DMN2050LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) max ID max TA = +25°C 45mΩ @ VGS = 4.5V 4.5A 55mΩ @ VGS = 2.5V 4.1A V(BR)DSS 20V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors Case: U-DFN2020-6 Type B Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (approximate) D1 D2 S2 G2 D2 D1 D2 G2 G1 D1 G1 S1 Pin1 S2 S1 Bottom View Internal Schematic Ordering Information (Note 4) Part Number DMN2050LFDB -7 DMN2050LFDB -13 Notes: Case DFN2020-6 Type B DFN2020-6 Type B Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information M5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) M5 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMN2050LFDB Document number: DS36473 Rev. 2 - 2 Mar 3 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D September 2013 © Diodes Incorporated DMN2050LFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH Continuous Drain Current (Note 6) VGS = 4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 20 ±12 3.3 2.6 ID Units V V A 4.5 3.6 1 25 9 4.5 ID IS IDM IAR EAR A A A A mJ Thermal Characteristics Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) PD TA = +70°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) PD RθJC 0.90 89 57 18 TJ, TSTG -55 to +150 TA = +70°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Units W 0.46 173 110 1.42 RJA TA = +25°C Total Power Dissipation (Note 6) Value 0.73 °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 – – – – – – 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD – 28 36 9 0.75 1.0 45 55 – 1.0 V Static Drain-Source On-Resistance 0.4 – – – – VDS = VGS, ID = 250μA VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 4.2A VDS = 5V, ID = 5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr – – – – – – – – – – – – – – 389 72 63 2.1 5.7 12 0.7 1.5 5 8 25 8 8.5 2.1 – – – – – – – – – – – – – – Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, ID = 5.8A VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A IF = 5A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN2050LFDB Document number: DS36473 Rev. 2 - 2 2 of 6 www.diodes.com September 2013 © Diodes Incorporated DMN2050LFDB 30.0 20 VGS = 10V 25.0 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V VGS = 2.0V 10 10.0 VGS = 1.5V 8 6 TA = 85°C 4 5.0 0.0 0 T A = 25°C 2 VGS = 1.2V 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics T A = -55°C 0 2 0 0.1 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.15 0.08 VGS = 1.8V 0.06 VGS = 2.5V 0.04 VGS = 4.5V 0.02 0 0.06 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.12 ID = 5.0A 0.09 0.06 ID = 4.2A 0.03 20 0 0 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 12 2 VGS = 4.5V 1.8 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () T A = 125°C 12 15.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA = 150°C 14 20.0 0 VDS = 5.0V 18 VGS = 2.5V VGS = 3.5V TA = 150°C 0.04 TA = 125°C TA = 85°C 0.03 T A = 25°C 0.02 TA = -55°C 0.01 VGS = 5V ID = 5.0A 1.6 1.4 1.2 VGS = 10 V ID = 10A 1 0.8 0.6 0.4 0.2 0.00 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN2050LFDB Document number: DS36473 Rev. 2 - 2 20 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature September 2013 © Diodes Incorporated DMN2050LFDB 1 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.06 0.05 VGS = 5V ID = 5.0A 0.04 0.03 VGS = 10V ID = 10A 0.02 0.01 0.8 ID = 1mA 0.6 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 100 20 18 14 -ID, DRAIN CURRENT (A) IS, SOURCE CURRENT (A) RDS(on) Limited PW = 100µs 16 TA = 150°C 12 TA = 125°C 10 TA = 85°C 8 TA = 25°C 6 TA = -55°C 4 2 0 ID = 250µA 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current r(t), TRANSIENT THERMAL RESISTANCE 1 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 TJ(max) = 150°C PW = 10ms PW = 1ms TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 SOA, Safe Operation Area 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 183°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 DMN2050LFDB Document number: DS36473 Rev. 2 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1,000 September 2013 © Diodes Incorporated DMN2050LFDB Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions Z G G1 X1 X2 Y Y1 C G X2 G1 X1 G Z DMN2050LFDB Document number: DS36473 Rev. 2 - 2 Y1 5 of 6 www.diodes.com Value (in mm) 1.67 0.20 0.40 1.0 0.45 0.37 0.70 0.65 September 2013 © Diodes Incorporated DMN2050LFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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