MSTC25 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 25Amp Applications Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 5 4 International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Module Type TYPE VRRM VRSM MSTC25-08 MSTC25-12 MSTC25-16 800V 1200V 1600V 900V 1300V 1700V Maximum Ratings Symbol Conditions Values Units ITAV Sine 180 ;Tc=85℃ o 25 A ITSM TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 550 480 A it TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 1500 1150 A2s Visol a.c.50HZ;r.m.s.;1min 3000 V -40 to 125 ℃ 2 Tvj Tstg -40 to 125 ℃ Mt To terminals(M5) 3±15% Nm Ms To heatsink(M6) 5±15% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt TJ= TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s Weight Module(Approximately) 100 g Symbol Conditions Values Units Rth(j-c) Cont.;per thyristor / per module 0.9/0.45 ℃/W Rth(c-s) per thyristor / per module 0.2/0.1 ℃/W 2 Thermal Characteristics Document Number: MSTC25 Sep.06,2013 www.smsemi.com 1 MSTC25 Electrical Characteristics Symbol Conditions VTM T=25℃ ITM =120A IRRM/IDRM Min. Values Typ. Max. Units 1.95 V TVJ =TVJM ,VR=VRRM ,VD=VDRM 10 mA V rT For power-loss calculations only (TVJ =125℃) TVJ =TVJM 0.9 12 mΩ VGT TVJ =25℃ , VD =6V 2.5 V IGT TVJ =25℃ , VD =6V 150 mA VGD TVJ =125℃ , VD =2/3VDRM 0.25 V IGD TVJ =125℃ , VD =2/3VDRM 5 mA IL TVJ =25℃ , RG = 33 Ω 250 400 mA IH TVJ =25℃ , VD =6V 100 260 tgd TVJ =25℃, IG=1A, diG/dt=1A/us 1 mA us tq TVJ =TVJM 80 us VTO Document Number: MSTC25 Sep.06,2013 www.smsemi.com 2 MSTC25 Performance Curves 75 50 W A sin.180 DC rec.120 40 DC rec.60 50 30 rec.30 sin.180 rec.120 20 25 rec.60 rec.30 10 PTAV 0 ITAVM 0 ITAV 10 20 30 A 40 0 0 Fig1. Power dissipation Tc 150 ℃ 50 100 ℃ 130 Fig2.Forward Current Derating Curve 1000 1.2 50HZ A Zth(j-S) ℃/ W Zth(j-C) 0.8 500 0.4 0 0 0.001 t 0.01 0.1 1 10 S 100 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 100 Typ. A 75 125℃ max. 50 25℃ 25 IT 0 0 VTM 0.5 1.0 1.5 2.0 V 2.5 Fig5. Forward Characteristics Document Number: MSTC25 Sep.06,2013 www.smsemi.com 3 MSTC25 100 1/2·MSCT25 V 20V;20Ω 10 VGT 15 10 ∧ 1 PG(tp) -40℃ Tvj 25℃ 50 W (8 0W (0 .5 m m 0W (0 .1 m s) s) s) 125℃ VG 0.1 1.1 VGD125℃ IGT IGD125℃ 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: T1 × Dimensions in mm Document Number: MSTC25 Sep.06,2013 www.smsemi.com 4