JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET V(BR)DSS 650V TO-251S RDS(on)MAX ID 3.0Ω@10V 4A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE 1 2 3 FEATURE High Current Rating z z Lower RDS(on) z Lower Capacitance Lower Total Gate Charge z z Tighter VSD Specifications Avalanche Energy Specified z MARKING CJD04N65 z XXX EQUIVALENT CIRCUIT CJD04N65 = Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current ID 4.0 Pulsed Drain Current IDM 16 Single Pulsed Avalanche Energy (note1) EAS 280 Power Dissipation PD 1.25 W RθJA 100 ℃/W TJ, TSTG -55 ~+150 TL 260 Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds www.cj-elec.com 1 V A mJ ℃ C,May,2016 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 650 V Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =4.0A 1.5 Zero gate voltage drain current IDSS VDS =600V, VGS =0V 25 µA Gate-body leakage curren (note2) IGSS VDS =0V, VGS =±30V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 3.5 4.0 V Static drain-source on-resistance RDS(on) VGS =10V, ID =2.0A 2.3 3.0 Ω On characteristics (note2) 2.0 Dynamic characteristics (note 3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 760 VDS =25V,VGS =0V,f =1MHz 180 pF 20 Switching characteristics (note 3) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time (note3) td(on) Turn-on rise time (note3) Turn-off delay time (note3) Turn-off fall time (note3) tr td(off) 5.0 VDS =480V,VGS =10V,ID =4.0A 10 nC 2.7 2.0 20 VDD=300V, VGS=10V, 10 RG=9.1Ω, ID =4.0A 40 tf ns 20 Notes : 1. L=30mH, IL=4 A, VDD=100V, RG=25Ω,Starting TJ=25℃. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. www.cj-elec.com 2 C,May,2016 Typical Characteristics Transfer Characteristics Output Characteristics 5 2.0 VDS=10V Pulsed Pulsed VGS= 6V 、8V、10V (A) 1.5 ID 3 DRAIN CURRENT DRAIN CURRENT ID (A) 4 VGS=5V 2 1.0 Ta=25℃ Ta=100℃ 0.5 1 VGS=4.5V 0 20 10 DRAIN TO SOURCE VOLTAGE 0.0 30 VDS 0 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE (V) VGS 7 RDS(ON)—— VGS RDS(ON) —— ID 10 4.0 Ta=25℃ 3.5 8 (V) Pulsed ID=2A Pulsed (W ) RDS(ON) VGS=10V ON-RESISTANCE (W ) 2.5 ON-RESISTANCE RDS(ON) 8 3.0 2.0 1.5 1.0 6 4 Ta=100℃ 2 Ta=25℃ 0.5 0.0 0.5 1.0 1.5 2.0 2.5 DRAIN CURRENT 3.0 ID 3.5 0 4.0 2 4 6 8 GATE TO SOURCE VOLTAGE (A) VGS 10 (V) Threshold Voltage IS —— VSD 5 4 Pulsed 4 ID=250uA VTH Ta=100℃ Ta=25℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 0.1 0.01 1E-3 0.0 0.4 0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.2 3 2 1 0 1.6 25 50 75 JUNCTION TEMPERATURE VSD (V) 3 100 TJ 125 (℃) C,May,2016 TO-251S Package Outline Dimensions Symbol A A1 b c D D1 D2 E e L L1 L2 Φ h V www.cj-elec.com Dimensions In Millimeters Max. Min. 2.200 2.400 0.860 1.160 0.660 0.860 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 10.400 11.000 3.300 3.700 1.600 REF. 1.100 1.300 0.000 0.300 5.350 REF. 4 Dimensions In Inches Min. Max. 0.087 0.094 0.034 0.046 0.026 0.034 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.409 0.433 0.130 0.146 0.063 REF. 0.043 0.051 0.000 0.012 0.211 REF. C,May,2016