AOSMD AOK20B65M1 Very fast and soft recovery freewheeling diode Datasheet

AOK20B65M1/AOT20B65M1/AOB20B65M1
TM
650V, 20A Alpha IGBT
With soft and fast recovery anti-parallel diode
General Description
Product Summary
• Latest Alpha IGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(sat) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
VCE
IC (TC=100°C)
650V
20A
VCE(sat) (TJ=25°C)
1.7V
Applications
• Motor Drives
• Sewing Machines
• Home Appliances
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
TO-247
TO-263
D2PAK
TO-220
C
C
AOK20B65M1
G
C
G
E
Orderable Part Number
C
E
E
G
G
E
AOT20B65M1
Package Type
AOB20B65M1
Form
Minimum Order Quantity
AOK20B65M1
TO247
Tube
240
TO220
Tube
1000
AOT20B65M1
AOB20B65M1
TO263
Tape & Reel
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
AOK20B65M1/AOT(B)20B65M1
Parameter
Collector-Emitter Voltage
V CE
650
Gate-Emitter Voltage
V GE
Continuous Collector TC=25°C
TC=100°C
Current
Pulsed Collector Current, Limited by TJmax
Turn off SOA, VCE≤650V, Limited by TJmax
Continuous Diode
Forward Current
TC=25°C
TC=100°C
IC
±30
40
20
Units
V
V
A
I CM
60
A
I LM
60
A
IF
40
20
A
Diode Pulsed Current, Limited by TJmax
I FM
60
A
Short circuit withstanding time 1)
VGE=15V, VCC≤400V, TJ≤175°C
t SC
5
µs
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
PD
T J , T STG
227
114
-55 to 175
Maximum lead temperature for soldering
TL
300
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
AOK20B65M1
AOT(B)20B65M1
R θ JA
Maximum Junction-to-Ambient
40
65
R θ JC
Maximum IGBT Junction-to-Case
0.66
Maximum Diode Junction-to-Case
R θ JC
1.5
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Rev.3.0: May 2016
www.aosmd.com
W
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 9
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
IC=1mA, VGE=0V, TJ=25°C
650
-
-
V
V CE(sat)
VGE=15V, IC=20A
Symbol
VF
Collector-Emitter Saturation Voltage
VGE=0V, IF=20A
Diode Forward Voltage
V GE(th)
Gate-Emitter Threshold Voltage
VCE=5V, IC=1mA
I CES
Zero Gate Voltage Collector Current
VCE=650V, VGE=0V
TJ=25°C
-
1.7
2.15
TJ=125°C
-
2.02
-
TJ=175°C
-
2.2
-
V
TJ=25°C
-
1.66
2.1
TJ=125°C
-
1.67
-
TJ=175°C
-
1.62
-
-
5.1
-
V
V
TJ=25°C
-
-
10
TJ=125°C
-
-
500
TJ=175°C
-
-
5000
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±30V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=20A
-
14
-
S
-
1212
-
pF
-
141
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCC=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
50
-
pF
Qg
Total Gate Charge
-
46
-
nC
Q ge
Gate to Emitter Charge
-
12
-
nC
Q gc
Gate to Collector Charge
-
21
-
nC
-
115
-
A
VGE=0V, VCC=0V, f=1MHz
Rg
Gate resistance
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
-
13
-
Ω
ns
I C(SC)
VGE=15V, VCC=520V, IC=20A
VGE=15V, VCC=400V,
tsc≤5us, TJ≤175°C
Short circuit collector current
t D(on)
Turn-On DelayTime
-
26
-
tr
Turn-On Rise Time
-
25
-
ns
t D(off)
Turn-Off Delay Time
-
122
-
ns
tf
Turn-Off Fall Time
-
13
-
ns
E on
Turn-On Energy
-
0.47
-
mJ
E off
Turn-Off Energy
-
0.27
-
mJ
E total
t rr
Total Switching Energy
-
0.74
-
mJ
Diode Reverse Recovery Time
-
322
-
Q rr
Diode Reverse Recovery Charge
TJ=25°C
VGE=15V, VCC=400V, IC=20A,
RG=15Ω
-
0.8
-
ns
µC
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
-
5.2
-
A
t D(on)
Turn-On DelayTime
-
27
-
ns
tr
Turn-On Rise Time
-
24
-
ns
t D(off)
Turn-Off Delay Time
-
150
-
ns
tf
Turn-Off Fall Time
-
28
-
ns
E on
Turn-On Energy
-
0.52
-
mJ
E off
Turn-Off Energy
-
0.49
-
mJ
E total
t rr
Total Switching Energy
-
1.01
-
mJ
Diode Reverse Recovery Time
-
494
-
Q rr
Diode Reverse Recovery Charge
-
1.6
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
7.1
-
A
TJ=25°C
IF=20A, di/dt=200A/µs, VCC=400V
I rm
TJ=175°C
VGE=15V, VCC=400V, IC=20A,
RG=15Ω
TJ=175°C
IF=20A, di/dt=200A/µs, VCC=400V
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: May 2016
www.aosmd.com
Page 2 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
75
20V
17V
20V
75
60
15V
13V
60
13V
45
11V
45
IC (A)
IC (A)
17V
15V
11V
30
9V
30
9V
15
15
VGE= 7V
VGE=7V
0
0
0
1
2
3
4
5
6
0
7
1
2
3
5
6
7
60
50
VCE=20V
50
40
-40°C
25°C
40
30
175°C
IF (A)
IC (A)
4
VCE (V)
Figure 2: Output Characteristic
(Tj=175°C)
VCE (V)
Figure 1: Output Characteristic
(Tj=25°C)
30
20
175°C
20
25°C
10
-40°C
10
0
0
3
6
9
12
VGE (V)
Figure 3: Transfer Characteristic
15
0
0.5
1
1.5
2
2.5
3
VF (V)
Figure 4: Diode Characteristic
5
3
2.5
4
40A
IC=40A
VF (V)
VCE(sat) (V)
2
3
IC=20A
20A
1.5
5A
2
1
1
IC=10A
IF=1A
0.5
0
0
0
25
75
100
125
150
175
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.3.0: May 2016
50
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0
25
50
75
100
125
150
175
Temperature (°C)
Figure 6: Diode Forward voltage vs. Junction
Temperature
Page 3 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=520V
IC=20A
Cies
12
Capacitance (pF)
VGE (V)
1000
9
6
Coes
100
Cres
10
3
0
1
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
8
16
24
32
VCE (V)
Figure 8: Capacitance Characteristic
40
25
50
175
300
Power Disspation (W)
240
180
120
60
0
75
100
125
150
TCASE (°C)
Figure 10: Power Disspation as a Function of Case
1E-02
50
1E-03
1E-04
30
ICE(S) (A)
Current rating IC (A)
40
20
VCE=650V
1E-05
1E-06
10
VCE=520V
1E-07
0
1E-08
25
50
75
100
125
150
175
TCASE (°C)
Figure 11: Current De-rating
Rev.3.0: May 2016
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
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Page 4 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
100
10
100
10
1
1
10
15
20
25
30
35
IC (A)
Figure 13: Switching Time vs. IC
(Tj=175°C, VGE=15V, VCE=400V, Rg=15Ω)
10000
40
0
1000
30
60
90
120
Rg (Ω)
Figure 14: Switching Time vs. Rg
(Tj=175°C, VGE=15V, VCE=400V, IC=20A)
150
25
175
7
Td(off)
Tf
Td(on)
Tr
6
5
VGE(TH) (V)
Switching Time (ns)
Td(off)
Tf
Td(on)
Tr
1000
Switching Time (ns)
1000
Switching Time (ns)
10000
Td(off)
Tf
Td(on)
Tr
100
4
3
10
2
1
1
25
Rev.3.0: May 2016
50
75
100
125
150
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V, VCE=400V, IC=20A, Rg=15Ω)
175
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0
50
75
100
125
150
TJ (°C)
Figure 16: VGE(TH) vs. Tj
Page 5 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
3
Eoff
Eoff
Eon
Eon
2.5
Etotal
Switching Energy (mJ)
SwitchIng Energy (mJ)
2.5
2
1.5
1
0.5
Etotal
2
1.5
1
0.5
0
0
10
15
20
25
30
35
40
0
1.5
60
90
120
150
1.5
Eoff
Eoff
Eon
Eon
1.2
1.2
Etotal
Switching Energy (mJ)
Switching Energy (mJ)
30
Rg (Ω)
Figure 18: Switching Loss vs. Rg
(Tj=175°C, VGE=15V, VCE=400V, IC=20A)
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=175°C, VGE=15V, VCE=400V, Rg=15Ω)
0.9
0.6
0.3
Etotal
0.9
0.6
0.3
0
0
25
Rev.3.0: May 2016
50
75
100
125
150
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V, VCE=400V, IC=20A, Rg=15Ω)
175
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200
250
300
350
400
450
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=175°C, VGE=15V, IC=20A, Rg=15Ω)
500
Page 6 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
32
480
24
360
25°C
15
240
16
0
0
0
30
35
0
10
40
IF (A)
Figure 21: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
2000
175°C
1600
5
25°C
Irm
25°C
25
S
120
8
20
10
175°C
500
15
20
25°C
Trr
175°C
10
25
175°C
40
600
32
480
15
20
25
30
35
40
IF (A)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
30
25
24
25°C
Qrr
800
16
Trr (ns)
1200
Irm (A)
Qrr (nC)
175°C
15
25°C
240
10
175°C
175°C
Irm
400
8
120
5
25°C
25°C
0
0
200
300
S
0
500
600
700
800
di/dt (A/µs)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
(VGE=15V, VCE=400V, IF=20A)
Rev.3.0: May 2016
20
Trr
360
S
Qrr
1000
30
S
175°C
600
Irm (A)
Qrr (nC)
2000
40
Trr (ns)
2500
400
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0
200
300
400
500
600
700
800
di/dt (A/µs)
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V, VCE=400V, IF=20A)
Page 7 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.66°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
Single Pulse
0.01
Ton
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
1
10
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PDM
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.3.0: May 2016
www.aosmd.com
Page 8 of 9
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.3.0: May 2016
www.aosmd.com
Page 9 of 9
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