High Power Button Capsule Thyristor Type Number DCR1003SN1818 DCR1003SN1717 DCR1003SN1616 DCR1003SN1515 DCR1003SN1414 DCR1003SN1313 DCR1003SN1212 DCR1003SN1111 DCR1003SN1010 DCR1003SN0909 DCR1003SN0808 DCR1003SN0707 DCR1003SN0606 DCR1003SN0505 DCR1003SN0404 DCR1003SN0303 DCR1003SN0202 DCR1003SN0101 DCR1004SN1818 DCR1004SN1717 DCR1004SN1616 DCR1004SN1515 DCR1004SN1414 DCR1004SN1313 DCR1004SN1212 DCR1004SN1111 DCR1004SN1010 DCR1004SN0909 DCR1004SN0808 DCR1004SN0707 DCR1004SN0606 DCR1004SN0505 DCR1004SN0404 DCR1004SN0303 DCR1004SN0202 DCR1004SN0101 Non-Repetitive Peak Voltages VDSM VRSM 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 Repetitive Peak Voltages VDRM VRRM 1700. 1600. 1500. 1400. 1300. 1200. 1100. 1000. 900. 800. 700. 600. 500. 400. 300. 200. 150. 75. OUTLINE N CURRENT RATINGS― DOUBLE SIDE COOLED IT(AV) Mean on-state current IRMS RMS value IT Continuous (direct) on-state current R(th(J-h) Thermal resistance junction to heatsink surface Half wave resistive load THS = 55oC THS = 55oC THS = 55oC Clamping force 19.5kN (with mounting grease) CURRENT RATINGS―SINGLE SIDE COOLED IT(AV) Mean on-state current IRMS RMS value IT Continuous (direct) on-state current R(th(J-h) Thermal resistance junction to heatsink surface Half wave resistive load THS = 55oC THS = 55oC THS = 55oC Clamping force 19.5kN (with mounting grease) SURGE RATINGS ITRM Repetitive peak on-state current 2 2 It I t for fusing ITSM dlT/dt Surge (non-repetitive) on-state current Rate of rise of on-state current dv/dt* Max linear rate of rise of off-state voltage *Higher values available. GATE RATINGS VFGM Peak forward gate voltage VFGN Peak forward gate voltage VRGM Peak reverse gate voltage IFGM Peak forward gate current PGM Peak gate power PG Mean gate power TEMPERATURE & FREQUENCY RATINGS TVJ Virtual junction temperature Tstg F d.c. Half-wave 3-phase 1540 A 2420 A 2050 A .026OC/W .028OC/W .030OC/W d.c. Half-wave 3-phase 870 A 1365 A 1060 A .06oC/W .062oC/W .064oC/W Sinusoidal waveform conduction angle ɬ = 30o THS = 55oC 10mS half sine TJ = 125oC 3mS half sine TJ = 125oC With 50% VRSM TJ = 125oC From VD to 1000A, Gate source 10V 5Ω rise time 0.5µs, TJ = 125oC Voltage = 67%VDRM, Tcase = 125oC 14920 A Anode positive with respect to cathode Anode negative with respect to cathode 30 V 0.25 V 5V 10 A 150 W 10 W 2205000 A2sec 1540000 A2sec 21000 A 100A/µs 300 V/ µs Anode positive with respect to cathode Pulse width = 100µ On-state (conduction) Off-state (blocking) Storage temperature range Frequency range -55 to 10 to 135OC 125OC 125 OC 400 Hz Document Page 1 of 4 Revised 05/2016 Tel. 1-973-377-9566 Fax. 1-973-377-3078 133 Kings Road Madison, New Jersey 07940 United States of America © 2016 American Microsemiconductor, Inc. Specifications are subject to change without notice DCR1003 Series DCR1004 Series IT(AV) = 1540A VRRM = 1700V www.americanmicrosemi.com DEKRA Certification Inc. AS9100C and ISO 9001:2008 Certificate No. 131519.01 DCR1003 Series DCR1004 Series IT(AV) = 1540 A VRRM = 1700 V o CHARACTERISTICS― Tcase = 25 C unless otherwise stated LIMIT 5% VTM On-state voltage Max Units DCR 1003 1.5 V DCR1004 1.625 V o 50 mA o 50 mA At 2900A peak Typ IDM Peak off-state current Tcase = 125 C IRM Peak reverse current Tcase = 125 C IL Latching current VD = 5V Tp = 30µS 120 IH Holding current VD = 5V Gate open circuit 77 td Delay time VD = 100V, Gate source = 25V 5Ω tq Circuit commutated IT = 800A, VRRM = 50V, dlRR/dt = 20A/µS Turn-off time VDR = full rated VD, 95% mA mA 0.58 0.8 1.52 µs 90 215 380 µs o dVDR/dt = 20V/µs Iinear , Tcase = 125 C VGT Gate trigger voltage VDRM = 5V 3.5 VGD Gate non-trigger voltage At VDRM, Tcase = 5V 0.25 V IGT Gate trigger current VDWM = 5V 200 mA Document Page 2 of 4 Revised 05/2016 Tel. 1-973-377-9566 Fax. 1-973-377-3078 133 Kings Road Madison, New Jersey 07940 United States of America © 2016 American Microsemiconductor, Inc. Specifications are subject to change without notice V www.americanmicrosemi.com DEKRA Certification Inc. AS9100C and ISO 9001:2008 Certificate No. 131519.01 DCR1003 Series DCR1004 Series IT(AV) = 1540 A VRRM = 1700 V T-25-21 Document Page 3 of 4 Revised 05/2016 Tel. 1-973-377-9566 Fax. 1-973-377-3078 133 Kings Road Madison, New Jersey 07940 United States of America © 2016 American Microsemiconductor, Inc. Specifications are subject to change without notice www.americanmicrosemi.com DEKRA Certification Inc. AS9100C and ISO 9001:2008 Certificate No. 131519.01 DCR1003 Series DCR1004 Series IT(AV) = 1540 A VRRM = 1700 V Document Page 4 of 4 Revised 05/2016 Tel. 1-973-377-9566 Fax. 1-973-377-3078 133 Kings Road Madison, New Jersey 07940 United States of America © 2016 American Microsemiconductor, Inc. Specifications are subject to change without notice www.americanmicrosemi.com DEKRA Certification Inc. AS9100C and ISO 9001:2008 Certificate No. 131519.01