ON NVD4856NT4G Power mosfet Datasheet

NTD4856N, NVD4856N
Power MOSFET
25 V, 89 A, Single N−Channel, DPAK/IPAK
Features
•
•
•
•
•
•
Trench Technology
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
4.7 mW @ 10 V
25 V
89 A
6.8 mW @ 4.5 V
D
Applications
• VCORE Applications
• DC−DC Converters
• Low Side Switching
N−Channel
G
S
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Unit
25
V
VGS
±20
V
ID
16.8
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.14
W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
ID
13.3
A
Power Dissipation
RqJA (Note 2)
TA = 85°C
Steady
State
13.0
TA = 85°C
PD
1.33
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
89
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
60
W
TA = 25°C
IDM
179
A
TA = 25°C
IDmaxPkg
45
A
TJ,
TSTG
−55 to
+175
°C
TC = 85°C
tp=10ms
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
69
IS
50
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 19 Apk, L = 1.0 mH, RG = 25 W)
EAS
180.5
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
°C
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 3
1 2
1
1
1
3
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
2 3
3 IPAK
CASE 369AC
(Straight Lead)
2
3
IPAK
CASE 369D
(Straight Lead
DPAK) STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
10.3
TA = 25°C
Pulsed Drain
Current
4
4
Drain
4
Drain
4
Drain
AYWW
48
56NG
Value
VDSS
AYWW
48
56NG
Gate−to−Source Voltage
Symbol
AYWW
48
56NG
Parameter
Drain−to−Source Voltage
4
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
A
Y
WW
4856N
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD4856N/D
NTD4856N, NVD4856N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
2.5
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
3.5
Junction−to−Ambient – Steady State (Note 1)
RqJA
70
Junction−to−Ambient – Steady State (Note 2)
RqJA
113
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
25
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
23
VGS = 0 V,
VDS = 20 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
1.45
5.9
mV/°C
VGS = 10 V
ID = 30 A
3.9
4.7
VGS = 4.5 V
ID = 30 A
5.3
6.8
VDS = 1.5 V, ID = 15 A
73
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
279
Total Gate Charge
QG(TOT)
18
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
QGS
2241
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
pF
27
3.4
VGS = 4.5 V, VDS = 15 V, ID = 30 A
QGD
QG(TOT)
567
6.7
nC
6.6
VGS = 10 V, VDS = 15 V, ID = 30 A
38
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
15.7
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
22.5
18.6
ns
7.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4856N, NVD4856N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
8.7
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
17.5
ns
27.2
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.87
TJ = 125°C
0.72
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.2
V
18.7
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
9.3
ns
9.4
QRR
8.0
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
Gate Inductance
LG
3.46
Gate Resistance
RG
0.6
PACKAGE PARASITIC VALUES
TA = 25°C
1.88
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTD4856N, NVD4856N
TYPICAL PERFORMANCE CURVES
100
ID, DRAIN CURRENT (AMPS)
4.2 V
TJ = 25°C
4V
3.8 V
80
3.6 V
70
3.4 V
60
50
40
3.2 V
30
20
2.8 V
10
2.6 V
0
1
2
3
4
5
TJ = 25°C
TJ = −55°C
0
1
2
3
4
5
Figure 2. Transfer Characteristics
0.03
0.02
0.01
2
4
6
8
10
0.008
0.0075
TJ = 25°C
0.007
0.0065
0.006
VGS = 4.5 V
0.0055
0.005
0.0045
VGS = 11.5 V
0.004
0.0035
0.003
0.0025
0.002
20
30
40
50
60
70
80
90
100
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = 125°C
Figure 1. On−Region Characteristics
ID = 30 A
TJ = 25°C
1.6
VDS ≥ 10 V
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.04
0
130
120
110
100
90
80
70
60
50
40
30
20
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
10 V
90
1.4
1.2
1.0
1000
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
100
5
10
15
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
25
NTD4856N, NVD4856N
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
TYPICAL PERFORMANCE CURVES
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
5
10
15
20
25
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12
8
Q1
4
2
ID = 30 A
TJ = 25°C
0
0
IS, SOURCE CURRENT (AMPS)
td(off)
tf
100
tr
td(on)
10
10
RG, GATE RESISTANCE (OHMS)
12
16
20
24
28
32
36
40
VGS = 0 V
25
20
15
10
5
100 ms
1 ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.8
0.6
1.0
Figure 10. Diode Forward Voltage vs. Current
10 ms
10
0.4
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
100
TJ = 25°C
0
0.2
100
1000
I D, DRAIN CURRENT (AMPS)
8
QG, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
0.1
0.1
4
30
VDD = 15 V
ID = 30 A
VGS = 11.5 V
1
Q2
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
1000
t, TIME (ns)
VGS
6
Figure 7. Capacitance Variation
1
1
QT
10
200
ID = 19 A
180
160
140
120
100
80
60
40
20
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4856N, NVD4856N
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
TYPICAL PERFORMANCE CURVES
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E-05
1.0E-04
t1
t2
DUTY CYCLE, D = t1/t2
1.0E-03
1.0E-02
t, TIME (ms)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
1.0E-01
1.0E+00
1.0E+01
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD4856NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4856N−1G
IPAK
(Pb−Free)
75 Units / Rail
NTD4856N−35G
IPAK Trimmed Lead
(3.5 ± 0.15 mm)
(Pb−Free)
75 Units / Rail
NVD4856NT4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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6
NTD4856N, NVD4856N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD4856N, NVD4856N
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC
ISSUE O
B
V
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
C
E
R
DIM
A
B
C
D
E
F
G
H
J
K
R
V
W
A
SEATING PLANE
K
W
F
J
G
H
D
3 PL
0.13 (0.005) W
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
0.000 0.010
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.09
2.29 BSC
0.87
1.01
0.46
0.58
3.40
3.60
4.57
5.46
0.89
1.27
0.000
0.25
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD4856N/D