ON NTK3139PT1H Power mosfet Datasheet

NTK3139P
Power MOSFET
−20 V, −780 mA, Single P−Channel with
ESD Protection, SOT−723
Features
•
•
•
•
•
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P−channel Switch with Low RDS(on)
44% Smaller Footprint and 38% Thinner than SC−89
Low Threshold Levels Allowing 1.5 V RDS(on) Rating
Operated at Low Logic Level Gate Drive
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
−20 V
RDS(on) TYP
ID Max
0.38 W @ −4.5 V
−780 mA
0.52 W @ −2.5 V
−660 mA
0.70 W @ −1.8 V
−100 mA
0.95 W @ −1.5 V
−100 mA
Applications
• Load/Power Switching
• Interfacing, Logic Switching
• Battery Management for Ultra Small Portable Electronics
SOT−723 (3−LEAD)
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±6
V
ID
−780
mA
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
−570
tv5s
TA = 25°C
−870
Steady
State
TA = 25°C
PD
tv5s
Continuous Drain
Current (Note 2)
Steady
State
Power Dissipation
(Note 2)
ID
TA = 85°C
TA = 25°C
MARKING DIAGRAM
mA
−660
−480
KD M
310
mW
IDM
−1.2
A
Operating Junction and Storage Temperature
TJ, TSTG
−55 to
150
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
tp = 10 ms
1 − Gate
2 − Source
3 − Drain
mW
450
550
TA = 25°C
2
Top View
PD
Pulsed Drain Current
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2. Surface mounted on FR4 board using the minimum recommended pad size
SOT−723
CASE 631AA
STYLE 5
1
KD = Specific Device Code
M
= Date Code
ORDERING INFORMATION
Device
Package
NTK3139PT1G
NTK3139PT1H
NTK3139PT5G
NTK3139PT5H
Shipping†
4000 / Tape & Reel
SOT−723
Pb−Free
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1
Publication Order Number:
NTK3139P/D
NTK3139P
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
Parameter
RqJA
280
°C/W
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
228
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
RqJA
400
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface mounted on FR4 board using the minimum recommended pad size
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown
Voltage
V(BR)DSS
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/TJ
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V, ID = −250 mA
−20
−16.5
ID = −250 mA, Reference to 25°C
VGS = 0 V,
VDS = −16V
V
mV/°C
TJ = 25°C
−1.0
TJ = 125°C
−2.0
IGSS
VDS = 0 V, VGS = ±4.5 V
VGS(TH)
VGS = VDS, ID = −250 mA
mA
±2.0
mA
−1.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
2.4
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
−0.45
gFS
mV/°C
VGS = −4.5 V, ID = −780 mA
0.38
0.48
VGS = −2.5 V, ID = −660 mA
0.52
0.67
VGS = −1.8 V, ID = −100 mA
0.70
0.95
VGS = −1.5 V, ID = −100 mA
0.95
2.20
VDS = −10 V, ID = −540 mA
1.2
W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1 MHz, VDS = −16 V
113
170
15
25
9.0
15
pF
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn On Delay Time
Rise Time
TurnOff Delay Time
Fall Time
td(ON)
tr
td(OFF)
9.0
VGS = −4.5 V, VDS = −10 V,
ID = −200 mA, RG = 10 W
tf
5.8
ns
32.7
20.3
DRAIN SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = −350 mA
TJ = 25°C
−0.8
13.2
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −1.0 A, VDD = −20 V
QRR
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2
V
ns
11.8
1.4
5.0
5. Pulse Test: pulse width = 300 ms, duty cycle = 2%
6. Switching characteristics are independent of operating junction temperatures
−1.2
nC
NTK3139P
TYPICAL CHARACTERISTICS
VDS ≥ −5 V
1.5
TJ = 25°C
−ID, DRAIN CURRENT (A)
−2.2 V
−2.0 V
1.0
−1.8 V
−1.6 V
−1.5 V
0.5
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1.8
VGS = −4.5 V to −2.5 V
−1.4 V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0.9
TJ = 125°C
0.3
TJ = −55°C
0.75
1.75
2.25
Figure 2. Transfer Characteristics
ID = −0.78 A
TJ = 25°C
2.0
1.5
1.0
0.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0.8
TJ = 25°C
0.7
VGS = −2.5 V
0.6
0.5
VGS = −4.5 V
0.4
0.3
0.2
0.4
0.7
0.9
1.2
1.4
1.7
1.9
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.2
VGS = 0 V
VGS = −1.5 V, ID = −100 mA
−IDSS, LEAKAGE (nA)
1.0
VGS = −1.8 V, ID = −100 mA
0.8
1.25
Figure 1. On−Region Characteristics
−VGS, GATE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
0.6
−VGS, GATE−TO−SOURCE VOLTAGE (V)
2.5
1
1.2
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3.0
0
1.5
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
2.0
1000
VGS = −2.5 V, ID = −550 mA
0.6
0.4
TJ = 150°C
TJ = 125°C
100
VGS = −4.5 V, ID = −630 mA
0.2
−60 −35
−10
15
40
65
90
10
140
115
5.0
10
15
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTK3139P
TYPICAL CHARACTERISTICS
150
120
VDD = −10 V
ID = −200 mA
VGS = −4.5 V
t, TIME (ns)
td(off)
90
60
30
0
tf
10
td(on)
tr
Coss
Crss
0
2
4
6
8
10
12
14
16
18
1
20
1
10
100
−DRAIN−TO−SOURCE VOLTAGE (V)
RG, GATE RESISTANCE (W)
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
2.0
−IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
100
VGS = 0 V
TJ = 25°C
Ciss
150°C
VGS = 0 V
125°C
1.5
25°C
1.0
TJ = −55°C
0.5
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
1.2
NTK3139P
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
L2
RECOMMENDED
SOLDERING FOOTPRINT*
BOTTOM VIEW
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTK3139P/D
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