CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 1/9 -30V P-Channel Enhancement Mode MOSFET MTB050P03KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-4A RDSON@VGS=-4.5V,ID=-3A Features -30V -3.8A 51.3mΩ(typ) 67.5mΩ(typ) • For load switch application only • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD protected gate , HBM≥5kV • Pb-free lead plating package Symbol Outline SOT-23 MTB050P03KN3 D S G：Gate S：Source D：Drain G Ordering Information Device MTB050P03KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTB050P03KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=-10V (Note 4) Continuous Drain Current @ TA=70°C, VGS=-10V (Note 4) Pulsed Drain Current (Notes 1, 2) ESD susceptibility (Note 3) Maximum Power Dissipation Linear Derating Factor (Note 4) Operating Junction and Storage Temperature Range Symbol VDS VGS Unit IDM VESD PD Limits -30 ±20 -3.8 -3.0 -14.8 5000 1.38 Tj ; Tstg 0.01 -55~+150 W/°C °C ID V A V W Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Human body model, 1.5kΩ in series with 100pF 4. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Thermal Performance Parameter Symbol Limit Thermal Resistance, Junction-to-Ambient(PCB mounted) RθJA 90 Thermal Resistance, Junction-to-Case RθJA 45 Unit °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) Min. Typ. Max. Unit -30 -1 - 0.03 51.3 67.5 5.4 -2.5 ±20 -1 -10 68 88 - V V/°C V -0.79 10.6 5.5 -1 - V ns nC *GFS Source-Drain Diode *VSD Trr Qrr - μA mΩ S Test Conditions VGS=0V, ID=-250μA Reference to 25°C, ID=-250μA VDS=VGS, ID=-250μA VGS=±16V, VDS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V (Tj=70°C) VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VDS=-10V, ID=-3A VGS=0V, IS=-1A VGS=0V, IF=-4A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTB050P03KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 3/9 Recommended Soldering Footprint MTB050P03KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.2 -VGS=10V, 9V, 8V, 7V, 6V,5V,4V 16 -ID, Drain Current (A) -BVDSS, Normalized Drain-Source Breakdown Voltage 20 3.5V 12 8 -VGS=3V 4 1.1 1 0.9 ID=-250μA, VGS=0V 0.8 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.4 100 -VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) 1000 -VGS=4.5V -VGS=10V VGS=0V 1.2 Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 0.2 10 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 2 4 6 8 -IDR, Reverse Drain Current (A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 400 1.8 R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 360 320 280 240 200 ID=-4A 160 120 ID=-3A 80 1.6 VGS=-10V, ID=-4A 1.4 1.2 1 0.8 RDS(ON) @Tj=25°C : 51.3 mΩ typ. 0.6 0.4 40 0 MTB050P03KN3 1 2 3 4 5 6 -VGS, Gate-Source Voltage(V) 7 8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Maximum Safe Operating Area 1.4 100 1.2 ID=-1mA 1 0.8 ID=-250μA 0.6 10 -I D, Drain Current (A) -VGS(th) , Normalized Threshold Voltage Threshold Voltage vs Junction Tempearture RDS(ON) Limited 1ms 1 10ms 1s DC 0.01 -75 -50 -25 0 25 50 75 100 125 150 175 0.01 Tj, Junction Temperature(°C) Maximum Drain Current vs JunctionTemperature 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 Typical Transfer Characteristics 20 4.5 -VDS=10V 4 16 3.5 -I D, Drain Current (A) -I D, Maximum Drain Current(A) 100ms TA=25°C, Tj=150°C, VGS=-10V, RθJA=90°C/W Single Pulse 0.1 0.4 3 2.5 2 1.5 1 TA=25°C, VGS=-10V, RθJA=90°C/W 12 8 4 0.5 0 0 25 50 75 100 125 Tj, Junction Temperature(°C) 150 0 175 Forward Transfer Admittance vs Drain Current 1 2 3 4 -VGS, Gate-Source Voltage(V) 50 TJ(MAX) =150°C TA=25°C RθJA=90°C/W 40 Power (W) 1 0.1 MTB050P03KN3 30 20 VDS=-10V 10 Pulsed Ta=25°C 0.01 0.001 5 Single Pulse Power Rating, Junction to Ambient (Note 1 on page 2) 10 GFS , Forward Transfer Admittance(S) 100μs 0.01 0.1 1 -ID, Drain Current(A) 10 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 CYStek Product Specification Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Power Derating Curve 1.6 PD, Power Dissipation(W) 1.4 Mounted on FR-4 board with 1 in² pad area 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 1 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=90 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1.E-04 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTB050P03KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB050P03KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB050P03KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 9/9 SOT-23 Dimension Marking: TE B5PT Device Code XX Date Code 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain Inches Min. Max. 0.1102 0.1204 0.0472 0.0551 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.40 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1004 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.55 0.25 0.65 0.30 0.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB050P03KN3 CYStek Product Specification