ON NTMFS5C430NL Power mosfet Datasheet

NTMFS5C430NL
Power MOSFET
40 V, 1.4 mW, 200 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
200
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Steady
State
PD
ID
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 15 A)
Single Pulse Drain−to−Source Voltage
(tp = 10 ms)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
200 A
2.2 mW @ 4.5 V
D (5)
W
110
A
38
G (4)
27
PD
TA = 100°C
TA = 25°C, tp = 10 ms
1.4 mW @ 10 V
40 V
53
TA = 100°C
TA = 25°C
ID MAX
140
TC = 100°C
TA = 25°C
RDS(ON) MAX
S (1,2,3)
W
3.8
N−CHANNEL MOSFET
1.9
IDM
900
A
TJ, Tstg
−55 to
+175
°C
IS
120
A
EAS
493
mJ
VDSM
48
V
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING
DIAGRAM
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
5C430L
AYWZZ
D
D
5C430L = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
1.4
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
40
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 2
1
Publication Order Number:
NTMFS5C430NL/D
NTMFS5C430NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
1.3
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.6
VGS = 10 V
ID = 50 A
1.2
1.4
VGS = 4.5 V
ID = 50 A
1.7
2.2
gFS
VDS = 15 V, ID = 50 A
V
mV/°C
180
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
4300
VGS = 0 V, f = 1 MHz, VDS = 20 V
1900
pF
72
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
32
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
70
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
7.0
nC
12
VGS = 4.5 V, VDS = 20 V; ID = 50 A
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
9.0
2.9
td(ON)
15
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 1.0 W
tf
140
ns
31
9
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.81
TJ = 125°C
0.68
tRR
ta
tb
1.2
V
61
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 50 A
QRR
29
ns
32
80
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C430NL
TYPICAL CHARACTERISTICS
280
280
VDS = 5 V
3.4 V
3.6 V to
10 V
240
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
240
200
3.2 V
160
120
3.0 V
80
2.8 V
40
2.6 V
200
160
120
40
0
TJ = −55°C
TJ = 125°C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
1
2
2.5
3
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
TJ = 25°C
ID = 50 A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, GATE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
TJ = 25°C
80
4
3.0
TJ = 25°C
2.5
2.0
VGS = 4.5 V
1.5
VGS = 10 V
1.0
0.5
0
20
60
100
140
180
220
260
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 10 V
ID = 50 A
TJ = 175°C
1.7
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
100000
1.9
1.5
1.3
1.1
10000
TJ = 125°C
1000
TJ = 85°C
100
0.9
0.7
−50
−25
0
25
50
75
100
125
150
175
10
0
10
20
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5C430NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10000
C, CAPACITANCE (pF)
CISS
10
COSS
1000
CRSS
100
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
0
10
20
30
40
6
QGD
QGS
4
VDS = 20 V
TJ = 25°C
ID = 50 A
2
0
0
10
20
30
40
50
60
70
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100.0
IS, SOURCE CURRENT (A)
tr
tf
100.0
t, TIME (ns)
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000.0
td(on)
td(off)
10.0
VGS = 4.5 V
VDD = 20 V
ID = 50 A
1.0
TJ = 125°C
10.0
TJ = 25°C
TJ = −55°C
1.0
1
10
0.4
100
1
0.1
0.1
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
100
TJ = 25°C
TC = 25°C
VGS ≤ 10 V
Single Pulse
IPEAK, (A)
10
0.5
RG, GATE RESISTANCE (W)
1000
ID, DRAIN CURRENT (A)
QT
500 ms
TJ = 100°C
10
1 ms
RDS(on) Limit
Thermal Limit
Package Limit
10 ms
1
1
10
100
1E−4
1E−3
10E−2
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFS5C430NL
TYPICAL CHARACTERISTICS
100
RqJA (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5C430NLT1G
5C430L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5C430NLT3G
5C430L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5C430NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
0.10 C
SIDE VIEW
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
2X
0.10
b
C A B
0.05
c
0.495
8X
MILLIMETERS
MIN
NOM
MAX
1.10
0.90
1.00
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15
5.00
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.15
6.00
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
4.560
2X
1.530
e/2
e
L
1
4
3.200
K
4.530
E2
PIN 5
(EXPOSED PAD)
L1
M
1.330
2X
0.905
1
G
0.965
D2
4X
1.000
4X 0.750
BOTTOM VIEW
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS5C430NL/D