Diodes DMN2014LHAB-13 Low on-resistance Datasheet

DMN2014LHAB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
BVDSS
RDS(ON) Max
20V
13mΩ @ VGS = 4.5V
14mΩ @ VGS = 4.0V
17mΩ @ VGS = 3.1V
18mΩ @ VGS = 2.5V
28mΩ @ VGS = 1.8V








ID
TA = +25°C
9.0A
8.7A
8.0A
6.7A
6.3A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.



Power Management Functions
Battery Pack
Load Switch
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data





Applications
Case: U-DFN2030-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.012 grams (Approximate)
D2
D1
U-DFN2030-6
(Type B)
G1
G2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
ESD PROTECTED TO 2kV
Top View
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2014LHAB-7
DMN2014LHAB-13
Notes:
Case
U-DFN2030-6 (Type B)
U-DFN2030-6 (Type B)
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
ADVANCE INFORMATION
Product Summary
24W = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 for 2016)
WW = Week code (01 to 53)
24W
DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
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February 2016
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DMN2014LHAB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
TA = +25°C
TA = +70°C
TA = +25C
TA = +70C
Steady
State
t < 10s
Value
20
±12
9.0
7.1
ID
A
9.3
7.4
45
ID
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1% )
Unit
V
V
IDM
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Symbol
TA = +25°C
TA = +70°C
Steady State
t < 10s
TA = +25°C
TA = +70°C
Steady State
t < 10s
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Electrical Characteristics
Value
0.8
0.5
157
148
1.7
1.1
73.7
68
9.4
-55 to +150
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
—
—
—
—
—
—
1.0
±10
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(TH)
0.3
RDS(ON)
—
|Yfs|
VSD
—
—
1.1
13
14
17
18
28
—
1.0
V
Static Drain-Source On-Resistance
0.71
10
11
12
13
19
25
0.75
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.0A
VGS = 4.0V, ID = 4.0A
VGS = 3.1V, ID = 4.0A
VGS = 2.5V, ID = 4.0A
VGS = 1.8V, ID = 3.5A
VDS = 5V, ID = 6A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
—
—
1550
166
145
1.37
8.4
16
2.3
2.5
6.9
15.5
40.9
12
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 2.5V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
tD(ON)
tR
tD(OFF)
tF
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 10V, ID = 6A
VDD = 10V, RL = 1.7Ω,
VGS = 5.0V, Rg = 3Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad
7. Repetitive rating, pulse width limited by junction temperature
8. Guaranteed by design. Not subject to product testing
DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
2 of 6
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February 2016
© Diodes Incorporated
DMN2014LHAB
30
18
20
VGS = 1.8V
15
VGS = 1.5V
10
12
10
8
℃
TA = 150癈
6
℃
TA = 125癈
℃
TA = 85癈
℃
TA = 25癈
2
VGS = 1.2V
0
℃
TA = -55癈
0
0.5
1.0
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
2.0
0.016
0.014
0.012
VGS = 2.5V
0.010
VGS = 4.5V
0.008
0.006
0.004
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = 4.5V
ID = 5A
1.6
VGS = 3.6V
ID = 3A
1.4
VGS = 2 .5V
ID = 1A
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
2.0
VGS = 4.5V
℃
TA = 150癈
0.015
℃
TA = 125癈
℃
TA = 85癈
0.010
℃
TA = 25癈
℃
TA = -55癈
0.005
0
30
1.8
0.5
1.0
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.020
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.018
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
14
4
5
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VDS = 5.0V
16
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
ADVANCE INFORMATION
20
VGS = 2.5V
VGS = 3.0V
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 10V
0
5
10
15
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.020
0.018
VGS = 2.5 V
ID = 1A
0.016
VGS = 3.6V
ID = 3A
0.014
0.012
VGS = 4.5V
ID = 5A
0.010
0.008
0.006
0.004
-50
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-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
February 2016
© Diodes Incorporated
DMN2014LHAB
VGS GATE THRESHOLD VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
10
Ciss
1,000
C oss
100
Crss
f = 1MHz
10
0
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 7 Typical Junction Capacitance
6
4
2
0
20
VDS = 10V
I D = 6A
8
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Figure 8 Gate Charge
40
100
RDS(ON) Limited
ID, DRAIN CURRENT (A)
PW =100µs
10
PW =1ms
1
0.1
0.01
PW =10ms
PW =100ms
TJ(Max) = 150℃
PW =1s
TC = 25℃
PW =10s
Single Pulse
DC
DUT on 1*MRP Board
VGS= 4.5V
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. SOA, Safe Operation Area
1
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
1,000
100
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
R JA(t) = r(t) * R JA
℃ /W
R JA = 100癈
Duty Cycle, D = t1/ t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 10
11 Transient Thermal Resistance
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10
100
1,000
February 2016
© Diodes Incorporated
DMN2014LHAB
Package Outline Dimensions
ADVANCE INFORMATION
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2030-6 (Type B)
A3
A
Seating Plane
A1
D
Dim
A
A1
A3
b
D
D2
E
E2
e
L
z
e
D2
E
E2
Pin#1 ID
U-DFN2030-6
(Type B)
Min
Max
Typ
0.55
0.65
0.60
0.00
0.05
0.02
--0.15
0.20
0.30
0.25
1.95
2.05
2.00
1.40
1.60
1.50
2.95
3.05
3.00
1.65
1.75
1.70
--0.50
0.28
0.38
0.33
--0.375
All Dimensions in mm
L
z(4x)
b
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2030-6 (Type B)
X3
Dimensions
X2
Y2
Y1
G
X1
DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
X
G
X
X1
X2
X3
Y
Y1
Y2
Value
(in mm)
0.220
0.350
0.850
1.600
1.350
0.530
1.800
3.300
Y
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DMN2014LHAB
ADVANCE INFORMATION
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Copyright © 2016, Diodes Incorporated
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DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
6 of 6
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February 2016
© Diodes Incorporated