Kexin AO3419-HF-3 P-channel mosfet Datasheet

MOSFET
IC
SMD Type
P-Channel MOSFET
AO3419-HF (KO3419-HF)
SOT-23-3
Unit: mm
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
ID = -3.5 A
RDS(ON)
75m
(VGS = -10V)
RDS(ON)
95m
(VGS = -4.5V)
RDS(ON)
145m
1
0.55
VDS (V) = -20V
+0.2
1.6 -0.1
+0.2
2.8 -0.1
Features
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
1.1
+0.2
-0.1
(VGS = -2.5V)
0-0.1
Pb−Free Lead Finish
+0.1
0.68 -0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
Continuous Drain
Current *1
TA=25
P u l s e d D r a i n Cu r r e n t * 2
Power Dissipation *1
TA=25
TA=70
Thermal Resistance.Junction-to-Ambient
Thermal Resistance.Junction-to-Case
Junction and Storage Temperature Range
*1The value of R
ID
TA=70
JA
IDM
PD
R
JA
R
JC
TJ, TSTG
12
V
-3.5
-2.8
A
-15
1.4
0.9
W
125
/W
60
/W
-55 to 150
is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 Repetitive rating, pulse width limited by junction temperature.
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IC
MOSFET
SMD Type
P-Channel MOSFET
AO3419-HF (KO3419-HF)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
IGSS
Gate Threshold Voltage
VGS(th)
Testconditions
ID=250
Min
Typ
-20
A, VGS=0V
-0.5
VDS=-16V, VGS=0V ,TJ=55
-2.5
VDS=0V, VGS=
10V
VDS=VGS ID=-250
RDS(ON)
-0.7
-1.4
ID(ON)
Forward Transconductance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
Gate Source Charge
Qgs
V
VGS=-4.5V, ID=-3A
95
m
145
VGS=-4.5V, VDS=-5V
-15
VDS=-5V, ID=-3.5A
A
6.8
512
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=- =-10V, ID=-3.5A
S
620
pF
77
pF
62
pF
9.2
13
5.5
6.6
nC
0.8
nC
Gate Drain Charge
Qgd
1.9
nC
Turn-On DelayTime
tD(on)
5
ns
Turn-On Rise Time
tr
6.7
ns
Turn-0ff DelayTime
tD(off)
Turn-Off Fall Time
tf
Body Diode Reverse Recovery Time
trr
IF=-3.5A, dI/dt=100A/µs
9. 8
Body Diode Reverse Recovery Charge
Qrr
IF=-3.5A, dI/dt=100A/µs
2.7
Maximum Body-Diode Continuous Current
IS
Diode Forward Voltage
■ Marking
Marking
2
gFS
A
75
105
TJ=125
VGS=-2.5V, ID=-1A
On state drain current
A
1
A
VGS=-10V, ID=-3.5A
Unit
V
VDS=-16V, VGS=0V
VGS=-10V, ID=-3.5A
Static Drain-Source On-Resistance
Max
AL* F
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VSD
VGS=-10V, VDS=-10V, RL=2.8
IS=-1A,VGS=0V
,RGEN=3
-0.65
28
ns
13.5
ns
-0.81
12
ns
nC
-2
A
-0.95
V
MOSFET
SMD Type
■ Typical Characterisitics
P-Channel MOSFET
AO3419-HF (KO3419-HF)
30
12
-10V
25
9
-ID(A)
-3.5V
20
-ID (A)
VDS=-5V
-4.5V
15
-2.5V
10
3
VGS=-2.0V
5
6
0
25°C
0
0
1
2
3
4
5
0
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
170
1
2
3
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
4
Normalized On-Resistance
1.60
140
RDS(ON) (mΩ
Ω)
125°C
VGS=-2.5V
110
VGS=-4.5V
80
VGS=-10V
50
ID=-3.5A, VGS=-10V
1.40
ID=-3A, VGS=-4.5V
1.20
ID=-1A, VGS=-2.5V
1.00
0.80
20
0
0
2
4
6
8
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
180
1.0E+01
ID=-3.5A
1.0E+00
1.0E-01
120
125°C
90
-IS (A)
RDS(ON) (mΩ
Ω)
150
125°C
25°C
1.0E-02
1.0E-03
60
25°C
30
1.0E-04
1.0E-05
0.0
2.0
4.0
6.0
8.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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MOSFET
SMD Type
■ Typical Characterisitics
P-Channel MOSFET
AO3419-HF (KO3419-HF)
600
5
VDS=-10V
ID=-3.5A
450
Capacitance (pF)
-VGS (Volts)
4
3
2
Ciss
300
150
1
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
100.0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
Power (W)
100µs
1ms
1.0
10ms
100ms
10s
DC
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
10
100
10
1
0.1
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
100
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
.
RθJA=125°C/W
1
0.1
PD
Single Pulse
Ton
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4
20
1000
10.0
-ID (Amps)
Crss
0
0
Zθ JA Normalized Transient
Thermal Resistance
Coss
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T
100
1000
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