Ordering number : ENA2166 CPH6635 Power MOSFET http://onsemi.com 30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6 Features • • • • Excellent ON-resistance characteristic (P-Channel : RDS(on)1=215mΩ (typ.)) Optimal for load switch use (N-Channel for drive is embedded) N-Channel : 1.5V drive, P-Channel : 1.8V drive Halogen Free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions N-channel VDSS VGSS Gate to Source Voltage Drain Current (DC) P-channel Unit 30 --20 V ±10 ±10 V Allowable Power Dissipation ID IDP PD 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% 0.4 --1.5 A 1.6 --6.0 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions unit : mm (typ) 7018A-007 Device Package CPH6 SC-74, SOT-26, SOT-45 CPH6635-TL-H 3,000 pcs./reel 4 Packing Type: TL Marking 0.9 WW 1 2 0.95 3 0.4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 LOT No. 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 memo Pb Free and Halogen Free CPH6635-TL-H 0.15 2.9 6 Shipping TL Electrical Connection 6 5 4 1 2 3 CPH6 Semiconductor Components Industries, LLC, 2013 June, 2013 61213 TKIM TC-00002929/10913 TKIM No. A2166-1/8 CPH6635 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) | yfs | ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100μA 30 V 0.4 1 μA ±10 μA 1.3 V VDS=10V, ID=80mA 0.22 RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time S Ω 7 pF 5.9 pF 2.3 pF td(on) 19 ns Rise Time tr 65 ns Turn-OFF Delay Time td(off) Fall Time Total Gate Charge tf Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=150mA, VGS=0V V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA 155 ns 120 ns 1.58 nC 0.26 nC 0.31 0.87 nC 1.2 V --1 μA ±10 μA [P-channel] Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance --20 V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VGS(off) | yfs | VDS=--10V, ID=--1mA VDS=--10V, ID=--800mA 1.9 RDS(on)1 ID=--800mA, VGS=--4.5V 215 280 mΩ RDS(on)2 ID=--400mA, VGS=--2.5V 310 434 mΩ RDS(on)3 ID=--200mA, VGS=--1.8V 450 675 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --0.4 --1.4 V S 120 pF 26 pF Crss 20 pF Turn-ON Delay Time td(on) 5.3 ns Rise Time tr 9.7 ns Turn-OFF Delay Time 16 ns Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4V, ID=--1.5A 14 ns 1.7 nC 0.28 nC 0.47 IS=--1.5A, VGS=0V --0.9 nC --1.5 V No.8987-2/8 CPH6635 Switching Time Test Circuit [N-channel] VDD=15V VIN 0V --4.5V ID=150mA RL=100Ω VIN D PW=10μs D.C.≤1% VDD= --10V VIN VOUT D PW=10μs D.C.≤1% G VOUT G CPH6635 P.G ID= --800mA RL=12.5Ω VIN 50Ω ID -- VDS 0.16 CPH6635 P.G S [Nch] 50Ω S ID -- VGS 0.30 [Nch] 0.10 0.08 VGS=1.5V 0.06 0.04 --25 °C Ta= 0.20 °C V Drain Current, ID -- A V 2.0 75 V 0.25 2. 3.0 4.0V 0.12 6.0 Drain Current, ID -- A 3.5V 5V VDS=10V 0.14 25 °C 4V 0V [P-channel] 0.15 0.10 0.05 0.02 0 0 0 0.2 0.4 0.6 0.8 Drain to Source Voltage, VDS -- V RDS(on) -- VGS 10 0 1.0 0.5 1.0 1.5 2.5 2.0 Gate to Source Voltage, VGS -- V IT00029 [Nch] RDS(on) -- ID 10 [Nch] VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Ta=25°C 9 8 7 ID=80mA 6 40mA 5 3.0 IT00030 4 3 2 7 5 Ta=75°C 25°C 3 --25°C 2 1 0 0 1 2 3 4 5 6 7 8 Gate to Source Voltage, VGS -- V 9 10 IT00031 1.0 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT00032 No. A2166-3/8 CPH6635 RDS(on) -- ID 10 [Nch] 25°C --25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A RDS(on) -- Ta [Nch] 5V , =2. V GS mA 40 I D= 4 V 3 4.0 S= A, VG m 80 I D= 2 1 0 --60 --40 --20 0 20 40 80 60 100 120 140 Ambient Temperature, Ta -- °C °C --2 5 25 °C 75 °C 2 5 3 2 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 25°C 2 Ciss 7 Coss 3 Crss 2 0.01 3 5 7 0.1 IT00034 [Nch] 5 3 25°C -Ta= 2 25°C 75°C 0.1 7 5 3 2 2 3 Drain Current, ID -- A 5 7 2 7 1.0 IT00036 SW Time -- ID [Nch] 0.1 3 5 VDD=15V VGS=4V 5 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 2 3 5 7 2 0.1 Drain Current, ID -- A IT00038 VGS -- Qg 10 Gate to Source Voltage, VGS -- V 2 7 VDS=10V 10 0.01 [Nch] 3 2 5 7 1.2 5 5 3 7 [Nch] VDS=10V ID=150mA 9 10 2 | yfs | -- ID f=1MHz 7 Ciss, Coss, Crss -- pF --25°C 3 IT00037 Ciss, Coss, Crss -- VDS 100 5 1000 Switching Time, SW Time -- ns 3 Ta = Source Current, IS -- A 5 0.01 0.5 Ta=75°C 7 0.01 0.01 160 VGS=0V 7 10 Drain Current, ID -- A [Nch] 7 0.1 2 IT00035 IS -- VSD 1.0 3 1.0 6 5 VGS=1.5V 5 1.0 0.001 7 1.0 IT00033 7 Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Ta=75°C 5 [Nch] 7 Forward Transfer Admittance, | yfs | -- S Static Drain to Source On-State Resistance, RDS(on) -- Ω VGS=2.5V 7 RDS(on) -- ID 100 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain to Source Voltage, VDS -- V 18 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 No.8987-4/8 CPH6635 ASO 3 [Nch] IDP=1.6A (PW≤10μs) 2 1m s 7 10 ID=0.4A 5 ms 3 10 DC 2 0m op s era 0.1 Operation in this area is limited by RDS(on). 7 5 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit 0.01 1.0 2 3 5 7 2 10 3 Drain to Source Voltage, VDS -- V ID -- VDS [Pch] V .8 --1.2 --1.0 --0.8 --0.6 VGS= --1.0V --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.4 --0.2 --0.2 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain to Source Voltage, VDS -- V 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate to Source Voltage, VGS -- V IT14614 RDS(on) -- VGS 700 0 --0.9 --1.0 5°C V --1.5 Ta= 7 --1.4 Drain Current, ID -- A --1.6 --2 .5V Drain Current, ID -- A [Pch] VDS= --10V --1.8 --1.6 0 ID -- VGS --2.0 --1 --3 . --1.8 5V --8.0 V --4. 5V --2.0 5 IT11328 °C 2 n --2 5 3 tio 25 °C Drain Current, ID -- A 1.0 [Pch] RDS(on) -- Ta 700 --3.0 IT14615 [Pch] Static Drain to Source On-State Resistance, RDS(on) -- mΩ 600 ID= --0.2A 500 --0.4A 400 --0.8A 300 200 100 --1 --2 --3 --4 --5 --6 --7 --8 Gate to Source Voltage, VGS -- V | yfs | -- ID 300 200 100 0 --60 --10 --40 --20 0 20 [Pch] VDS= --10V 60 80 100 120 140 160 IT17000 IS -- VSD 5 [Pch] VGS=0V 3 3 2 °C 25 C 5° --2 = C Ta 75° 1.0 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0.1 2 3 5 7 --0.1 2 3 5 Drain Current, ID -- A 7 --1.0 2 3 IT14618 --0.01 0 --0.2 --0.4 C 2 7 --0.01 40 Case Temperature, Ta -- °C IT16999 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 --9 400 25°C --25 ° 0 A --0.2 , I D= V 8 . 1 = -VGS --0.4A , I D= V 5 . 2 = -VGS --0.8A ,I = --4.5V D = V GS 500 5°C 0 600 Ta= 7 Static Drain to Source On-State Resistance, RDS(on) -- mΩ Ta=25°C --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V --1.2 IT14619 No. A2166-5/8 CPH6635 SW Time -- ID [Pch] VDD= --10V VGS= --4.5V 3 Ciss 2 td (off) tf 10 tr 7 td(on) 5 100 7 5 Coss Crss 3 2 10 2 --0.1 2 3 5 7 2 --1.0 Drain Current, ID -- A 7 3 --2 --4 --6 --8 --10 --12 --14 [Pch] --10 7 5 --3.5 Drain Current, ID -- A 2 --2.5 --2.0 [Pch] 100 1m μs s 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC PD -- Ta 1.0 1.8 2.0 IT14622 10 DC 10 op ms 0m s era tio Operation in this area is limited by RDS(on). 2 --0.5 0 ID= --1.5A 3 --1.0 --20 IT14621 ASO --1.0 7 5 --0.1 7 5 --1.5 --18 IDP= --6A (PW≤10μs) 3 --3.0 --16 Drain to Source Voltage, VDS -- V VDS= --10V ID= --1.5A --4.0 0 IT14620 VGS -- Qg --4.5 Gate to Source Voltage, VGS -- V [Pch] f=1MHz 2 3 Allowable Power Dissipation, PD -- W Ciss, Coss, Crss -- VDS 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 n Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain to Source Voltage, VDS -- V 2 3 5 IT17001 [Nch/Pch] When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16651 No.8987-6/8 CPH6635 Outline Drawing CPH6635-TL-H Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A2166-7/8 CPH6635 Note on usage : Since the CPH6635 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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