<~>E.mL-L.onauctoi \Pioau.cki, One.
20STIERN AVE.
SPRIN GFIELD, NEW JERSEY 07081
U.S.A.
D64VS3,4,5
HONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
TELEP
300-400 VOLTS
15 AMP, 195 WATTS
The D64VS series of NPN power transistors is designed for
use in power switching applications requiring high-voltage
capability, fast switching speeds and low-saturation voltages.
These devices are optimized to provide a unique combination
of ultra-low switching losses and high safe-operating area
[SOA), ideally suited for off-line switching power supplies,
converter circuits and pulse width modulated regulators.
***""
NPN
COLLECTOR
~"^i
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features:
0 845121 471
hMAX 1
• Performance information tailored for switching
i- 358(909) MAI
DIA *\
{
• 100°C maximum limits specified for:
• Switching times
• Saturation voltages
• Leakage currents
0043(109)
0038(097)
11
n ,^
[
X-
D
I!
1— 426(1082) M N
I 1050!2< 681.
•
» RBSOA (VcEX = 300 to 400V) at rated IG continuous.
MAX
/©
"I
V
\
••A
CASE TEMP
f / '. i
REFERENCE
'
| \^. 1
POINT
T \rfV~fr
20 5.001—' x\
EMITTER ' ) y®
» Very fast turn-off, tf < 100 nsec (typ.)
@ 15A — Inductive Load
Q.»75I17.15I
0850(1851)
jtt^rS-.
/V J if"
'
BASE -fS
1 197(3040)
6)
*v
0205(52')
2"0l-ES'
i
\ 162(409
n,A
_/ COLLECT DR
0 225(5
72|\-
0440,,
«S»SE>
'8,
0420f'067)
maximum ratings
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peak'1'
Base Current — Continuous
Peak'1'
Emitter Current — Continuous
Peak'1'
Total Power Dissipation @ Tc = 25° C
@Tc = 100°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
D64VS3
300
300
450
7
15
30
5
10
20
35
195
111
1.11
D64VS4
350
350
500
7
15
30
5
10
20
35
195
111
1.11
D64VS5
TJ, TSTG
-65 to +200
-65 to +200
-65 to +200
°C
R0JC
0.9
0.9
0.9
°C/W
TL
235
235
235
°C
VCEO
VCEX
VCEV
VEBO
'CM
IB
[BM
IEM
PD
400
400
550
7
15
30
5
10
20
35
195
111
1.11
UNITS
Volts
Volts
Volts
Volts
A
A
A
Watts
W/°C
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purpose: Ve" from Case for 5 Seconds
(1) Pulse condition, tn < 5msec.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical Characteristics (Tc= 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
MAX
UNIT
300
350
400
300
350
400
—
Volts
—
0.1
1.0
—
1.0
off characteristics
Collector-Emitter Sustaining Voltage"'
(lc= 100mA)
D64VS3
D64VS4
D64VS5
VCEO(SUS)
Collector-Emitter Voltage
(lc = 15A, IB1 = 2.5A, IB2 " 3.0A)
(VBE(OFF) = -6V, L = 200 /ih)
Collector Cutoff Current
(VCEV = Rated Value, VBE(OFF) = -1-5V)
(VCEV = Rated Value, VBEJOFF) = -1-5V, Tc = 100°C)
Emitter Cutoff Current
(VEB = 7V)
D64VS3
D64VS4
D64VS5
VCEX
ICEV
IEBO
Volts
—
mA
mA
second breakdown
Second Breakdown with Base Forward Biased
Clamped Inductive SOA with Base Reversed Bias
FBSOA
RBSOA
SEE FIGURE 13
SEE FIGURE 14
on characteristics
DC Current Gain
(I C =10A,V C E = 2V)
(I C =15A,V C E = 2V)
Collector-Emitter Saturation Voltage
(IC=10A, le=1.67A)
(lc = 15A, IB * 2.5A)
(lc = 15A, IB = 2.5A, TC = 100°C)
Base-Emitter Saturation Voltage
(I C =15A, IB = 2.5A)
(lc = 15A, IB = 2.5A, TC = 100°C)
hFE
VCE(SAT)
10
8
—
—
0.7
1.0
1.5
—
Volts
Volts
VBE(SAT)
1.5
1.5
dynamic characteristics
Current Gain — Bandwidth Product
(lc = 1.0A, VCE = 10V, ftest = 1-0 MHz)
Output Capacitance
(VCB = iov, iE = o, f = 0.1 MHZ)
fr
15
50
MHz
COB
150
360
PF
switching characteristics
MAXIMUM
TC
25° C
td
0.1
100°C
0.2
MS
tr
0.5
0.7
Msec
ts
tf
2.5
3.0
Msec
0.4
0.7
Msec
ts
tf
3.0
3.5
0.6
Msec
Storage Time
ts
1.8
2.5
Msec
Fall Time
tf
.085
.13
Msec
Resistive Load (See Figure 17 for Test Circuit)
VCC = 250V, IC = 15A
Delay Time
Rise Time
Storage Time
Fall Time
IB1 = 2.5, \B2 = 3.0A, tp = 50 psec
Inductive Load, Clamped (See Figure 17 for Test Circuit)
Storage Time
IC = 15A,VCLAMP = 250V
Fall Time
IB1 = 2.5A, IB2 = 3.0A, VB£(OFF) = "6V
L = 200 /in, tp = 25/isec
(1) Pulse Duration = 300/js, Duty Factor < 2%. Do not measure on a curve tracer.
0.3
MS
TYPICAL