High Chip Ferrite Bead The current rating up to 6 Amps with low DCR Combination of high frequency noise suppression with capability of handing high current High current DC power lines Circuits where a stable ground in unavailable Filtering between analog and digital circuitry,clock generation between circuitry,I/O RF noisy interconnects,isolation circuits and logic devices susceptible to functional degradation,power supply filtering to prevent conducted RF energy from corrupting the power generation circuitry,high frequency EMI prevention of computer, printers, VCRs, TVs and portable telephones Operating temperature range : - 55℃ ~ +125℃ Storage Condition : Less than 40℃ and 70% RH Storage Time: 6 months(Size:1005) 12 months(Size:1608 above) Soldering method: Reflow or Wave Soldering Unit：mm Type 1005 1608 2012 3216 3225 4516 4532 (EIA 0402) (EIA 0603) (EIA 0805) (EIA 1206) (EIA 1210) (EIA 1806) (EIA 1812) L 1.00±0.10 1.60±0.15 2.00±0.20 3.20±0.20 3.20±0.20 4.50±0.25 4.50±0.25 W 0.50±0.10 0.80±0.15 1.25±0.20 1.60±0.20 2.50±0.20 1.60±0.20 3.20±0.25 T 0.50±0.10 0.80±0.15 0.90±0.20 1.10±0.20 1.30±0.20 1.60±0.20 1.50±0.25 E 0.25±0.10 0.30±0.20 0.50±0.30 0.50±030 0.50±030 0.60±0.40 0.60±0.40 Revision December 18, 2015 1/6 @ UN Semiconductor Co., Ltd. 2015 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. High Chip Ferrite Bead MHC 1608 S 12 1 P B P 1 2 3 4 5 6 7 8 Impedance(Ω) +/-25% Test Freq.(MHz) DCR(Ω) (Max.) Rated Current (mA) MHC1005S100NBP 10 100 0.09 2000 MHC1005S300NBP 30 100 0.09 2000 MHC1005S600LBP 60 100 0.20 1000 MHC1005S121MBP 120 100 0.15 1500 MHC1608S300QBP 30 100 0.04 3000 MHC1608S600QBP 60 100 0.04 3000 MHC1608S800QBP 80 100 0.04 3000 MHC1608S121PBP 120 100 0.07 2500 MHC1608S221NBP 220 100 0.09 2000 MHC1608S301NBP 300 100 0.09 2000 MHC1608S451MBP 450 100 0.15 1500 MHC1608S471LBP 470 100 0.20 1000 MHC1608S601LBP 600 100 0.20 1000 Part No. MHC1005 Series MHC1608 Series Revision December 18, 2015 2/6 @ UN Semiconductor Co., Ltd. 2015 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. High Chip Ferrite Bead Impedance(Ω) +/-25% Test Freq.(MHz) DCR(Ω) (Max.) Rated Current (mA) MHC2012S310WBP 31 100 0.015 6000 MHC2012S400RBP 40 100 0.03 4000 MHC2012S600QBP 60 100 0.04 3000 MHC2012S800UBP 80 100 0.02 5000 MHC2012S121UBP 120 100 0.02 5000 MHC2012S221QBP 220 100 0.04 3000 MHC2012S301NBP 300 100 0.09 2000 MHC2012S331NBP 330 100 0.09 2000 MHC2012S601NBP 600 100 0.09 2000 MHC3216S300WBE 30 100 0.015 6000 MHC3216S500WBE 50 100 0.015 6000 MHC3216S800RBE 80 100 0.03 4000 MHC3216S121WBE 120 100 0.015 6000 MHC3216S601PBE 600 100 0.07 2500 MHC3216S122LBE 1200 100 0.20 1000 MHC3225S600MBE 60 100 0.15 1500 MHC3225S102NBE 1000 50 0.09 2000 MHC4516S600WBE 60 100 0.015 6000 MHC4516S851MBE 850 100 0.15 1500 Part No. MHC2012 Series MHC3216 Series MHC3225 Series MHC4516 series Revision December 18, 2015 3/6 @ UN Semiconductor Co., Ltd. 2015 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. High Chip Ferrite Bead Impedance(Ω) +/-25% Test Freq.(MHz) DCR(Ω) (Max.) Rated Current (mA) MHC4532S121WBE 120 100 0.015 6000 MHC4532S601QBE 600 50 0.04 3000 MHC4532S132QBE 1300 600 0.04 3000 Part No. MHC4532 series Test Instruments： PART SIZE (EIA SIZE) 7” REEL Revision December 18, 2015 Qty. (pcs) Test Level：250 mV HP4291B RF IMPEDANCE / MATERIAL ANALYZER HP4338A/B MILLIOHMMETER Agilent 8720ES S-PARAMETER NETWORK ANALYZER HP6632B SYSTEM DC POWER SUPPLY 1005 (0402) 1608 (0603) 2012 (0805) 3216 (1206) 3225 (1210) 4516 (1806) 4532 (1812) 10000 4000 4000 3000 2000 2000 1000 4/6 @ UN Semiconductor Co., Ltd. 2015 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. High Chip Ferrite Bead Revision December 18, 2015 5/6 @ UN Semiconductor Co., Ltd. 2015 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. High Chip Ferrite Bead Test item Test condition A. Temperature : -40 ~ +85℃ B. Cycle : 100 cycles C. Dwell time : 30minutes Temperature Cycle Measurement : at ambient temperature 24 hrs after test completion Criteria A. No mechanical damage B.Impedance value should be within ± 20 % of the initial value A. Temperature : 125℃ ± 5℃ A. No mechanical damage B.Impedance value should be within ± 20 % of the initial value Operational Life Biased Humidity Resistance to Solder Heat B. Test time : 1000 hrs C. Apply current : full rated current Measurement : at ambient temperature 24 hrs after test completion A. Temperature : 40 ± 2℃ B. Humidity : 90 ~ 95 % RH C. Test time : 1000 hrs D. Apply current : full rated current Measurement : at ambient temperature 24 hrs after test completion A. No mechanical damage B. Impedance value should be within ± 20 % of the initial value A. Solder temperature : 260 ± 5℃ B. Flux : Rosin C. DIP time : 10 ± 1 sec A. More than 95 % of terminal electrode should be covered with new solder B. No mechanical damage C.Impedance value should be within ± 20 % of the initial value A. Temperature : 93 ± 2℃ B. Test time : 4 hrs Steam Aging Test Revision December 18, 2015 C. Solder temperature : 235 ± 5℃ D. Flux : Rosin E. DIP time : 5 ± 1 sec 6/6 More than 95 % of terminal electrode should be covered with new solder @ UN Semiconductor Co., Ltd. 2015 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.