Transistors SMD Type NPN Transistors MMBT4401 (KMBT4401) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 0.55 ● Complementary PNP Type Available (MMBT4403) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● Ideal for Medium Power Amplification and Switching 2 +0.02 0.15 -0.02 1.1 +0.2 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter +0.1 0.68 -0.1 2. Emitter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6.0 V Collector current IC 600 mA Total Device Dissipation Alumina Substrate PD 300 mW Thermal Resistance, Junction to Ambient RθJA 417 ℃/W TJ, Tstg -55 to150 ℃ Junction and Storage Temperature 3. Collector ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE = 0 Collector-emitter breakdown voltage Emitter-base breakdown voltage Min Typ Max Unit 60 V V(BR)CEO IC = 1.0 mA, IB = 0 40 V V(BR)EBO IE =100μA, IC = 0 6.0 V Collector cut-off current ICBO VCB=50 V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V DC current gain * Collector-emitter saturation voltage * VCE(sat) Base-emitter saturation voltage * VBE(sat) 20 40 80 100 40 300 IC = 150 mA, IB = 15 mA 0.4 IC = 500 mA, IB = 50 mA 0.75 IC = 150 mA, IB = 15 mA 0.75 IC = 500 mA, IB = 50 mA 0.95 1.2 250 V V Transition frequency fT IC = 20 mA, VCE = 10 V, f = 100 MHz Delay time td VCC = 30 V, VEB = 2.0 V, 15 MHz ns Rise time tr IC = 150 mA, IB1 = 15 mA 20 ns Storage time ts VCC = 30 V, IC = 150 mA, 225 ns Fall time tf IB1 = IB2 = 15 mA 30 ns * Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. ■ Marking Marking 2X www.kexin.com.cn 1 Transistors SMD Type NPN Transistors MMBT4401 (KMBT4401) ■ Typical Characterisitics Static Characteristic 250 Ta=100℃ 0.9mA COLLECTOR CURRENT DC CURRENT GAIN IC 0.8mA 0.7mA 0.6mA 0.5mA 100 0.4mA 0.3mA 50 IC COMMON EMITTER VCE= 1V 1mA 150 —— hFE (mA) 200 hFE 1000 COMMON EMITTER Ta =25℃ Ta=25℃ 100 0.2mA IB=0.1mA 0 0 1 2 3 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 10 4 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— IC 600 100 (mA) IC β=10 β=10 Ta=25℃ 600 Ta =100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC 600 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.5 0.1 600 1 10 COLLECTOR CURREMT (mA) VBE fT 500 (mA) IC Ta=25℃ TRANSITION FREQUENCY 10 Ta =2 5℃ Ta =1 00℃ COLLECTOR CURRENT IC fT 100 —— 600 100 IC COMMON EMITTER VCE=10V (MHz) COMMON EMITTER VCE=1V (mA) 10 COLLECTOR CURRENT VCE (V) 1 0.1 0 200 400 600 800 1000 100 10 1200 10 BASE-EMMITER VOLTAGE VBE (mV) 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ CAPACITANCE C (pF) Cib 10 Cob 2 www.kexin.com.cn 10 V (V) 30 —— IC 30 40 (mA) Ta 300 200 100 0 1 REVERSE VOLTAGE PC 400 f=1MHz IE=0/IC=0 1 0.1 20 COLLECTOR CURRENT 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150