DMT3003LFG Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) Max ID Max TC = +25°C Low RDS(ON) – Ensures On-State Losses are Minimized Excellent QGD × RDS(ON) Product (FOM) 3.2mΩ @ VGS = 10V 100A 5.5mΩ @ VGS = 4.5V 85A Advanced Technology for DC-DC Converts Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 100% UIS (Avalanche) Rated Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability BVDSS 30V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Mechanical Data Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminal Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Backlighting Power Management Functions DC-DC Converters ® D PowerDI3333-8 Pin 1 S S S 1 8 2 7 3 6 4 5 G D D D D Top View G S Top View Internal Schematic Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMT3003LFG-7 DMT3003LFG-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. YYWW Marking Information SG2 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 16 = 2016) WW = Week Code (01 to 53) SG2 PowerDI is a registered trademark of Diodes Incorporated. DMT3003LFG Document number: DS37819 Rev. 2 - 2 1 of 7 www.diodes.com June 2016 © Diodes Incorporated DMT3003LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Continuous Drain Current (Note 5) VGS = 10V TC = +25°C TC = +70°C TA = +25°C TA = +70°C Value 30 ±20 100 90 ID Units V V A IS IDM IAS EAS 22 18 3 100 16 250 A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 2.4 52 62 2 -55 to +150 Units W °C/W W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Avalanche Current, L=1mH Avalanche Energy, L=1mH A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C TC = +25°C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS 30 — — — — — — 1 V μA ±100 nA — 2.4 4 0.75 3 3.2 5.5 1 V VSD 1 — — — CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 2,370 1,360 240 0.6 20 44 7 8 6.2 4.3 21 8 25 37 — — — — — — — — — — — — — — IGSS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Bodyy Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition VGS = 0V, ID = 1mA VDS = 24V, VGS = 0V VGS = +20V, VDS = 0V VGS = -16V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 15A VGS = 0V, IS = 10A pF VDS = 15V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 15V, ID = 20A ns VDD = 15V, VGS = 10V, RL = 0.75Ω, RG = 3Ω, ID = 20A ns nC IF = 15A, di/dt = 500A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT3003LFG Document number: DS37819 Rev. 2 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMT3003LFG 30 VGS = 10.0V VGS = 4.5V 25.0 VDS = 5V 25 VGS = 4.0V VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30.0 20.0 VGS = 3.5V 15.0 VGS = 2.8V 10.0 5.0 85oC 125oC 10 0 150oC 0.5 1 1.5 -55oC 0.5 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VGS = 4.5V 0.004 0.003 0.002 VGS = 10V 0.001 0 5 10 15 20 25 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VDS, DRAIN-SOURCE VOLTAGE (V) 0.005 VGS = 10V 0.004 150oC 125oC 0.003 85oC 25oC 0.002 -55oC 0.001 0 5 10 15 20 25 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 ID = 20A 0.02 0.01 0 0 2 6 8 10 12 14 16 2 VGS = 10V, ID = 20A 1.5 1 VGS = 4.5V, ID = 15A 0.5 0 30 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature Document number: DS37819 Rev. 2 - 2 4 2.5 ID, DRAIN CURRENT (A) DMT3003LFG 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.005 0 1 Figure 1. Typical Output Characteristic 0.006 0 0 2 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 25oC 0 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 15 5 VGS = 2.5V VGS = 2.2V 20 3 of 7 www.diodes.com Figure 6. On-Resistance Variation with Junction Temperature June 2016 © Diodes Incorporated 0.008 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMT3003LFG 0.007 0.006 VGS = 4.5V, ID = 15A 0.005 0.004 0.003 0.002 VGS = 10V, ID = 20A 0.001 2.5 2 ID = 1mA 1.5 ID = 250µA 1 0.5 0 0 -50 -25 0 25 50 75 100 125 -50 150 -25 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 20 10000 CT, JUNCTION CAPACITANCE (pF) VGS = 0V IS, SOURCE CURRENT (A) 0 15 TJ = 85oC 10 TJ = 125oC 5 TJ = 25oC TJ = 150oC TJ = -55oC f=1MHz Ciss 1000 Coss Crss 100 10 0 0 0.3 0.6 0.9 1.2 0 1.5 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 1000 RDS(ON) Limited PW =100µs ID, DRAIN CURRENT (A) VGS (V) 8 6 4 VDS = 15V, ID = 20A 2 100 10 PW =1ms 0.1 0 0 5 10 15 20 25 30 35 40 45 50 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Figure 11. Gate Charge Document number: DS37819 Rev. 2 - 2 P =100ms TJ(Max) = 150℃ W TA = 25℃ PW =1s Single Pulse PW =10s DUT on 1*MRP Board DC VGS=10V 0.01 0.01 Qg (nC) DMT3003LFG PW =10ms 1 4 of 7 www.diodes.com June 2016 © Diodes Incorporated DMT3003LFG r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 0.1 D=0.9 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 51℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMT3003LFG Document number: DS37819 Rev. 2 - 2 5 of 7 www.diodes.com June 2016 © Diodes Incorporated DMT3003LFG Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID b2(4x) E E2 e1 8 z(4x) b PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 e 0.65 e1 0.79 0.89 0.84 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm L1(3x) e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 X2 8 Y2 X1 Y1 Y3 Y X DMT3003LFG Document number: DS37819 Rev. 2 - 2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 C 6 of 7 www.diodes.com June 2016 © Diodes Incorporated DMT3003LFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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