 0.6 2.5 0 20 40 VDS, Drain-Source Voltage [V] 60 80 100 ID, Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 20.0 1.6 1. VGS = 10 V 2. ID = 14 A 1.4 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance ※ Notes : 1.2 1.0 0.8 17.5 15.0 TA = 125 ℃ 12.5 10.0 TA = 25 ℃ 7.5 0.6 -50 -25 0 25 50 75 100 125 5.0 150 2 4 o Fig.3 On-Resistance Variation with Temperature 8 10 Fig.4 On-Resistance Variation with Gate to Source Voltage 3 10 100 ※ Notes : ※ Notes : VDS = 5V 2 VGS = 0V IDR, Reverse Drain Current [A] 10 80 ID, Drain Current [A] 6 VGS, Gate to Source Volatge [V] TJ, Junction Temperature [ C] 60 TA=125 ℃ 40 25 ℃ -55 ℃ 20 1 10 0 10 -1 10 TA=125 ℃ 25 ℃ -2 -55 10 ℃ -3 10 -4 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 4.5 VGS, Gate-Source Voltage [V] 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Mar 2016. Version 2.1 0.2 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ 100 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 14A 1.6n 8 Ciss 10V 6 VDS = 20V Capacitance [F] VGS, Gate-Source Voltage [V] MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ 2.0n 10 30V 4 1.2n 800.0p ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 400.0p 2 Coss Crss 0.0 0 0 10 20 30 0 40 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 I(AS), AVALANCHE CURRENT (A) ID, Drain Current [A] 100 s 2 100 ms 1s 1 DC 10 40 100 3 1 ms 10 ms 10 30 Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 10 20 VDS, Drain-Source Voltage [V] 0 Single Pulse RthJC=3.9 /W TC=25 TJ=25 ℃ 10 ℃ ℃ 10 -1 10 -1 10 0 10 1 10 1 0.1 2 1 Fig.10 Unclamped Inductive Switching Capability Fig.9 Maximum Safe Operating Area 70 0 10 D=0.5 Zθ JC(t), Thermal Response 60 ID, Drain Current [A] 10 tAV, TIME IN AVALANCHE (ms) VDS, Drain-Source Voltage [V] 50 40 30 20 0.2 0.1 ※ Notes : Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=3.9 /W -1 10 0.05 ℃ 0.02 single pulse 10 0.01 0 25 -2 50 75 100 125 10 150 -4 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] ℃ Fig.11 Maximum Drain Current vs. Case Temperature Mar 2016. Version 2.1 -3 10 TC, Case Temperature [ ] Fig.12 Curve 4 Transient Thermal Response MagnaChip Semiconductor Ltd. Dimensions are in millimeters unless otherwise specified Mar 2016. Version 2.1 5 MagnaChip Semiconductor Ltd. MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ Physical Dimensions U.S.A Sunnyvale Office 787 N. 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MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Mar 2016. Version 2.1 6 MagnaChip Semiconductor Ltd. MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ Worldwide Sales Support Locations