Z ibo Seno Electronic Engineering Co., Ltd. MBR840CD-MBR8200CD 8.0 A SCHOTTKY BARRIER DIODE Features ! ! ! ! ! ! Schottky Barrier Chip Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency For Use in Low Voltage Application Guard Ring Die Construction Plastic Case Material has UL Flammability Classification Rating 94V-O TO-252/DPAK Mechanical Data ! ! ! ! ! Case: TO-252/DPAK, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Mounting Position: Any Lead Free: For RoHS / Lead Free Version Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage VRRM VRWM VR 40 45 50 60 80 100 150 200 V VR(RMS) 28 31 35 42 56 70 105 140 V @TL = 75°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) @IF = 4A @TA = 25°C @TA = 100°C Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 1) Operating and Storage Temperature Range MBR MBR MBR MBR MBR MBR MBR MBR 840CD 845CD 850CD 860CD 880CD 8100CD 8150CD 8200CD Units IO 8. 0 A IFSM 100 A V FM 0.70 0.92 0.1 20 IRM Cj 0.85 0.80 350 mA 280 200 pF °C/W 3 RJA -55 to +150 Tj, TSTG V -55 to +175 °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. MBR840CD-MBR8200CD 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. MBR840CD-MBR8200CD RATING AND CHARACTERISTIC CURVES FIG.2-TYPICAL FORWARD FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 12 50 0 20 40 60 80 100 120 140 160 180 200 CASE TEMPERATURE,(°C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 150 5V V 0V 00 ~1 ~4 0~ 20 80 V 0 3.0 15 00 5V 2 0V -2 -4 4 10 20 50 40 6 ~6 8 50 INSTANTANEOUS FORWARD CURRENT,(A) 10 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 120 90 Tj=25 C 8.3ms Single Half Sine Wave 60 FIG.4 - TYPICAL REVERSE JEDEC method 30 CHARACTERISTICS 100 20V~45V 50V~200V 0 1 5 10 50 100 10 REVERSE LEAKAGE CURRENT, (mA) NUMBER OF CYCLES AT 60Hz TJ=100°C 1.0 0.1 TJ=25°C 0.01 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) MBR840CD-MBR8200CD 2 of 2 www.senocn.com Alldatasheet