Transistors SMD Type PNP Transistors MMBTA92 (K MBTA92) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Complementary to MMBTA42 (NPN) 1 0.55 ● Low collector-emitter saturation voltage +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● High voltage transistor 2 +0.02 0.15 -0.02 1.1 +0.2 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -300 Collector - Emitter Voltage VCEO -300 Emitter - Base Voltage Unit V VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Dissipation PC 350 mW RθJA 417 ℃/W TJ 150 Tstg -55 to 150 Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -300 Ic= -1 mA， IB=0 -300 Typ Max V Collector- emitter breakdown voltage VCEO Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= -200 V , IE=0 -0.25 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 -5 Collector-emitter saturation voltage VCE(sat) IC=-20 mA, IB=- 2mA -0.2 Base - emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 hfe（1） VCE= -10V, IC= -1mA 60 hfe（2） VCE= -10V, IC= -10mA 100 hfe（3） VCE= -10V, IC=-30mA 60 VCE= -20V, IC= -10mA,f=30MHz 50 DC current gain Transition frequency fT Unit uA V 300 MHz ■ Classification of hfe(2) Type MMBTA92 MMBTA92-L Range 100-300 100-200 Marking 2D www.kexin.com.cn 1 Transistors SMD Type PNP Transistors MMBTA92 ■ Typical Characterisitics IC VCE —— -350uA -300uA 40 -250uA -200uA 30 -150uA 20 0 4 8 12 16 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— COMMON EMITTER VCE= -10V 20 10 -0.1 24 -1 VCE (V) IC VBEsat —— -900 Ta=100 ℃ -100 Ta=25℃ -1 -10 COLLECTOR CURREMT IC —— IC -300 (mA) IC Ta=25℃ -600 Ta=100 ℃ β=10 -300 -0.1 -50 -1 -10 COLLECTOR CURREMT (mA) VBE fT 300 —— IC -100 (mA) IC fT (mA) (MHz) -100 TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a -10 -1 COMMON EMITTER VCE= -10V -0.1 -0 -300 -600 -900 100 COMMON EMITTER VCE=-20V Ta=25℃ 10 -0.1 -1200 -1 Cob/Cib 100 —— VCB/VEB (pF) COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ C 10 Cob 1 -0.1 -1 REVERSE VOLTAGE www.kexin.com.cn -10 V (V) PC 400 f=1MHz IE=0/IC=0 Cib -10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE -100 IC β=10 -50 -10 -0.1 2 -10 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat -500 IC Ta=25℃ 100 IB=-50uA COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT Ta=100℃ -100uA 10 0 IC hFE -400uA 50 —— COMMON EMITTER Ta=25℃ -450uA 60 hFE 1000 -500uA DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 70 (K MBTA92) -20 —— IC a C -100 (mA) T 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 T a (℃) 125 150