Radiation Hardened Quad Voltage Comparator HS-139RH, HS-139EH Features The Radiation Hardened HS-139RH, HS-139EH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single supply and the low supply current makes these comparators suitable for low power applications. These types were designed to directly interface with TTL and CMOS. • QML Qualified Per MIL-PRF-38535 Requirements The HS-139RH, HS-139EH is fabricated on our dielectrically isolated Rad Hard Silicon Gate (RSG) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. • 100V Output Voltage Withstand Capability Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed below must be used when ordering. • Input Offset Voltage (VIO) . . . . . . . . . . . . . . . . . . . . 2mV (Max) Detailed Electrical Specifications for the HS-139RH, HS-139EH are contained in SMD 5962-98613. A “hot-link” is provided on our homepage with instructions for downloading. www.intersil.com/spacedefense/newsafclasst.asp Applications • Radiation Environment - Latch-up Free Under any Conditions - Total Dose (Max). . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU LET Threshold . . . . . . . . . . . . . . . . . . . 20MeV/cm2/mg - Low Dose Rate Effects Immunity • ESD Protection to >3000V • Differential Input Voltage Range Equal to the Supply Voltage • Quiescent Supply Current . . . . . . . . . . . . . . . . . . . . 2mA (Max) • Pb-Free (RoHS Compliant) • Pulse Generators • Timing Circuitry • Level Shifting • Analog-to-Digital Conversion Ordering Information ORDERING NUMBER (Note) INTERNAL MKT. NUMBER PART MARKING TEMP. RANGE (°C) PACKAGE (RoHS Compliant) PACKAGE DRAWING NUMBER 5962F9861303VCC HS1-139EH-Q Q 5962F98 61303VCC -55 to +125 14 Ld SBDIP D14.3 5962F9861301VCC HS1-139RH-Q Q 5962F98 61301VCC -55 to +125 14 Ld SBDIP D14.3 5962F9861301QCC HS1-139RH-8 Q 5962F98 61301QCC -55 to +125 14 Ld SBDIP D14.3 HS1-139RH/PROTO HS1-139RH/PROTO HS1-139RH/PROTO -55 to +125 14 Ld SBDIP D14.3 5962F9861301VXC HS9-139RH-Q Q 5962F98 61301VXC -55 to +125 14 Ld FLATPACK K14.A 5962F9861301QXC HS9-139RH-8 Q 5962F98 61301QXC -55 to +125 14 Ld FLATPACK K14.A 5962F9861302VXC HS9-139EH-Q Q 5962F98 61302VXC -55 to +125 14 Ld FLATPACK K14.A HS9-139RH/PROTO HS9-139RH/PROTO HS9-139RH /PROTO -55 to +125 14 Ld FLATPACK K14.A NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. July 12, 2012 FN3573.5 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 1999, 2004, 2008, 2009, 2012. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. HS-139RH, HS-139EH Pin Configurations HS-139RH, HS-139EH (SBDIP CDIP2-T14) TOP VIEW s OUT 2 1 14 OUT 3 OUT 1 2 13 OUT 4 V+ 3 HS-139RH, HS-139EH (FLATPACK CDFP3-F14) TOP VIEW OUT 2 1 14 OUT 3 OUT 1 2 13 OUT 4 V+ 3 12 GND - IN 1 4 11 + IN 4 12 GND - IN 1 4 11 + IN 4 + IN 1 5 10 - IN 4 + IN 1 5 10 - IN 4 - IN 2 6 9 + IN 3 - IN 2 6 9 + IN 3 +IN 2 7 8 - IN 3 + IN 2 7 8 - IN 3 Die Characteristics DIE DIMENSIONS: Backside Finish: 3750µm x 2820µm (148 mils x 111 mils) 483µm ±25.4µm (19 mils ±1 mil) INTERFACE MATERIALS: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Glassivation: Unbiased (DI) Type: Silox (SiO2) Thickness: 8.0kÅ ±1.0kÅ ADDITIONAL INFORMATION: Worst Case Current Density: Top Metallization: <2.0 x 105 A/cm2 Type: AlSiCu Thickness: 16.0kÅ ±2kÅ Transistor Count: 49 Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation 2 FN3573.5 July 12, 2012 HS-139RH, HS-139EH Metallization Mask Layout HS-139RH, HS-139EH GND (12) +IN4 (11) -IN4 (10) OUT4 (13) +IN3 (9) OUT3 (14) -IN3 (8) +IN2 (7) OUT2 (1) -IN2 (6) OUT1 (2) V+ (3) -IN1 (4) +IN1 (5) TABLE 1. HS-139RH, HS-139EH PAD COORDINATES RELATIVE TO PIN 1 PIN NUMBER PAD NAME X COORDINATES Y COORDINATES 1 OUT 2 0 0 2 OUT 1 0 -535 3 V+ 1323 -688 4 -IN 1 1862 -670 5 +IN 1 2439 -670 6 -IN 2 3084 -299 7 +IN 2 3084 278 8 -IN 3 3084 518 9 +IN 3 3084 1095 10 -IN 4 2439 1466 11 +IN 4 1862 1466 12 GND 1550 1503 13 OUT 4 0 1331 14 OUT 3 0 796 NOTE: Dimensions in microns For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 3 FN3573.5 July 12, 2012