ON NTMFS4957NT1G Power mosfet dual nâ channel Datasheet

NTMFS4957N
Power MOSFET
30 V, 70 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
Optimized for Portable Applications with 5 V Gate Drive
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
http://onsemi.com
V(BR)DSS
RDS(ON) MAX
4.0 mW @ 10 V
30 V
• CPU Power Delivery
• DC−DC Converters
• Notebook Battery Management
ID MAX
70 A
6.0 mW @ 4.5 V
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
17.1
A
TA = 25°C
Continuous Drain
Current RqJA
(Note 1)
TA = 100°C
N−CHANNEL MOSFET
TA = 25°C
PD
2.6
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
30
A
Continuous Drain
Current RqJA
(Note 2)
TA = 100°C
Steady
State
S (1,2,3)
10.9
Power Dissipation
RqJA (Note 1)
Power Dissipation
RqJA ≤ 10 s (Note 1)
G (4)
MARKING
DIAGRAM
D
19
TA = 25°C
PD
8.1
W
TA = 25°C
ID
10.2
A
TA = 100°C
6.5
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
D
4957N
AYWZZ
D
D
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.92
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
70
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
43
W
TA = 25°C, tp = 10 ms
IDM
210
A
IDmax
100
A
Device
Package
Shipping†
TJ,
TSTG
−55 to
+150
°C
NTMFS4957NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4957NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Pulsed Drain
Current
TC = 85°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
44
IS
40
A
Drain to Source DV/DT
dV/dt
6.5
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 37 Apk, L = 0.1 mH, RG = 25 W)
EAS
68.5
mJ
TL
260
°C
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 1
1
Publication Order Number:
NTMFS4957N/D
NTMFS4957N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
2.9
Junction−to−Ambient – Steady State (Note 3)
RqJA
48
Junction−to−Ambient – Steady State (Note 4)
RqJA
135
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
14.8
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 15.5 A,
Tcase = 25°C, ttransient = 100 ns
34
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
15
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.63
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.32
gFS
ID = 30 A
3.2
ID = 15 A
3.2
ID = 30 A
4.8
ID = 15 A
4.8
VDS = 1.5 V, ID = 15 A
mV/°C
4.0
6.0
37
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
2516
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Capacitance Ratio
CRSS /
CISS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
VGS = 0 V, f = 1 MHz, VDS = 15 V
840
pF
25
VGS = 0 V, VDS = 15 V, f = 1 MHz
0.010
0.020
15.9
VGS = 4.5 V, VDS = 15 V; ID = 30 A
4.0
7.6
nC
2.2
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
31
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTMFS4957N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
14.4
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
25
tf
5.7
td(ON)
10.6
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
ns
23.4
21.1
ns
29.3
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.88
TJ = 125°C
0.78
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
39
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
19
ns
20
35
nC
PACKAGE PARASITIC VALUES
Source Inductance
LS
0.93
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
TA = 25°C
1.1
2.0
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
NTMFS4957N
TYPICAL CHARACTERISTICS
VGS = 4.0 V
7V
3.8 V
3.6 V
100 4.5 V
3.4 V
80
3.2 V
60
3.0 V
40
2.8 V
20
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS = 10 V
TJ = 25°C
2.6 V
2.4 V
0
1
2
3
80
60
TJ = 25°C
40
20
TJ = 125°C
TJ = −55°C
1.0
1.5
2.0
3.0
2.5
3.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.015
0.014
ID = 30 A
TJ = 25°C
0.013
0.012
0.011
4.0
0.007
TJ = 25°C
0.0065
0.006
0.0055
0.010
0.009
0.008
VGS = 4.5 V
0.005
0.0045
0.007
0.006
0.005
0.004
0.003
2.0
100
0
4
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
120
120
4.2 V
10 V
ID, DRAIN CURRENT (A)
140
0.004
VGS = 10 V
0.0035
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS (V)
10.0
0.003
20
Figure 3. On−Resistance vs. VGS
40 50 60 70 80 90 100 110 120 130 14
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
2
1.9
1.8 ID = 30 A
1.7 VGS = 10 V
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
−50
−25
0
30
VGS = 0 V
IDSS, LEAKAGE (nA)
TJ = 150°C
1000
100
10
25
50
75
100
125
150
TJ = 125°C
TJ = 85°C
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
30
NTMFS4957N
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TYPICAL CHARACTERISTICS
Ciss
VGS = 0 V
TJ = 25°C
Coss
Crss
0
5
10
15
20
25
6
5
Qgd
4
Qgs
3
VDD = 15 V
VGS = 10 V
ID = 30 A
2
1
0
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32
30
VGS = 0 V
td(off)
IS, SOURCE CURRENT (A)
t, TIME (ns)
7
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
tf
tr
td(on)
10
1
10
25
20
TJ = 125°C
15
10
5
TJ = 25°C
0
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
10
100 ms
1 ms
VGS = 20 V
Single Pulse
TC = 25°C
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (A)
8
Figure 7. Capacitance Variation
100
0.1
TJ = 25°C
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
1
QT
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
11
10
100
70
ID = 37 A
60
50
40
30
20
10
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
150
NTMFS4957N
TYPICAL CHARACTERISTICS
100
1
Duty Cycle = 50%
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
PULSE TIME (sec)
Figure 13. Thermal Response
100
90
80
70
GFS (S)
R(t) (°C/W)
10
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
ID (A)
Figure 14. GFS vs. ID
http://onsemi.com
6
80
90
100
100
1000
NTMFS4957N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
8X
0.10
C A B
0.05
c
4X
e/2
1
4
0.965
K
G
0.750
1.000
L
PIN 5
(EXPOSED PAD)
4X
1.270
b
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
1.330
2X
0.905
2X
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTMFS4957N/D