G5SBA20-M3, G5SBA60-M3, G5SBA80-M3 www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL recognition file number E54214 • Ideal for printed circuit boards • High surge current capability • High case dielectric strength of 1500 VRMS ~ ~ • Solder dip 275 °C max. 10 s, per JESD 22-B106 + - - ~ ~ • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 + Case Style GBU Case Style GBU TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for monitor, TV, printer, switching mode power supply, adapter, audio equipment, and home appliances applications. PRIMARY CHARACTERISTICS Package GBU IF(AV) 6.0 A VRRM 200 V, 600 V, 800 V IFSM 150 A IR 5 μA VF at IF = 3.0 A 1.05 V TJ max. 150 °C Diode variations In-line MECHANICAL DATA Case: GBU Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL G5SBA20 G5SBA60 G5SBA80 UNIT Maximum repetive peak reverse voltage VRRM 200 600 800 V Maximum RMS voltage VRWM 140 420 560 V VDC 200 600 800 V Maximum DC blocking voltage Maximum average forward rectified output current at TC = 100 °C (1) 6.0 IF(AV) TA = 25 °C (2) Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range A 2.8 IFSM 150 A I2t 93 A2s TJ, TSTG -55 to +150 °C Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode 3.0 A Maximum DC reverse current at rated DC blocking voltage per diode TJ = 25 °C TJ = 125 °C SYMBOL VF IR G5SBA20 G5SBA60 1.05 5.0 300 G5SBA80 UNIT V μA Revision: 05-Aug-15 Document Number: 89305 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 G5SBA20-M3, G5SBA60-M3, G5SBA80-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance G5SBA20 G5SBA60 RJA (2) 22 RJC (1) 3.4 G5SBA80 UNIT °C/W Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY G5SBA60-M3/45 3.565 45 20 DELIVERY MODE Tube G5SBA60-M3/51 3.565 51 250 Paper tray RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Output Current (A) 8.0 Heatsink Mounting, TC 6.0 4.0 P.C.B. Mounting, TA 2.0 0 0 100 50 1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0.1 0.01 0.4 150 0.6 0.8 1.0 1.2 1.4 1.6 Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 150 1000 Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) 10 TJ = TJ Max. Single Sine-Wave 100 50 1.0 Cycle 0 TJ = 125 °C 100 10 1 0.1 TJ = 25 °C 0.01 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Revision: 05-Aug-15 Document Number: 89305 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 G5SBA20-M3, G5SBA60-M3, G5SBA80-M3 www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 1 1 0.1 0.01 10 0.1 10 100 0.1 1 10 100 Reverse Voltage (V) t - Heating Time (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type GBU 0.020 R (TYP.) 0.310 (7.9) 0.290 (7.4) 0.085 (2.16) 0.065 (1.65) 0.140 (3.56) 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45° Chamfer 0.160 (4.1) 0.140 (3.5) 0.075 (1.9) R . 9° TYP. 0.740 (18.8) 0.720 (18.3) 0.080 (2.03) 0.060 (1.52) 5° TYP. 0.100 (2.54) 0.085 (2.16) 0.080 (2.03) 0.065 (1.65) 0.050 (1.27) 0.040 (1.02) 0.190 (4.83) 0.210 (5.33) 0.710 (18.0) 0.690 (17.5) 0.085 (2.16) 0.075 (1.90) 0.026 (0.66) 0.020 (0.51) Polarity shown on front side of case, positive lead by beveled corner Revision: 05-Aug-15 Document Number: 89305 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000