NJ2N65 POWER MOSFET 2.0A 650V N-CHANNEL POWER MOSFET DESCRIPTION The NJ2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-220 1 FEATURES TO-220F * RDS(ON) = 5 @VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 TO-251 SYMBOL 1 TO-252 ORDERING INFORMATION Ordering Number Package NJ2N65-LI NJ2N65-BL NJ2N65F-LI NJ2N65A-LI NJ2N65D-TR NJ2N65D-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F TO-251 TO-252 TO-252 D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tape Box Bulk Tube Tube Tape Ree Tube NJ2N65 POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°ɋ, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed (Note 2) Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-220 TO-220F Power Dissipation TO-251 TO-252 SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt PD RATINGS 650 ±30 2.0 2.0 8.0 140 4.5 4.5 40 21 UNIT V V A A A mJ mJ V/ns W W 28 W Junction Temperature TJ +150 °ɋ Operating Temperature TOPR -55 ~ +150 °ɋ Storage Temperature TSTG -55 ~ +150 °ɋ Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 ȍ, Starting TJ = 25°C 4. ISD2.4A, di/dt200A/ȝs, VDD BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient SYMBOL TO-220 TO-220F TO-251 TO-252 șJA TO-220 TO-220F Junction to Case TO-251 TO-252 șJc RATINGS 62.5 125 UNIT °ɋ/W °ɋ/W 110 °ɋ/W 3.13 5.95 °ɋ/W °ɋ/W 4.53 °ɋ/W NJ2N65 POWER MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°ɋ, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT VGS = 0V, ID = 250ȝA 650 V VDS = 650V, VGS = 0V 10 ȝA VGS = 30V, VDS = 0V 100 nA Forward Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient ːBVDSS/ːTJ ID=250ȝA, Referenced to 25°C 0.4 V/°ɋ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250ȝA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 3.9 5.0 ȍ DYNAMIC CHARACTERISTICS 270 350 pF Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS 40 50 pF f =1MHz Reverse Transfer Capacitance CRSS 5 7 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) 10 30 ns Turn-On Rise Time tR 25 60 ns VDD =325V, ID =2.4A, RG=25ȍ (Note 1, 2) Turn-Off Delay Time tD(OFF) 20 50 ns Turn-Off Fall Time tF 25 60 ns 9.0 11 nC Total Gate Charge QG VDS=520V, VGS=10V, Gate-Source Charge QGS 1.6 nC ID=2.4A (Note 1, 2) Gate-Drain Charge QGD 4.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A 180 ns Reverse Recovery Time trr VGS = 0 V, ISD = 2.4A, di/dt = 100 A/ȝs (Note1) Reverse Recovery Charge QRR 0.72 ȝC Notes: 1. Pulse Test: Pulse width 300ȝs, Duty cycle2% 2. Essentially independent of operating temperature NJ2N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ2N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms ġġġġġġġġġġġġġ NJ2N65 POWER MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage 300 200 150 100 250 Drain Current, ID (μA) 250 200 150 100 50 50 0 0 0 300 0 150 450 600 750 Drain-Source Breakdown Voltage, BVDSS (V) 0.6 1.2 1.8 2.4 3.0 3.6 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Drain Current, ID (μA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (A)