INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 90 A IDM Drain Current-Single Pulsed 360 A PD Total Dissipation @TC=25℃ 107 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.4 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 60 VGS(th) Gate Threshold Voltage VDS=VGS; ID=50μA 2.1 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 3.3 V VGS=10V; ID=90A 3.3 mΩ Gate-Source Leakage Current VGS= 20V; VDS= 0V 0.1 μA IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V 1 μA VSD Diode forward voltage IF=45A, VGS = 0V 1.2 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark