MEMS Oscillator, -55°C to +125°C, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000MHz Features: Typical Applications: MEMS Technology Direct pin to pin drop-in replacement for industry-standard packages Ultra-low phase jitter: 0.5 pSec (12 kHz to 20 MHz) LVCMOS/HCMOS Compatible Output Industry-standard package 2.0 x1.6, 2.5 x 2.0, 3.2 x 2.5, and 5.0 x 3.2 mm x mm Pb-free, RoHS and REACH compliant Fast delivery times IM830 Series Fibre Channel Server and Storage GPON, EPON 100M / 1G /10G Ethernet Ruggedized equipment in harsh operating environment Electronic Specifications: Frequency Range Frequency Stability 1.000 MHz to 110.000MHz See Part Number Guide Operating Temperature Supply Voltage (Vdd) ±10% Current Consumption -55°C of +125°C See Part Number Guide 3.8 mA typ./ 4.7 mA max 3.6 mA typ./ 4.5 mA max 3.5 mA typ./ 4.5 mA max 4.5 mA max 4.3 mA max 2.6 µA typ./ 8.5 µA max, 1.4 µA typ./ 5.5 µA max 0.6 µA typ./ 4.0 µA max OE Disable Current Standby Current Waveform Output Symmetry Rise / Fall Time Logic “1” Logic “0” Input Voltage High Input Voltage Low Input Pull-up Impedance Startup Time Enable/Disable Time Resume Time RMS Period Time Peak-to-Peak Period Jitter RMS Period Time (random) LVCMOS/HCMOS 45%/55% 1.0 nSec typ./ 2.0 nSec max 1.3 nSec typ./ 2.5 nSec max 90% of Vdd min 10% of Vdd max 70% of Vdd min 30% of Vdd max 50 Ω min / 87 kΩ typ./ 150 kΩ max 2.0 MΩ min 5 mSec max 130 nSec max 5 mSec max 1.6 pSec typ./ 2.5 pSec max 1.9 pSec typ./ 3.0 pSec max 12 pSec typ./ 20 pSec max 14 pSec typ./ 25 pSec max 0.5 pSec typ./ 0.8 pSec max 1.3 pSec typ. / 2.0 pSec max st Inclusive of initial tolerance at +25°C, 1 year aging at +25°C, and variations over operating temperature, rated power supply, voltage and load (15 pF±10%) No load condition, f = 20 MHz, Vdd = +2.8 V, +3.0 V or +3.3 V No load condition, f = 20 MHz, Vdd = +2.5 V No load condition, f = 20 MHz, Vdd = +1.8 V Vdd = +2.5 V, or +3.3 V, OE = Low, output is high Z state Vdd = +1.8 V, OE = Low, output is high Z state Vdd = +2.8 V to 3.3 V, ST = low Vdd = +2.5 V, ST = Low Vdd = +1.8 V, ST = Low 50% of waveform Vdd = +2.5 V, +2.8 V, 3.0 V or 3.3 V from 20% to 80% of waveform Vdd = +1.8 V, from 20% to 80% of waveform Pin 1, OE or ST Pin 1, OE or ST Pin 1, OE logic high or logic low, or ST logic high Pin 1, ST logic low Measured from the time Vdd reaches its rated minimum values F = 110 MHz, For other frequencies, T_oe = 100 nSec + 3 * clock periods Measured from the time ST pin crosses 50% threshold. F = 75 MHz, Vdd = +2.5 V, +2.8 V, +3.0 V or +3.3 V F = 75 MHz, Vdd = +1.8 V F = 75 MHz, Vdd = +2.5 V, +2.8 V, +3.0 V or +3.3 V F = 75 MHz, Vdd = +1.8 V F = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz F = 75 MHz, Integration bandwidth = 12.0 kHz to 20.0 MHz Notes: All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated. Typical values are at +25ºC and nominal supply voltage. ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev 01/30/16_A Page 1 of 9 MEMS Oscillator, -55°C to +125°C, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000MHz IM830 Series Ordering Information: Part Number Guide Input Voltage Packages IM830B – 5.0 x 3.2 IM830C – 3.2 x 2.5 IM830D – 2.5 x 2.0 IM830E – 2.0 x 1.6 1 = +1.8 V 6 = +2.5 V 2 = +2.7 V 7 = +3.0 V 3 = +3.3 V Operating Temperature Output Drive Strength 7 = -55ºC to +125ºC - = Default (see tables 2 through 6) Stability (ppm) F = ±20 A = ±25 Z = ±30 B = ±50 Select Function H = Tri-state S = Standby O = N/C Frequency - Frequency Sample Part Number: IM830C-67-FS-10.0000MHz This 10.0000 MHz oscillator in a 3.2 x 2.5 package with stability ±20 ppm from -55ºC to +125ºC using a supply voltage of +2.5 V. The Output Drive Strength (Rise and Fall Time) is 2.01 nSec per Table 3 with 30 pF load. With Pin 1 function as Standby Sample Part Number: IM830B-17EAT-66.0000MHz This 66.0000 MHz oscillator in a 5.0 x 3.2 package with stability ±25 ppm from -55ºC to +125ºC using a supply voltage of +1.8 V. The Output Drive Strength (Rise and Fall Time) is 2.94 nSec per Table 1 with 30 pF load. With Pin 1 function as Tri-state Notes: Not all options are available at all frequencies and temperatures ranges. Please consult with sales department for any other parameters or options. Oscillator specification subject to change without notice. Absolute Maximum Limits Storage Temperature Supply Voltage (Vdd) Electrostatic Discharge Solder Temperature (follow standard Pb free soldering guidelines) Junction Temperature Test Circuit -65ºC to +150ºC -0.5 VDC to 4.0 VDC 2000 V max 260ºC max 150ºC max Waveform ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev 01/30/16_A Page 2 of 9 MEMS Oscillator, -55°C to +125°C, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000MHz IM830 Series Performance Plots: Figure 1: Idd vs Frequency Figure 2: Frequency vs Temperature Figure 3; RMS Period Jitter vs Frequency Figure 4: Duty Cycle vs Frequency Figure 5: 20% to 80% Rise Time vs Temperature Figure 6: 20% to 80% Fall Time vs Temperature ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev 01/30/16_A Page 3 of 9 MEMS Oscillator, -55°C to +125°C, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000MHz Figure 7: RMS Integrated Phase Jitter Random (12 kHz to 20.0 MHz) vs. Frequency IM830 Series Figure 8: RMS Integrated Phase Jitter Random (900 kHz to 20.0 MHz) vs. Frequency Environmental Specifications: Environmental Compliance Parameter Condition/Test Method MIL-STD-883F, Method 2002 MIL-STD-883F, Method 2007 JESD22, Method A104 MIL-STD-883F, Method 2003 MSL Level 1 at +260ºC Mechanical Shock Mechanical Vibration Temperature Cycle Solderability Moisture Sensitivity Level Pb Free Solder Reflow Profile Units are backward compatible with +240ºC reflow processes Ts max to TL (Ramp-up Rate) Preheat Temperature min (Ts min) Temperature typ (Ts typ) Temperature max (Ts max) Time (Ts) Ramp-up Tate (TL to Tp Time Maintained Above Temperature (TL) Time (TL) Peak Temperature (Tp) Time within 5ºC to Peak Temperature (Tp) Ramp-down Rate Tune 25ºC to Peak Temperature Moisture Sensitivity Level (MSL) ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice 3ºC / second max 150ºC 175ºC 200ºC 60 to180 seconds 3ºC / second max 217ºC 60 to 150 seconds 260ºC max for seconds 20 to 40 seconds 6ºC / second max 8 minute max Level 1 Rev 01/30/16_A Page 4 of 9 MEMS Oscillator, -55°C to +125°C, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000MHz IM830 Series Pin Functionally Pin Description Pin Symbol 1 OE Tri-state ST Standby N/C No Connect Functionality High or Open = specified frequency output Low = Output is high impedance, only output is disabled. High or Open = specified frequency output. Low = Output is low. Device goes to sleep mode. Supply current reduces to standby current. Any voltage between 0.0 V to Vdd or Open = specified frequency output Pin 1 has no functiion Electrical ground Oscillator output Power supply voltage Pin Assignments OE ST 1 N/C Vdd 3 OUT Top View 2 GND Power 3 Out Output 4 Vdd Power Notes: 1. In OE or ST mode, a pull-up resistor of 10.0 kΩ or less is recommended if Pin 1 is not externally driven. If Pin 1 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 µF or higher between Pin 4 (Vdd) and Pin 1 (GND) is required. Pin 1 Configuration Options (OE, or 4 GND 2 , or NC) Pin 1 of the IM830 can be factory-programmed to support three modes: Output Enable (OE), Standby (ST) or No Connect (NC). Output Enable (OE) Mode In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in <1 µSec. Standby Mode In the mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The current is reduced to a standby current, typically in the range of a few µA. When ST is pulled High, the device goes through the “resume” process, which can take up to 5 mSec. No Connect (NC) Mode In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level on Pin 1. Table 1 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode. Parameters Active current 20.0 MHz (max +1.80 VDC) OE disable current (max +1.80 VDC) Standby current (typical +1.80 VDC) OE enable time at 20.0 MHz (max) Resume time from standby (max, all frequency) Output driver in OE disable/standby mode Table 1 OE vs. OE 4.5 mA 4.3 mA N/A 130 nSec ST 4.5 mA N/A 0.6 µA N/A NC 4.5 mA N/A N/A N/A N/A 5 mSec N/A High Z vs. NC N/A ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev 01/30/16_A Page 5 of 9 MEMS Oscillator, -55°C to +125°C, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000MHz IM830 Series Timing Diagrams: Figure 9: Startup Timing (OE/ Mode) Figure 11: OE Enable Timing (OE Mode Only) Figure 10: Standby Resume Timing ( Mode Only) Figure 12: OE Disable Timing (OE Mode Only) ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev 01/30/16_A Page 6 of 9 MEMS Oscillator, -55°C to +125°C, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000MHz IM830 Series Selectable Drive Strength Options Rise/Fall Time (20% to 80%) vs CLOAD Tables Rise/Fall Time Typ (nS) Drive Strength (CLOAD) L A R B Rise/Fall Time Typ (nS) 5 pF 15 pF 30 pF 45 pF 60 pf 6.16 3.19 2.11 1.65 11.61 6.35 4.31 3.23 22.00 11.00 7.65 5.79 31.27 16.01 10.77 8.18 39.91 21.52 14.47 11.08 Drive Strength (CLOAD) L A R B 5 pF 15 pF 30 pF 45 pF 60 pf 4.13 2.11 1.45 1.09 8.25 4.27 2.81 2.20 12.82 7.64 5.16 3.88 21.45 11.20 7.65 5.86 27.79 14.49 9.88 7.57 4.45 T 0.93 1.91 3.32 4.66 6.48 T 0.62 1.28 2.27 3.51 E 0.78 1.66 2.94 4.09 5.74 - = Default 0.54 1.00 2.01 3.10 4.01 U 0.70 1.48 2.64 3.68 5.09 U 0.43 0.96 1.81 2.79 3.65 - = Default 0.65 1.30 2.40 3.35 4.56 F 0.34 0.88 1.64 2.54 3.32 Table 2: Vdd = +1.8 V Rise/Fall time for Specific CLOAD Table 3: Vdd = +2.5 V Rise/Fall time for Specific CLOAD Rise/Fall Time Typ (nS) Drive Strength (CLOAD) L A R B Rise/Fall Time Typ (nS) 5 pF 15 pF 30 pF 45 pF 60 pf 3.77 1.94 1.29 0.97 7.54 3.90 2.57 2.00 12.28 7.03 4.72 3.54 19.57 10.24 7.01 5.43 25.27 13.34 9.06 6.93 Drive Strength (CLOAD) L A R B T 0.55 1.12 2.08 3.22 4.08 - = Default 0.51 1.00 1.97 3.07 3.90 - = Default 0.44 1.00 1.83 2.82 3.67 E 0.38 0.92 1.72 2.71 3.51 5 pF 15 pF 30 pF 45 pF 60 pf 3.60 1.84 1.22 0.89 7.21 3.71 2.46 1.92 11.97 6.72 4.54 3.39 18.74 9.86 6.76 5.20 24.30 12.68 8.62 6.64 U 0.34 0.88 1.64 2.52 3.30 U 0.30 0.83 1.55 2.40 3.13 F 0.29 0.81 1.48 2.29 2.99 F 0.27 0.76 1.39 2.16 2.85 Table 4: Vdd = +2.8 V Rise/Fall time for Specific CLOAD Table 5: Vdd= +3.0 V Rise/Fall time for Specific CLOAD Rise/Fall Time Typ (nS) Drive Strength (CLOAD) L A R B 5 pF 15 pF 30 pF 45 pF 60 pf 3.39 1.74 1.16 0.81 6.88 3.50 2.33 1.82 11.63 6.38 4.29 3.22 17.56 8.98 6.04 4.52 23.59 12.19 8.34 6.33 - = Default 0.46 1.00 1.86 2.60 3.84 E 0.33 0.87 1.64 2.30 3.35 U 0.28 0.79 1.46 2.05 2.93 F 0.25 0.72 1.31 1.83 2.61 Table 6: Vdd = +3.3 V Rise/Fall time for Specific CLOAD ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev 01/30/16_A Page 7 of 9 MEMS Oscillator, -55°C to +125°C, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000MHz IM830 Series Mechanical Details: Package Dimensions and Suggest Land Pattern Option E: 2.00 x 1.60 x 0.80 Package Suggested Land Pattern 2.00 ±0.05 1.23 3 Marking 1.60 ±0.05 0.93 1.50 4 Bottom View 2 0.80 max 1 0.48 1.20 0.8 0.68 0.9 Option D: 2.50 x 2.00 x 0.80 Package Suggested Land Pattern 1.00 2.50 ±0.05 1.90 3 Marking 2.00 ±0.05 1.10 4 Bottom View 2 0.80 max 1 0.5 1.50 1.0 0.75 1.1 Option C: 3.20 x 2.50 x 0.80 Package Suggested Land Pattern 3.20 ±0.05 2.1 2.20 3 Marking 2.50±0.05 0.90 4 Bottom View 1 2 0.80 max 0.7 1.90 1.2 0.9 1.4 Option B: 5.00 x 3.20 X 0.80 Package Suggested Land Pattern 5.00 ±0.05 2.39 3 Marking 3.20 ±0.05 0.80 4 Bottom View 2 0.80 max 2.54 1 1.1 2.20 1.6 1.15 1.5 Marking Line 1 = XXXXX (Lot code) Dot to denote Pin 1 location Package Information Leadframe: C194 Plating: NiPdAu ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev 01/30/16_A Page 8 of 9 MEMS Oscillator, -55°C to +125°C, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000MHz IM830 Series Tape and Reel Dimensions PITCH Q1 Q2 REEL DIA TAPE WIDTH Q3 Q4 DIRECTION OF FEED REF: EIA-481-E Part Number Size Pitch Tape Width Pin Orient. IM830B 5.0 x 3.2 8.0 ± 0.1 12.3 max Q1 IM830C IM830D IM830E 3.2 x 2.5 2.5 x 2.0 2.0 x 1.6 4.0 ± 0.1 4.0 ± 0.1 4.0 ± 0.1 8.3 max 8.3 max 8.3 max Q1 Q1 Q1 Reel Dia. 180 Dia 330 Dia 180 Dia 180 Dia 180 Dia Count 1000 3000 3000 3000 3000 Notes:` All dimensions are in mm. Do not scale drawings. PROPRIETARY AND CONFIDENTIAL THIS DOCUMENT CONTAINS PROPRIETARY INFORMATION, AND SUCH INFORMATION MAY NOT BE DISCLOSED TO OTHERS FOR ANY PURPOSE NOR USED FOR MANUFACTURING PURPOSES WITHOUT WRITTEN PERMISSION FROM ILSI America. ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev 01/30/16_A Page 9 of 9