Spec. No. : C875I3S Issued Date : 2017.01.25 Revised Date : Page No. : 1/8 CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTE300N20I3S BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=3A 200V 8.3A 294mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Outline TO-251S MTE300N20I3S G：Gate D：Drain S：Source G D S Ordering Information Device MTE300N20I3S-0-UA-G Package TO-251S (RoHS compliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTE300N20I3S CYStek Product Specification Spec. No. : C875I3S Issued Date : 2017.01.25 Revised Date : Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=10mH, IAS=4A, VDD=50V, VGS=10V Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS 200 ±30 8.3 5.3 18 4 80 5 50 20 -55~+150 ID *3 IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% *3. 100% tested by conditions of L=10mH, IAS=3A, VGS=10V, VDD=50V Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 2.5 110 Unit °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 MTE300N20I3S Min. Typ. Max. Unit Test Conditions 200 2 - 0.2 3.2 294 4 ±100 1 25 360 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS =VGS, ID=250μA VDS =15V, ID=2A VGS=±30V, VDS=0V VDS =160V, VGS =0V VDS =160V, VGS =0V, Tj=125°C VGS =10V, ID=3A - 10.2 2.2 3.8 8.8 17 21.2 20.4 - μA mΩ nC ID=3A, VDS=160V, VGS=10V ns VDS=100V, ID=3A, VGS=10V, RG=25Ω CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 373 46 20 - - 0.78 54 105 8.3 18 1.2 - pF Spec. No. : C875I3S Issued Date : 2017.01.25 Revised Date : Page No. : 3/8 VGS=0V, VDS=25V, f=1MHz A V ns nC IS=2A, VGS=0V IF=3A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. MTE300N20I3S CYStek Product Specification Spec. No. : C875I3S Issued Date : 2017.01.25 Revised Date : Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 18 16 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V ID, Drain Current (A) 14 12 5.5V 10 8 6 5V 4 2 1.2 1 0.8 0.6 ID=250μA, VGS=0V VGS=4.5V 0.4 0 0 5 10 15 VDS, Drain-Source Voltage(V) -75 -50 -25 20 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1000 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=6V VGS=10V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 100 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 1000 ID=3A 900 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 800 700 600 500 400 300 2 VGS=10V, ID=3A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 294mΩ 0 200 0 MTE300N20I3S 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C875I3S Issued Date : 2017.01.25 Revised Date : Page No. : 5/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 10 0 5 10 15 20 VDS, Drain-Source Voltage(V) 25 -75 -50 -25 30 50 75 100 125 150 175 Gate Charge Characteristics 10 10 VDS=10V VDS=100V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current VDS=15V 1 0.1 Ta=25°C Pulsed 0.01 0.001 0 8 VDS=40V 6 VDS=160V 4 2 ID=3A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 Qg, Total Gate Charge(nC) 10 12 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 10 100 10 1ms 10ms 100ms 1 1s DC 0.1 TC=25°C, Tj=150°C VGS=10V, RθJC=2.5°C/W Single Pulse ID, Maximum Drain Current(A) ID, Drain Current(A) 9 100μs RDSON Limited 8 7 6 5 4 3 2 VGS=10V, RθJC=2.5°C/W 1 0 0.01 0.1 MTE300N20I3S 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C875I3S Issued Date : 2017.01.25 Revised Date : Page No. : 6/8 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 1000 16 900 14 VDS=10V 12 700 Power (W) ID, Drain Current(A) TJ(MAX) =150°C TC=25°C RθJC=2.5°C/W 800 10 8 6 600 500 400 300 4 200 2 100 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE300N20I3S 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C875I3S Issued Date : 2017.01.25 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE300N20I3S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C875I3S Issued Date : 2017.01.25 Revised Date : Page No. : 8/8 TO-251S Dimension Marking : Device Name Date Code 3-Lead TO-251S Plastic Package CYStek Package Code: I3S Style : Pin 1. Gate 2. Drain Inches Min. Max. 0.2559 0.2638 0.2020 0.2126 0.4094 0.4331 0.0280 0.0319 0.0858 0.0941 0.0858 0.0941 0.0181 0.0220 0.0902 0.0937 DIM A B C E F G H I Millimeters Min. Max. 6.50 6.70 5.13 5.46 10.40 11.00 0.71 0.81 2.18 2.39 2.18 2.39 0.46 0.56 2.29 2.38 DIM J K L M S T U V Inches Min. Max. 0.2362 0.2441 0.1299 0.1457 0.0358 0.0437 0.0181 0.0220 0.1902 REF 0.2106 REF 0.0701 REF 0.0299 REF 3. Source Millimeters Min. Max. 6.00 6.20 3.30 3.70 0.91 1.11 0.46 0.56 4.83 REF 5.35 REF 1.78 REF 0.76 REF Notes: 1.Controlling dimension: inch. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE300N20I3S CYStek Product Specification