MSCD100B Glass Passivated Rectifier Diode Modules VRRM 800 to 1800V IFAV 100 Amp Applications y y Circuit y Non-controllable rectifiers for AC/AC converters Line rectifiers for transistorized AC motor controllers Field supply for DC motors Features y y y Blocking voltage:800 to 1800V Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate Glass passivated chip Module Type TYPE MSCD100B-08 MSCD100B-12 MSCD100B-16 MSCD100B-18 MSAD100B-08 MSAD100B-12 MSAD100B-16 MSAD100B-18 MSKD100B-08 MSKD100B-12 MSKD100B-16 MSKD100B-18 VRRM VRSM 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Maximum Ratings Symbol Conditions Single phase ,half wave 180°conduction Tc=109℃ IFAV Single phase ,half wave 180°conduction Tc=97℃ IF(RMS) t=10mS Tvj =45℃ IFSM t=10mS Tvj =45℃ i2t a.c.50HZ;r.m.s.;1min Visol Tvj Tstg Values Units 100 A 150 A 2500 A 31250 A2s 3000 -40 to +150 V ℃ Mt To terminals(M5) 3±15% ℃ Nm Ms To heatsink(M6) 5±15% Nm Weight Module 140 g Conditions Values Units Per diode 0.35 ℃/W Module 0.1 ℃/W Thermal Characteristics Symbol Rth(j-c) Rth(c-s) -40 to +125 Electrical Characteristics Symbol Conditions VFM IRD T=25℃ IF =300A Tvj=150℃ VRD=VRRM Document Number: MSCD100B Aug.20, 2010 Values Min. － － Typ. 1.30 － Max. 1.55 5 Units V mA www.smsemi.com 1 MSCD100B Performance Curves 150 200 DC W A sin.180 DC rec.120 100 rec.60 rec.30 100 sin.180 rec.120 50 rec.60 rec.30 Pvtot ID 0 0 ID 90 0 A 180 0 Tc 50 100 ℃ 150 Fig2.Forward Current Derating Curve Fig1. Power dissipation 0.5 3000 ℃/ W A 50HZ Zth(j-C) 0.25 1500 0 0 0.001 0.01 0.1 1.0 10 1 S 100 10 cycles 100 Fig4. Max Non-Repetitive Forward Surge Current Fig3. Transient thermal impedance 400 A 300 typ. 200 max. 100 25℃ - - -125℃ IF 0 0 VF 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics Document Number: MSCD100B Aug.20, 2010 www.smsemi.com 2 MSCD100B Package Outline Information CASE: D1-1 Dimensions in mm Document Number: MSCD100B Aug.20, 2010 www.smsemi.com 3