AS3BD, AS3BG, AS3BJ www.vishay.com Vishay General Semiconductor Avalanche Surface Mount Rectifiers FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Controlled avalanche characteristics • Low leakage current • High forward surge capability • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 DO-214AA (SMB) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 3.0 A VRRM 200 V, 400 V, 600 V IFSM 90 A trr 140 ns EAS 20 mJ VF at IF = 3.0 A (TA = 125 °C) 0.86 V TJ max. 175 °C Package DO-214AA (SMB) Diode variation Single die TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage VRRM Maximum DC forward current (fig. 1) Peak forward surge current 10 ms single half sine-wave, non-repetitive, cool junction Non-repetitive avalanche energy at TJ = 25 °C IAS = 2.0 A max. IAS = 1.0 A typ. Operating junction and storage temperature range AS3BD AS3BG AS3BJ A3D A3G A3J 200 400 600 IF (1) 3.0 IF (2) 2.0 IFSM 90 EAS TJ, TSTG 20 30 -55 to +175 UNIT V A A mJ °C Notes (1) Mounted on 14 mm x 14 mm x 2 areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended 1.52 mm x 2.18 mm x 2 pad areas Revision: 01-Dec-16 Document Number: 89377 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AS3BD, AS3BG, AS3BJ www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.5 A IF = 3.0 A Instantaneous forward voltage IF = 1.5 A IF = 3.0 A SYMBOL TYP. TA = 25 °C VF (1) TA = 125 °C TA = 25 °C Reverse current VR = 600 V Typical junction capacitance per diode Rated VR = 4.0 V, 1 MHz IR (2) TA = 125 °C CJ MAX. 0.90 - 0.98 1.05 0.78 - 0.86 0.95 0.5 20 40 150 40 - UNIT V μA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL AS3BJ RJA (1) 100 RJM (2) 14 UNIT °C/W Notes Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RJA - junction to ambient Units mounted on PCB with 14 mm x 14 mm x 2 areas, 1 oz. copper pad areas; RJM - junction to mount (1) (2) ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE AS3BJ-M3/52T PREFERRED P/N 0.096 52T 750 7" diameter plastic tape and reel AS3BJ-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel AS3BJHM3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel AS3BJHM3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel AS3BJHM3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel AS3BJHM3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 3.6 3.2 TM = 140 °C 2.8 2.4 TA = 25 °C 2.0 Free air 1.6 1.2 0.8 TM Measured at the Terminal 0.4 D = 0.3 D = 0.5 2.8 Average Power Loss (W) DC Forward Current (A) 3.2 D = 0.8 D = 0.2 2.4 D = 1.0 2.0 D = 0.1 1.6 1.2 T 0.8 0.4 D = tp/T tp 0 0 0 25 50 75 100 125 150 175 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 01-Dec-16 Document Number: 89377 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AS3BD, AS3BG, AS3BJ www.vishay.com Vishay General Semiconductor 1000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 175 °C 10 TA = 125 °C TA = 75 °C 1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 TA = 25 °C 0.1 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.1 10 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 Transient Thermal Impedance (°C/W) 1000 Instantaneous Reverse Current (µA) 1 Instantaneous Forward Voltage (V) TJ = 175 °C 100 TJ = 125 °C 10 TJ = 75 °C 1 TJ = 25 °C 0.1 10 20 30 40 50 60 70 80 90 Free Air Junction to Ambient 100 10 1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 01-Dec-16 Document Number: 89377 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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