Renesas BCR5FM-12LB-A8BB0 600v - 5a - triac medium power use Datasheet

Preliminary Datasheet
BCR5FM-12LB
600V - 5A - Triac
R07DS0960EJ0001
Rev.0.01
Nov 19, 2012
Medium Power Use
Features




 Insulated Type
 Planar Passivation Type
 Viso: 2000 V
IT (RMS) : 5 A
VDRM : 600 V
Tj: 150°C
IFGTI, IRGTI, IRGT: 20 mA (10mA) Note5
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, small motor control, heater control, solenoid driver, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
Voltage class
12
600
720
Symbol
VDRM
VDSM
Unit
V
V
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
5
A
Commercial frequency, sine full wave
360 conduction, Tc = 121C
Surge on-state current
ITSM
50
A
60Hz sinewave 1 full cycle, peak
value, non-repetitive
I2 t
10.4
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
3
0.3
10
2
–40 to +150
–40 to +150
1.9
2000
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note6
R07DS0960EJ0001 Rev.0.01
Nov 19, 2012
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute
T1  T2  G terminal to case
Page 1 of 3
BCR5FM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 7A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
20 Note5
20 Note5
20 Note5
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
0.2
0.1
—
5
1
—
—
—
—
—
—
—
3.8
—
—
V
V
C/W
V/s
V/s
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
Notes: 1.
2.
3.
4.
5.
6.
Rth (j-c)
(dv/dt)c
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
Tj = 150C
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
High sensitivity (IGT  10 mA) is also available (IGT item: 1).
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –2.5A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0960EJ0001 Rev.0.01
Nov 19, 2012
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 3
BCR5FM-12LB
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code

RENESAS Code
PRSS0003AG-A
Previous Code

MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
12.98 ± 0.30
15.87 ± 0.20
3.18 ± 0.10
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
BCR5FM-12LB#BB0
BCR5FM-12LB-A8#BB0
Note:
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS0960EJ0001 Rev.0.01
Nov 19, 2012
Page 3 of 3
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