ON CM1293A-04SO 4-channel low capacitance esd protection array Datasheet

CM1293A-04SO
4-Channel
Low Capacitance
ESD Protection Array
Product Description
CM1293A−04SO has been designed to provide ESD protection for
electronic components or subsystems requiring minimal capacitive
loading. This device is ideal for protecting systems with high data and
clock rates or for circuits requiring low capacitive loading. Each ESD
channel consists of a pair of diodes in series that steer the positive or
negative ESD current pulse to either the positive (VP) or negative (VN)
supply rail. A Zener diode is embedded between VP and VN which
helps protect the VCC rail against ESD strikes. This device protects
against ESD pulses up to 8 kV contact discharge) per the
IEC 61000−4−2 Level 4 standard.
This device is particularly well−suited for protecting systems using
high−speed ports such as USB2.0, IEEE1394 (FireWire, i.LINKt),
Serial ATA, DVI, HDMI, and corresponding ports in removable
storage, digital camcorders, DVD−RW drives and other applications
where extremely low loading capacitance with ESD protection are
required in a small package footprint.
Features
http://onsemi.com
SC−74
SO SUFFIX
CASE 318F
BLOCK DIAGRAM
VP
CH1
CH2
CH3
CH4
VN
CM1293A−04SO
MARKING DIAGRAM
 Four Channels of ESD Protection
 Provides ESD Protection to IEC61000−4−2
8 kV Contact Discharge
Low Loading Capacitance of 2.0 pF Max
Low Clamping Voltage
Channel I/O to I/O Capacitance 1.5 pF Typical
Zener Diode Protects Supply Rail and Eliminates the Need for
External By−Pass Capacitors
Each I/O Pin Can Withstand over 1000 ESD Strikes*
This Device is Pb−Free and is RoHS Compliant**







Applications
 DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs,



LCD Displays
Serial ATA Ports in Desktop PCs and Hard Disk Drives
PCI Express Ports
General Purpose High−Speed Data Line ESD Protection
XXXMG
G
1
XXX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
CM1293A−04SO
SC−74
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
**Standard test condition is IEC61000−4−2 level 4 test circuit with each pin
subjected to 8 kV contact discharge for 1000 pulses. Discharges are timed at
1 second intervals and all 1000 strikes are completed in one continuous test run.
The part is then subjected to standard production test to verify that all of the
tested parameters are within spec after the 1000 strikes.
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 0
1
Publication Order Number:
CM1293A−04SO/D
CM1293A−04SO
PACKAGE/PINOUT DIAGRAM
Table 1. PIN DESCRIPTIONS
Name
Type
1
CH1
I/O
Description
2
VN
GND
3
CH2
I/O
ESD Channel
4
CH3
I/O
ESD Channel
5
VP
PWR
6
CH4
I/O
Top View
ESD Channel
CH1
Negative Voltage Supply Rail
CH4
635
Pin
VN
VP
CH2
CH3
4−Channel SC−74
Positive Voltage Supply Rail
ESD Channel
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
6.0
V
Operating Temperature Range
–40 to +85
C
Storage Temperature Range
–65 to +150
C
(VN − 0.5) to (VP + 0.5)
V
Operating Supply Voltage (VP − VN)
DC Voltage at any Channel Input
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Package Power Rating
Rating
Units
–40 to +85
C
225
mW
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
3.3
5.5
V
8.0
mA
VP
Operating Supply Voltage (VP−VN)
IP
Operating Supply Current
(VP−VN) = 3.3 V
VF
Diode Forward Voltage
IF = 8 mA, TA = 25C
0.90
Channel Leakage Current
TA = 25C, VP = 5 V, VN = 0 V
0.1
Channel Input Capacitance
At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V
ILEAK
CIN
DCIO
Channel I/O to I/O Capacitance
VESD
ESD Protection
Peak Discharge Voltage at any
Channel Input, in System
Contact Discharge per
IEC 61000−4−2 Standard
1.5
Units
V
1.0
mA
2.0
pF
pF
kV
TA = 25C (Notes 2 and 3)
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
TA = 25C, IPP = 1A, tP = 8/20 mS
(Note 3)
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
TA = 25C, IPP = 1A, tP = 8/20 mS
(Note 3)
1. All parameters specified at TA = –40C to +85C unless otherwise noted.
2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded.
3. These measurements performed with no external capacitor on VP.
http://onsemi.com
2
8
+9.9
–1.6
0.96
0.5
V
W
CM1293A−04SO
PERFORMANCE INFORMATION
Input Channel Capacitance Performance Curves
Figure 1. Typical Variation of CIN vs. VIN
(f = 1 MHz, VP = 3.3 V, VN = 0 V, 0.1 F Chip Capacitor between VP and VN, 255C)
Figure 2. Typical Variation of CIN vs. Temp
(f = 1 MHz, VIN = 30 mV, VP = 3.3 V, VN = 0 V, 0.1 F Chip Capacitor between VP and VN)
http://onsemi.com
3
CM1293A−04SO
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (nominal conditions unless specified otherwise, 50 Environment)
Figure 3. Insertion Loss (S21) vs. Frequency (0 V DC Bias, VP = 3.3 V)
Figure 4. Insertion Loss (S21) vs. Frequency (2.5 V DC Bias, VP = 3.3 V)
http://onsemi.com
4
CM1293A−04SO
APPLICATION INFORMATION
Design Considerations
In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to minimize parasitic
series inductances on the Supply/Ground rails as well as the signal trace segment between the signal input (typically a
connector) and the ESD protection device. Refer to Figure 5, which illustrates an example of a positive ESD pulse striking an
input channel. The parasitic series inductance back to the power supply is represented by L1 and L2. The voltage VCL on the
line being protected is:
VCL = Fwd voltage drop of D1 + VSUPPLY + L1 x d(IESD) / dt+ L2 x d(IESD) / dt
where IESD is the ESD current pulse, and VSUPPLY is the positive supply voltage.
An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact discharge
per the IEC61000−4−2 standard results in a current pulse that rises from zero to 30 Amps in 1 ns. Here d(IESD)/dt can be
approximated by DIESD/Dt, or 30/(1x10−9). So just 10 nH of series inductance (L1 and L2 combined) will lead to a 300 V
increment in VCL!
Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to drastically
increased negative voltage on the line being protected.
The CM1293 has an integrated Zener diode between VP and VN. This greatly reduces the effect of supply rail inductance
L2 on VCL by clamping VP at the breakdown voltage of the Zener diode. However, for the lowest possible VCL, especially when
VP is biased at a voltage significantly below the Zener breakdown voltage, it is recommended that a 0.22 F ceramic chip
capacitor be connected between VP and the ground plane.
As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected
electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the VP pin of the Protection
Array as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the
ESD device to minimize stray series inductance.
L2
VP
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
D1
0.22 mF
D2
ONE
CHANNEL
POSITIVE SUPPLY RAIL
VCC
PATH OF ESD CURRENT PULSE IESO
LINE BEING
PROTECTED
L1
CHANNEL
INPUT
25 A
0A
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
SYSTEM OR
CIRCUITRY
BEING
PROTECTED
VCL
GROUND RAIL
VN
CHASSIS GROUND
Figure 5. Application of Positive ESD Pulse between Input Channel and Ground
http://onsemi.com
5
CM1293A−04SO
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW
STANDARD 318F−05.
D
6
HE
1
5
4
2
3
E
DIM
A
A1
b
c
D
E
e
L
HE
b
e
0.05 (0.002)
C
A
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
FireWire is a registered trademark of Apple Computer, Inc.
i.LINK is a trademark of Sony Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
CM1293A−04SO/D
Similar pages