ZSELEC MBR860CD 8.0 a schottky barrier diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
MBR840CD-MBR8200CD
8.0 A SCHOTTKY BARRIER DIODE
Features
!
!
!
!
!
!
Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
For Use in Low Voltage Application
Guard Ring Die Construction
Plastic Case Material has UL Flammability
Classification
Rating 94V-O
TO-252/DPAK
Mechanical Data
!
!
!
!
!
Case: TO-252/DPAK, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
VRRM
VRWM
VR
40
45
50
60
80
100
150
200
V
VR(RMS)
28
31
35
42
56
70
105
140
V
@TL = 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
@IF = 4A
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
MBR
MBR
MBR
MBR
MBR
MBR
MBR
MBR
840CD 845CD 850CD 860CD 880CD 8100CD 8150CD 8200CD Units
IO
8. 0
A
IFSM
100
A
V
FM
0.70
0.92
0.1
20
IRM
Cj
0.85
0.80
350
mA
280
200
pF
°C/W
3
RJA
-55 to +150
Tj, TSTG
V
-55 to +175
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MBR840CD-MBR8200CD
1 of 2
www.senocn.com
Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd.
MBR840CD-MBR8200CD
RATING AND CHARACTERISTIC CURVES
FIG.2-TYPICAL FORWARD
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
12
50
0
20
40
60
80
100
120
140
160
180
200
CASE TEMPERATURE,(°C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
150
5V
V
0V
00
~1
~4
0~
20
80
V
0
3.0
15
00
5V
2
0V
-2
-4
4
10
20
50
40
6
~6
8
50
INSTANTANEOUS FORWARD CURRENT,(A)
10
1.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
120
90
Tj=25 C
8.3ms Single Half
Sine Wave
60
FIG.4 - TYPICAL REVERSE
JEDEC method
30
CHARACTERISTICS
100
20V~45V
50V~200V
0
1
5
10
50
100
10
REVERSE LEAKAGE CURRENT, (mA)
NUMBER OF CYCLES AT 60Hz
TJ=100°C
1.0
0.1
TJ=25°C
0.01
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
MBR840CD-MBR8200CD
2 of 2
www.senocn.com
Alldatasheet
Similar pages