NVATS5A108PLZ Power MOSFET 40 V, 10.4 mΩ, 77 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features Low On-Resistance High Current Capability 100% Avalanche Tested AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252﴿ Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 10.4 mΩ @ 10 V 40 V 16.5 mΩ @ 4.5 V 2,4 1 1 : Gate 2 : Drain 3 : Source 4 : Drain SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Symbol VDSS VGSS ID 40 20 77 Unit V V A IDP 231 A PD 72 W 55 to +175 C 95 35 mJ A Operating Junction and Storage Temperature Tj, Tstg Avalanche Energy (Single Pulse) (Note 2) Avalanche Current (Note 3) EAS IAV Value Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD = 15 V, L = 100 H, IAV = 35 A 3 : L ≤ 100 H, Single pulse THERMAL RESISTANCE RATINGS Parameter 77 A ELECTRICAL CONNECTION P-Channel Typical Applications Reverse Battery Protection Load Switch Automotive Front Lighting Automotive Body Controllers Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW 10 s, duty cycle 1% Power Dissipation Tc = 25C ID Max Symbol Junction to Case Steady State (Tc = 25C) RJC Junction to Ambient (Note 4) RJA Value 3 4 1 2 3 ATPAK MARKING ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Unit 2.0 C/W 79.6 C/W 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad. © Semiconductor Components Industries, LLC, 2016 September 2016 - Rev. 0 1 Publication Order Number : NVATS5A108PLZ/D NVATS5A108PLZ ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5) Conditions Value Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS ID = 1 mA, VGS = 0 V Zero-Gate Voltage Drain Current VDS = 40 V, VGS = 0 V 1 A Gate to Source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 2.6 V Forward Transconductance gFS VDS = 10 V, ID = 35 A 65 Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID = 35 A, VGS = 10 V 8 10.4 m 11.5 16.5 m Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time tr Turn-OFF Delay Time td(off) ID = 18 A, VGS = 4.5 V min typ max 40 Unit V 1.2 S 3,850 pF 560 pF Crss 390 pF td(on) 19 ns 340 ns 340 ns VDS = 20 V, f = 1 MHz See Fig.1 Fall Time tf 290 ns Total Gate Charge Qg 79.5 nC Gate to Source Charge Qgs 20 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS = 20 V, VGS = 10 V, ID = 70 A 15 IS = 70 A, VGS = 0 V 1.05 nC 1.5 V Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2 NVATS5A108PLZ www.onsemi.com 3 NVATS5A108PLZ www.onsemi.com 4 NVATS5A108PLZ PACKAGE DIMENSIONS unit : mm DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O 4 2 3 RECOMMENDED SOLDERING FOOTPRINT 6.5 1 : Gate 2 : Drain 1.5 2 4 : Drain 6.7 3 : Source 1.6 1 2.3 www.onsemi.com 5 2.3 NVATS5A108PLZ ORDERING INFORMATION Device NVATS5A108PLZT4G Marking Package Shipping (Qty / Packing) ATP108 DPAK(Single Gauge) / ATPAK (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVATS5A108PLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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