NX5P2190
Logic controlled high-side power switch
Rev. 1.1 — 15 January 2015
Product data sheet
1. General description
The NX5P2190 is an advanced power switch with adjustable current limit. It includes
under-voltage and over-voltage lockout, over-current, over-temperature, reverse bias and
in-rush current protection circuits. These circuits are designed to isolate a voltage source
from a VBUS interface pin automatically when a fault occurs. The device features two
power switch terminals, one input (VINT) and one output (VBUS). A current limit input
(ILIM) defines the over-current and in-rush current limit, and a voltage detect output
(VDET) monitors the voltage level on VBUS. An open-drain fault output (FAULT) indicates
when a fault condition occurs. An enable input (EN) controls the state of the switch. When
EN is set LOW the device enters a low-power mode, disabling all protection circuits
except the under-voltage lockout. The low-power mode can be entered at anytime unless
the over temperature protection circuit has been triggered.
Designed for operation from 3 V to 5.5 V, the NX5P2190 is a complete solution for power
domain isolation and protection applications. The enable input includes integrated logic
level translation making the device compatible with lower voltage processors and
controllers.
2. Features and benefits
Wide supply voltage range from 3 V to 5.5 V
30 V tolerant on VBUS
ISW maximum 2 A continuous current
Very low ON resistance: 100 m (maximum) at a supply voltage of 4.0 V
Low-power mode (ground current 20 A typical)
1.8 V control logic
Soft start turn-on slew rate
Protection circuitry
Over-temperature protection
Over-current protection with low current output mode
Reverse bias current/Back drive protection
Over-voltage lockout
Under-voltage lockout
Analog voltage limited VBUS monitor path
ESD protection:
HBM JDS-001 Class 2 exceeds 2 kV
IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUS
Specified from 40 C to +85 C
NX5P2190
NXP Semiconductors
Logic controlled high-side power switch
3. Applications
USB OTG applications
4. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
NX5P2190UK
40 C to +85 C
Description
Version
WLCSP9 wafer level chip-scale package; 9 bumps;
body 1.36 x 1.36 x 0.51 mm. (Backside coating included)
NX5P2190UK
5. Marking
Table 2.
Marking codes
Type number
Marking code
NX5P2190UK
NX5PC
6. Functional diagram
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Logic symbol
NX5P2190
Product data sheet
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Rev. 1.1 — 15 January 2015
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NX5P2190
NXP Semiconductors
Logic controlled high-side power switch
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Logic diagram (simplified schematic)
7. Pinning information
7.1 Pinning
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Fig 3.
Pin configuration WLCSP9 package
NX5P2190
Product data sheet
DDD
Fig 4.
Ball mapping for WLCSP9
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NXP Semiconductors
Logic controlled high-side power switch
7.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
VINT
A1, B1
internal circuitry voltage I
VBUS
A3, B3
external connector voltage O
EN
C1
enable input (active HIGH) I
ILIM
C3
current limiter I/O
VDET
A2
VBUS voltage level indicator O
FAULT
B2
fault condition indicator (open-drain; active LOW)
GND
C2
ground (0 V)
8. Functional description
Table 4.
Function table[1]
EN
VINT
VBUS
FAULT Operation mode
X
0V
Z
L
No supply
X
0V
< 30 V
Z
Disabled; switch open
X
< 3.2 V
Z
L
Under-voltage lockout; switch open
H
> 5.5 V
Z
L
Over-voltage lockout; switch open
H
3.2 V to 5.5 V
Z
L
Over-temperature; switch open
L
3.2 V to 5.5 V
Z
Z
Disabled; switch open
H
3.2 V to 5.5 V
VBUS = VINT
Z
Enabled; switch closed; active
H
3.2 V to 5.5 V
0 V to VINT
L
Over-current; Switch open; constant current on VBUS
H
3.2 V to 5.5 V
0 V to VINT
L
When ILIM is connected to GND, VBUS is default
supplied with 10 mA current source
H
3.2 V to 5.5 V
VINT + 30 mV < VBUS < VINT +
0.45 V (> 4 ms)
L
Reverse bias current/back drive; switch open
H
3.2 V to 5.5 V
VBUS > VINT + 0.45 V
L
Reverse bias current/back drive; switch open
[1]
H = HIGH voltage level; L = LOW voltage level, Z = high-impedance OFF-state, X = Don’t care.
Table 5.
Function table VDET versus VBUS[1]
VBUS
VDET
3 V < VBUS < 30 V
1.5 < VDET < 5.5 V VDET detects VBUS voltage
[1]
Operation mode
See Figure 22.
NX5P2190
Product data sheet
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Rev. 1.1 — 15 January 2015
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Logic controlled high-side power switch
8.1 EN input
If EN is set LOW, the N-channel MOSFET is disabled, the FAULT output is set
HIGH-impedance and the device enters low-power mode. In low-power mode, all
protection circuits are disabled except the under-voltage lockout circuit. If EN is set HIGH,
all protection circuits are reactivated. If no fault conditions exist and an RILIM current limit
resistor is detected, the N-channel MOSFET is enabled.
8.2 Under-voltage lockout (UVLO)
The UVLO circuit is active until VINT > 3.2 V. It disables the N-channel MOSFET, sets the
FAULT output LOW and returns the device to low-power mode. The EN pin does not affect
the UVLO circuit. Once VINT > 3.2 V, the EN pin controls the N-channel MOSFET state.
The UVLO circuit remains active in low-power mode.
8.3 Over-voltage lockout (OVLO)
If EN is set HIGH and VINT > 5.9 V, the OVLO circuit is active. It disables the N-channel
MOSFET and sets the FAULT output LOW. In low-power mode, the OVLO circuit is
disabled and does not change the FAULT output state. If the OVLO circuit is active, setting
the EN pin LOW returns the device to low-power mode.
8.4 ILIM
The over-current protection circuit's (OCP) trigger value Iocp, is set using an external
resistor connected to the ILIM pin (see Figure 6). If EN is set HIGH and the ILIM pin is
grounded, the device is in over-current. The N-channel MOSFET is disabled, the FAULT
output is set LOW and VBUS supplied by the 10 mA current source.
8.5 Over-current protection (OCP)
When the current through the N-channel MOSFET exceeds Iocp for 20 s or VBUS < VINT
200 mV, the device is in over-current. The OCP circuit disables the N-channel MOSFET
within 2 s, sets the FAULT output LOW and supplies VBUS from the 10 mA current
source. The OCP circuit is automatically reset when VINT > VBUS > VINT 200 mV for
20 s. The N-channel MOSFET assumes the state defined by EN, the 10 mA current
source is disconnected and the FAULT output is set HIGH-impedance. If the OCP circuit is
active, setting the EN pin LOW returns the device to low-power mode.
8.6 Over-temperature protection (OTP)
If EN is set HIGH and the device temperature exceeds 125 °C, the device is in over
temperature. The OTP circuit disables the N-channel MOSFET and sets the FAULT
output LOW. Transitions on the EN pin have no effect. Once its temperature decreases to
below 115 °C the device returns to the defined state. The OTP circuit is disabled in
low-power mode.
NX5P2190
Product data sheet
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Rev. 1.1 — 15 January 2015
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Logic controlled high-side power switch
8.7 Reverse bias current/back drive protection (RCP)
The reverse bias current protection circuit can only be triggered when EN is set HIGH. If
VBUS > (VINT + 30 mV) for longer than 4 ms; or VBUS > (VINT + 0.45 V) the device is in
reverse bias. The RCP circuit disables the N-channel MOSFET and sets the FAULT
output LOW. Once VBUS < VINT for longer than 4 ms the device returns to the defined
state. If the RCP circuit is active, setting the EN pin LOW returns the device to low-power
mode.
8.8 FAULT output
The FAULT output is an open-drain output that requires an external pull-up resistor. If any
of the UVLO, OVLO, RCP, OCP or OTP circuits is activated, the FAULT output is set LOW
to indicate that a fault has occurred. The FAULT output returns to the high impedance
state automatically once the fault condition is removed.
8.9 VDET output
VDET is an analog output that allows a controller to monitor the voltage level on VBUS.
8.10 In-rush current protection
When the N-channel MOSFET is enabled, the in-rush current protection circuit clamps the
switch current until VBUS = VINT 200 mV. The resistor connected to ILIM sets the clamp
current. The in-rush current protection circuit is disabled in low-power mode.
NX5P2190
Product data sheet
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Rev. 1.1 — 15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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Logic controlled high-side power switch
9. Application diagram
The NX5P2190 typically connects a voltage source on VINT to the VBUS of a battery
operated device. The external resistor RILIM sets the maximum current limit threshold. The
FAULT output is open-drain. It requires an external pull-up resistor.
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Fig 5.
NX5P2190
Product data sheet
NX5P2190 application diagram
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NXP Semiconductors
Logic controlled high-side power switch
10. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
input voltage
VI
Conditions
Min
Max
Unit
VBUS
[1]
0.5
+32
V
VINT
[1]
0.5
+6.5
V
[2][3]
0.5
VINT + 0.5
V
EN, ILIM
VO
output voltage
FAULT
0.5
+6.0
V
IIK
input clamping current
EN: VI < 0.5 V
50
-
mA
ISK
switch clamping current
VBUS; VINT; VI < 0.5 V
50
-
mA
ISW
switch current
Tamb = 85 °C
-
2000
mA
Tj(max)
maximum junction
temperature
40
+125
C
Tstg
storage temperature
65
+150
C
Ptot
total power dissipation
-
400
mW
[1]
[4]
The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.
[2]
The minimum input voltage rating may be exceeded if the input current rating is observed.
[3]
The maximum input voltage should not exceed +6.5 V.
[4]
The (absolute) maximum power dissipation depends on the junction temperature Tj. Higher power dissipation is allowed at lower
ambient temperatures. The conditions to determine the specified values are Tamb = 85 C and the use of a two layer PCB.
11. Recommended operating conditions
Table 7.
Recommended operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VI
input voltage
VINT
3.0
5.5
V
EN, ILIM
0
VINT
V
VBUS; EN = LOW
0
30
V
40
+85
C
VO
output voltage
Tamb
ambient temperature
12. Thermal characteristics
Table 8.
Symbol
Rth(j-a)
[1]
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to ambient
[1]
Typ
Unit
82
K/W
Rth(j-a) is dependent upon board layout. To minimize Rth(j-a), ensure that all pins have a solid connection to larger copper layer areas. In
multi-layer PCBs, the second layer should be used to create a large heat spreader area below the device. Avoid using solder-stop
varnish under the device.
NX5P2190
Product data sheet
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Rev. 1.1 — 15 January 2015
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Logic controlled high-side power switch
13. Static characteristics
Table 9.
Static characteristics
VI(VINT) = 4.0 V to 5.5 V; unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Tamb = 25 C
Conditions
Tamb = 40 C to +85 C Unit
Min
Typ[1]
Max
Min
Max
VIH
HIGH-level input
voltage
EN input
1.2
-
-
1.2
-
V
VIL
LOW-level input
voltage
EN input
-
-
0.4
-
0.4
V
VO
output voltage
VDET; IVDET = 2 mA;
3 V < VBUS < 30 V
1.5
-
5.5
1.5
5.5
V
VOL
LOW-level output
voltage
FAULT, IO = 8 mA
-
-
0.5
-
0.5
V
IO
output current
Current source
-
10
-
8
15
mA
EN = HIGH; FAULT = Hi-Z
-
-
Iocp
-
Iocp
mA
2000
-
-
mA
Iocp
overcurrent
protection current
EN = HIGH; see Figure 6
200
-
Rpu
pull-up resistance
FAULT
20
-
200
-
-
k
Vpu
pull-up voltage
FAULT
-
-
VINT
-
VINT
V
RILIM
current limit
resistance
ILIM
20
-
300
20
300
k
IGND
ground current
VBUS open; EN = LOW;
see Figure 7 and Figure 8
-
20
-
-
40
A
VBUS open; EN = HIGH;
see Figure 7 and Figure 8
-
220
-
-
360
A
IOFF
power-off leakage
current
VBUS = 0 V to 30 V;
VINT = 0 V; see Figure 9
[2]
-
2
-
-
20
A
IS(OFF)
OFF-state leakage
current
VBUS = 0 V to 30 V;
see Figure 10 and Figure 11
[2]
-
2
-
-
20
A
VUVLO
undervoltage lockout
voltage
3.0
3.2
3.4
3.0
3.4
V
VOVLO
overvoltage lockout
voltage
5.5
5.9
6.25
5.5
6.25
V
-
150
-
-
-
mV
-
2
-
-
-
pF
-
-
1
-
1
nF
Vhys(OVLO) overvoltage lockout
hysteresis voltage
CI
input capacitance
CS(ON)
ON-state
capacitance
EN
[1]
Typical values are measured at Tamb = 25 C and VI(VINT) = 5.0 V.
[2]
Typical value is measured at Tamb = 25 C and VI(VBUS) = 5.0 V.
NX5P2190
Product data sheet
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Rev. 1.1 — 15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
9 of 20
NX5P2190
NXP Semiconductors
Logic controlled high-side power switch
13.1 Graphs
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Tamb = 25 C.
7DPE &
(1) Enabled
(1) Minimum
(2) Disabled
(2) Typical
(3) Maximum
Fig 6.
Typical overcurrent protection current versus
the external resistor value
Fig 7.
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(1) Tamb = 85 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 8.
Typical ground current versus input voltage
NX5P2190
Product data sheet
Fig 9.
Typical power-off leakage current versus input
voltage on pin VBUS
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NXP Semiconductors
Logic controlled high-side power switch
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(1) Tamb = 85 C
(1) VI(VBUS) = 5.0 V
(2) Tamb = 25 C
(2) VI(VBUS) = 10.0 V
(3) Tamb = 40 C
(3) VI(VBUS) = 15.0 V
Fig 10. Typical OFF-state leakage current versus input
voltage on pin VBUS
7DPE &
Fig 11. Typical OFF-state leakage current versus
temperature
13.2 ON resistance
Table 10. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V)
Symbol Parameter
RON
Tamb = 25 C
Conditions
Tamb = 40 C to +85 C Unit
Min
Typ
Max
Min
Max
-
60
-
-
100
ON resistance switch enabled; ILOAD = 200 mA;
see Figure 12, Figure 13 and Figure 14
VI(VINT) = 4.0 V to 5.5 V
m
13.3 ON resistance test circuit and waveforms
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RON = VSW / ILOAD.
Fig 12. Test circuit for measuring ON resistance
NX5P2190
Product data sheet
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Rev. 1.1 — 15 January 2015
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NXP Semiconductors
Logic controlled high-side power switch
DDD
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521
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7DPE &
(1) VI(VINT) = 5.5 V
(1) Tamb = 85 C
(2) VI(VINT) = 4.0 V
(2) Tamb = 25 C
9,17 9
(3) Tamb = 40 C
Fig 13. Typical ON resistance versus temperature
Fig 14. Typical ON resistance versus input voltage
14. Dynamic characteristics
Table 11. Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 16.
VI(VINT) = 4.0 V to 5.5 V.
Symbol
Parameter
Tamb = 25 C
Conditions
Tamb = 40 C to +85 C
Min
Typ
Max
Min
Max
Unit
ten
enable time
EN to VBUS; see Figure 15
-
0.24
-
0.16
-
ms
tdis
disable time
EN to VBUS; see Figure 15
-
1.5
-
-
-
ms
ton
turn-on time
EN to VBUS; see Figure 15
-
0.63
-
0.52
-
ms
toff
turn-off time
EN to VBUS; see Figure 15
-
34.5
-
-
-
ms
tTLH
LOW to HIGH
VBUS; see Figure 15
output transition
time
-
0.39
-
0.16
-
ms
tTHL
HIGH to LOW
VBUS; see Figure 15
output transition
time
-
33
-
-
-
ms
NX5P2190
Product data sheet
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Rev. 1.1 — 15 January 2015
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Logic controlled high-side power switch
14.1 Waveform and test circuits
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Measurement points are given in Table 12.
Logic level: VOH is the typical output voltage that occurs with the output load.
Fig 15. Switching times
Table 12.
Measurement points
Supply voltage
EN Input
Output
VI(VINT)
VM
VX
VY
4.0 V to 5.5 V
0.5 VI
0.9 VOH
0.1 VOH
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Test data is given in Table 13.
Definitions test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 16. Test circuit for measuring switching times
Table 13.
Test data
Supply voltage
Input
Load
VEXT
VI
CL
RL
4.0 V to 5.5 V
1.5 V
100 F
150
NX5P2190
Product data sheet
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Rev. 1.1 — 15 January 2015
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NXP Semiconductors
Logic controlled high-side power switch
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EN = 1.5 V; VINT = 4 V; RL = 150 ; CL = 220 F;
RILIM = 50 k; Tamb = 25 C.
EN = 1.5 V; VINT = 5.5 V; RL = 150 ; CL = 220 F;
RILIM = 50 k; Tamb = 25 C.
(1) EN
(1) EN
(2) VBUS
(2) VBUS
(3) II(VINT)
(3) II(VINT)
Fig 17. Typical enable time and in-rush current
DDD
Fig 18. Typical enable time and in-rush current
DDD
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EN = 1.5 V; VINT = 4 V; RL = 150 ; CL = 100 F;
Tamb = 25 C.
Fig 19. Typical enable time versus current limit
resistance (RILIM)
NX5P2190
Product data sheet
W PV
EN = 1.5 V; VINT = 4 V; RL = 150 ; CL = 100 F;
RILIM = 50 k; Tamb = 25 C.
Fig 20. Typical disable time
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Rev. 1.1 — 15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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NX5P2190
NXP Semiconductors
Logic controlled high-side power switch
DDD
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EN = 1.5 V; VINT = 5.5 V; RL = 150 ; CL = 100 F;
RILIM = 50 k; Tamb = 25 C.
Fig 21. Typical disable time
NX5P2190
Product data sheet
Fig 22. Typical VDET versus VBUS
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Rev. 1.1 — 15 January 2015
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Logic controlled high-side power switch
15. Package outline
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Fig 23. Package outline WLCSP9 package
NX5P2190
Product data sheet
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Rev. 1.1 — 15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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Logic controlled high-side power switch
P
P
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3, P
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Fig 24. Ball dimensions WLCSP9 package
16. Abbreviations
Table 14.
Abbreviations
Acronym
Description
CDM
Charged Device Model
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MOSFET
Metal-Oxide Semiconductor Field Effect Transistor
OCP
OverCurrent Protection
OTP
OverTemperature Protection
RCP
Reverse Current Protection
USB OTG
Universal Serial Bus On-The-Go
UVLO
Under-voltage lockout
VBUS
USB Power Supply
OVLO
Over-voltage lockout
17. Revision history
Table 15.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NX5P2190 v.1.1
20150115
Product data sheet
-
NX5P2190 v.1
Modifications:
NX5P2190 v.1
NX5P2190
Product data sheet
•
A text correction to the first paragraph on page 1.
20150113
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 15 January 2015
-
© NXP Semiconductors N.V. 2015. All rights reserved.
17 of 20
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18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
18.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
18.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
NX5P2190
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
18 of 20
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
NX5P2190
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
19 of 20
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20. Contents
1
2
3
4
5
6
7
7.1
7.2
8
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
8.10
9
10
11
12
13
13.1
13.2
13.3
14
14.1
15
16
17
18
18.1
18.2
18.3
18.4
19
20
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 4
EN input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Under-voltage lockout (UVLO) . . . . . . . . . . . . . 5
Over-voltage lockout (OVLO) . . . . . . . . . . . . . . 5
ILIM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Over-current protection (OCP) . . . . . . . . . . . . . 5
Over-temperature protection (OTP) . . . . . . . . . 5
Reverse bias current/back drive protection
(RCP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
FAULT output . . . . . . . . . . . . . . . . . . . . . . . . . . 6
VDET output . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
In-rush current protection . . . . . . . . . . . . . . . . . 6
Application diagram . . . . . . . . . . . . . . . . . . . . . 7
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8
Recommended operating conditions. . . . . . . . 8
Thermal characteristics . . . . . . . . . . . . . . . . . . 8
Static characteristics. . . . . . . . . . . . . . . . . . . . . 9
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . 11
ON resistance test circuit and waveforms . . . 11
Dynamic characteristics . . . . . . . . . . . . . . . . . 12
Waveform and test circuits . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 15 January 2015
Document identifier: NX5P2190