® MBR4035PTR thru MBR40200PTR Pb MBR4035PTR thru MBR40200PTR Pb Free Plating Product 40.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers Features Standard MBR matured technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High surge current capability TO-3PN/TO-3PB Bottom Side Metal Heat Sink Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sound Device Systems Mechanical Data Case: Heatsink TO-3PN/TO-3PB Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.1 gram approximately Case Case Case Case Series Doubler Negative Positive Common Cathode Common Anode Tandem Polarity Tandem Polarity Suffix "PTS" Suffix "PTR" Suffix "PTD" Suffix "PT" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR MBR MBR MBR 4035 4045 4050 4060 4090 PTR PTR PTR PTR PTR PTR PTR PTR 40100 40150 40200 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 200 Maximum RMS voltage VRMS 24 31 35 42 63 70 105 140 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 200 V Maximum average forward rectified current IF(AV) 40 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 40 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM Peak repetitive reverse surge Current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=20A, TJ=25℃ IF=20A, TJ=125℃ IF=40A, TJ=25℃ IF=40A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ VF 330 A 0.75 0.77 0.84 0.90 0.65 0.67 0.74 0.80 0.80 - - 1.01 0.75 IR A 1 2 1.0 30 20 V - - 0.5 0.1 10 V mA Voltage rate of change (Rated VR) dV/dt 10,000 Typical thermal resistance RθJC 1.2 TJ - 55 to + 150 ℃/W ℃ TSTG - 55 to + 150 ℃ Operating junction temperature range Storage temperature range V/μs Note 1: 2.0μs Pulse Width, f=1.0KHz Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle Rev.07C © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ ® MBR4035PTR thru MBR40200PTR RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 50 600 40 8.3ms Single Half Sine Wave JEDEC Method 500 400 30 300 20 200 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 10 100 0 0 50 100 0 150 1 10 TJ=125℃ TJ=25℃ Pulse Width=300μs 1% Duty Cycle 1 MBR40150PTR-MBR40200PTR 0.1 MBR4035PTR-MBR4045PTR MBR4050PTR-MBR4060PTR MBR4090PTR-MBR40100PTR 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FIG.4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) FIG. 3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 100 10 10 TJ=125℃ 1 TJ=75℃ 0.1 TJ=25℃ 0.01 MBR4035PTR-MBR4045PTR MBR4050PTR-MBR40200PTR 0.001 0 1.1 1.2 FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG 40 60 80 100 120 140 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 10000 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) MBR4035PTR-MBR4045PTR MBR4035PTR-MBR4060PTR MBR4090PTR-MBR40200PTR 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (oC) 10 1000 1 0.1 100 0.1 1 10 REVERSE VOLTAGE (V) Rev.07C © 2006 Thinki Semiconductor Co., Ltd. 100 0.01 0.1 1 10 100 T-PULSE DURATION (sec) Page 2/2 http://www.thinkisemi.com/