ON BC846BWT1G General purpose transistor Datasheet

BC846, BC847, BC848
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
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COLLECTOR
3
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Value
Unit
VCEO
V
65
45
30
BC846
BC847
BC848
3
1
SC−70/SOT−323
CASE 419
STYLE 3
2
Collector-Base Voltage
VCBO
80
50
30
BC846
BC847
BC848
Emitter-Base Voltage
V
MARKING DIAGRAM
VEBO
6.0
6.0
5.0
BC846
BC847
BC848
Collector Current − Continuous
V
IC
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
200
mW
RqJA
620
°C/W
TJ, Tstg
−55 to
+150
°C
XX MG
G
XX
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 12 of this data sheet.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 12
1
Publication Order Number:
BC846AWT1/D
BC846, BC847, BC848
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CEO
65
45
30
−
−
−
−
−
−
V
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846 Series
BC847 Series
BC848 Series
V(BR)CES
80
50
30
−
−
−
−
−
−
V
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CBO
80
50
30
−
−
−
−
−
−
V
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)EBO
6.0
6.0
5.0
−
−
−
−
−
−
V
ICBO
−
−
−
−
15
5.0
nA
mA
hFE
−
−
−
90
150
270
−
−
−
−
110
200
420
180
290
520
220
450
800
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
fT
100
−
−
MHz
Cobo
−
−
4.5
pF
NF
−
−
10
dB
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
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2
BC846, BC847, BC848
BC846A, BC847A, BC848A
300
300
VCE = 1 V
200
25°C
−55°C
100
VCE = 5 V
150°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
150°C
0
200
25°C
100 −55°C
0
0.001
0.01
0.1
1
0.001
0.01
1
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. DC Current Gain vs. Collector
Current
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.18
0.16
IC/IB = 20
150°C
0.14
0.12
25°C
0.10
0.08
0.06
−55°C
0.04
0.02
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
0.9
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
−55°C
IC/IB = 20
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
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3
0.1
BC846, BC847, BC848
BC846A, BC847A, BC848A
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 7. Base−Emitter Temperature Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 6. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 8. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 9. Current−Gain − Bandwidth Product
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4
50
BC846, BC847, BC848
BC846B
600
VCE = 1 V
150°C
500
400
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
600
25°C
300
−55°C
200
100
0
VCE = 5 V
150°C
500
400
25°C
300
200 −55°C
100
0
0.001
0.01
0.1
1
0.001
0.01
1
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. DC Current Gain vs. Collector
Current
Figure 11. DC Current Gain vs. Collector
Current
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.30
IC/IB = 20
150°C
0.25
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
Figure 14. Base Emitter Voltage vs. Collector
Current
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5
0.1
BC846, BC847, BC848
2.0
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
BC846B
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
1.4
1.8
qVB for VBE
2.6
3.0
20
0.2
Figure 15. Collector Saturation Region
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
2.0
Cob
0.1
0.2
1.0 2.0
10 20
0.5
5.0
VR, REVERSE VOLTAGE (VOLTS)
50
0.5
10 20
50
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
100
200
Figure 16. Base−Emitter Temperature Coefficient
40
4.0
-55°C to 125°C
2.2
VCE = 5 V
TA = 25°C
500
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
100
Figure 17. Capacitance
Figure 18. Current−Gain − Bandwidth Product
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6
BC846, BC847, BC848
BC847B, BC848B
600
VCE = 1 V
150°C
500
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
600
400
25°C
300
−55°C
200
100
0
VCE = 5 V
150°C
500
400
25°C
300
200 −55°C
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 19. DC Current Gain vs. Collector
Current
Figure 20. DC Current Gain vs. Collector
Current
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.30
IC/IB = 20
0.25
150°C
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
1.1
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 22. Base Emitter Saturation Voltage vs.
Collector Current
Figure 23. Base Emitter Voltage vs. Collector
Current
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7
0.1
BC846, BC847, BC848
BC847B, BC848B
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 25. Base−Emitter Temperature
Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 24. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 26. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 27. Current−Gain − Bandwidth Product
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8
50
BC846, BC847, BC848
BC847C, BC848C
1000
1000
150°C
VCE = 1 V
700
25°C
600
VCE = 5 V
900 150°C
800
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
900
500
400 −55°C
300
200
100
800
700
600
25°C
500
400
−55°C
300
200
100
0
0
0.001
0.01
1
0.1
0.001
0.01
1
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 28. DC Current Gain vs. Collector
Current
Figure 29. DC Current Gain vs. Collector
Current
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.30
IC/IB = 20
0.25
150°C
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 30. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
1.1
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 31. Base Emitter Saturation Voltage vs.
Collector Current
Figure 32. Base Emitter Voltage vs. Collector
Current
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0.1
BC846, BC847, BC848
BC847C, BC848C
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 34. Base−Emitter Temperature
Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 33. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 35. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 36. Current−Gain − Bandwidth Product
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10
50
BC846, BC847, BC848
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1
100 mS 10 mS
1 mS
1S
0.1
Thermal Limit
0.01
100 mS 10 mS
1 mS
0.1
1S
Thermal Limit
0.01
0.001
0.001
1
10
0.1
100
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 37. Safe Operating Area for
BC846A, BC846B
Figure 38. Safe Operating Area for
BC847A, BC847B, BC847C
IC, COLLECTOR CURRENT (A)
1
100 mS 10 mS
1 mS
1S
0.1
Thermal Limit
0.01
0.001
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 39. Safe Operating Area for
BC848A, BC848B, BC848C
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11
100
100
BC846, BC847, BC848
DEVICE ORDERING AND SPECIFIC MARKING INFORMATION
Device
Specific Marking Code
Package
Shipping†
BC846BWT1G
1B
3,000 / Tape & Reel
1E
3,000 / Tape & Reel
1F
3,000 / Tape & Reel
SBC846BWT1G*
BC847AWT1G
SBC847AWT1G*
BC847BWT1G
SBC847BWT1G*
SC−70 (SOT−323)
(Pb−Free)
BC847CWT1G
SBC847CWT1G*
1G
3,000 / Tape & Reel
BC847CWT3G
SBC847CWT3G*
1G
10,000 / Tape & Reel
BC848BWT1G
NSVBC848BWT1G*
BC848CWT1G
1K
3,000 / Tape & Reel
1L
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
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12
BC846, BC847, BC848
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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