Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 1/6 CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC115TS3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA115TS3. • Pb-free & Halogen-free package. Equivalent Circuit Outline DTC115TS3 SOT-323 C B C R1 E R1=100 kΩ B：Base C：Collector E：Emitter B E Ordering Information Device DTC115TS3-0-T1-G Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name DTC115TS3 CYStek Product Specification Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 50 50 5 100 200 150 -55~+150 V V V mA mW °C °C Electrical Characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage VCBO 50 - - V IC=50μA Collector-Emitter Breakdown Voltage VCEO 50 - - V IC=1mA Emitter-Base Breakdown Voltage VEBO 5 - - V IE=50μA Collector-Base Cutoff Current ICBO - - 0.5 μA VCB=50V Emitter-Base Cutoff Current IEBO - - 0.5 μA VEB=4V VCE(sat) - - 0.3 V IC=1mA, IB=0.1mA DC Current Gain hFE 100 - 600 - VCE=5V, IC=1mA Input Resistance R 70 100 130 kΩ Transition Frequency fT - 250 - MHz Collector-Emitter Saturation Voltage VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device Recommended Soldering Footprint DTC115TS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 3/6 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Current Gain---HFE 1000 100 HFE@VCE=5V 100 VCESAT@IC=20IB VCESAT@IC=10IB 10 10 0.1 1 10 Collector Current---IC(mA) 100 0.1 1 10 Collector Current --- IC(mA) 100 Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 DTC115TS3 50 100 150 Ambient Temperature --- Ta(℃ ) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 4/6 Reel Dimension Carrier Tape Dimension DTC115TS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DTC115TS3 CYStek Product Specification Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 6/6 CYStech Electronics Corp. SOT-323 Dimension Marking: 3 Q A1 1 C Device Code Lp 2 8U TE □□ A detail Z bp e1 W B e Date Code E D A Z 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 θ He 0 v A 2 mm 1 Style: Pin 1.Base 2.Emitter 3.Collector scale *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0078 0.0157 0.0031 0.0059 0.0709 0.0866 0.0453 0.0531 0.0472 0.0551 DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.20 0.40 0.08 0.15 1.80 2.20 1.15 1.35 1.20 1.40 DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256* 0.0846 0.0965 0.0105 0.0181 0.0051 0.0091 0.0079 0.0079 0° 8° Millimeters Min. Max. 0.65* 2.15 2.45 0.26 0.46 0.13 0.23 0.2 0.2 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTC115TS3 CYStek Product Specification