DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS NEW PRODUCT ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C 9.5mΩ @ VGS = 10V 10.8A 12mΩ @ VGS = 4.5V 9.6 100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Ensures On State Losses Are Minimized Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) making it ideal for high-efficiency power management applications. Power Management Functions DC-DC Converters Backlighting D SO-8 S D S D S D G D G S Top View Internal Schematic Top View Equivalent circuit Ordering Information (Note 4) Part Number DMT6009LSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking T6009LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 15 = 2015) WW = Week (01 to 53) T6009LS YY WW 1 DMT6009LSS Document number: DS38289 Rev. 1 - 2 4 1 of 6 www.diodes.com October 2015 © Diodes Incorporated DMT6009LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCE INFORMATION Steady State Continuous Drain Current (Note 6) VGS = 10V t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 60 ±20 10.8 8.6 ID A 14.4 11.5 3 60 25 31.5 A A A mJ Value 1.25 100 55.5 1.6 75 42 12 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH Units V V IS IDM IAS EAS A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s RJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RJA RJC TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 48V, VGS = 0V VGS = ±16V, VDS = 0V VGS(TH) RDS (ON) VSD 7.2 9 0.9 2 9.5 12 1.2 V Static Drain-Source On-Resistance 0.7 - VDS = VGS, ID = 250μA VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 11.5A VGS = 0V, IS = 20A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR - 1,925 438 41 1.7 33.5 15.6 4.7 5.3 4.5 8.6 35.9 15.7 18.2 33.1 - Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 13.5A ns VDD = 30V, VGS = 10V, RG = 6Ω, ID = 13.5A ns nC IF = 13.5A, di/dt = 400A/μs 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT6009LSS Document number: DS38289 Rev. 1 - 2 2 of 6 www.diodes.com October 2015 © Diodes Incorporated DMT6009LSS 30.0 30 VDS = 5V 25 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS = 4.0V 20.0 VGS = 3.5V 15.0 VGS = 3.0V 10.0 5.0 20 15 125oC 25oC 150oC 5 VGS = 2.5V -55oC 0 0 0.5 1 1.5 2 2.5 3 1 0.01 0.0095 0.009 VGS = 4.5V 0.0085 0.008 0.0075 0.007 VGS = 10V 0.0065 0.006 2 6 10 14 18 22 26 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85oC 10 0.0 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.08 0.06 0.04 ID = 13.5A 0.02 0 0 4 VGS = 10V 0.013 0.012 175oC 150oC 0.011 125oC 0.01 0.009 85oC 0.008 0.007 25oC 0.006 -55oC 0.005 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.014 4 0.1 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCE INFORMATION VGS = 10.0V 1.8 1.6 VGS = 4.5V, ID = 11.5A 1.4 1.2 1 0.8 0.6 0.004 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMT6009LSS Document number: DS38289 Rev. 1 - 2 3 of 6 www.diodes.com -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 6. On-Resistance Variation with Junction Temperature October 2015 © Diodes Incorporated 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.02 0.016 0.012 0.008 VGS = 10V, ID = 13.5A 0.004 0 -50 -25 0 25 50 75 100 125 150 1.6 ID = 1mA 1.2 ID = 250µA 0.8 0.4 -50 -25 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) 10000 VGS = 0V CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 0 Figure 8. Gate Threshold Variation vs. Junction Temperature 30 25 20 TJ = 125oC 15 10 TJ = 85oC TJ = 25oC TJ = 150oC 5 TJ = -55oC f=1MHz Ciss 1000 Coss 100 Crss 10 0 0 0.3 0.6 0.9 1.2 0 1.5 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 100 10 PW =100µs RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) NEW PRODUCT ADVANCE INFORMATION DMT6009LSS 6 4 VDS = 30V, ID = 13.5A 10 1 0 7 14 21 28 35 0.1 0.01 0.01 Qg (nC) Figure 11. Gate Charge DMT6009LSS Document number: DS38289 Rev. 1 - 2 PW =10ms PW =100ms PW =1s 2 0 PW =1ms TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= 10V 0.1 1 PW =10s DC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 6 www.diodes.com October 2015 © Diodes Incorporated DMT6009LSS r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 98℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version 0.254 NEW PRODUCT ADVANCE INFORMATION 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMT6009LSS Document number: DS38289 Rev. 1 - 2 5 of 6 www.diodes.com October 2015 © Diodes Incorporated DMT6009LSS IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMT6009LSS Document number: DS38289 Rev. 1 - 2 6 of 6 www.diodes.com October 2015 © Diodes Incorporated