ENS210
Relative Humidity and Temperature
Sensor with I²C Interface
General Description
The ENS210 integrates one relative humidity sensor and one
high-accuracy temperature sensor. The device is encapsulated
in a QFN4 package and includes an I²C slave interface for
communication with a master processor.
Ordering Information and Content Guide appear at end of
datasheet.
Key Benefits and Features
The benefits and features of ENS210, Relative Humidity and
Temperature Sensor with I²C Interface are listed below:
Figure 1:
Added Value of Using ENS210
Benefits
Features
• Ultra-accurate
• Temperature sensor (±0.2°C)
• Relative humidity sensor (±3.5%RH)
• Wide sensing range
• Temperature operating range (–40°C to 100°C)
• Relative humidity operating range (0% to 100%)
• Wide operating voltage
• 1.71V to 3.60V
• Small foot-print
• 2.0mm x 2.0mm x 0.75mm
• Industry standard two-wire interface
• Standard (100kbit/s) and fast (400kbit/s) I²C
• Low power
• Automatic low-power standby when not measuring
• Active current: 6.6μA @ 1Hz (1.8V)
• Standby current: 40nA
• Cost effective
• Digital pre-calibrated relative humidity and temperature
sensor
• Output directly in %RH and Kelvin
• Wide supply voltage range
• High reliability
• Long-term stability
ams Datasheet
[v1-02] 2018-Feb-19
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ENS210 − General Description
Applications
The ENS210 applications include:
• Portable devices for personal health and wellness
• Air cleaners, air purifiers and smart thermostats
• Weather stations
• Home appliances, such as washing machines, dishwasher,
and dryers
• Baby monitoring devices
• Transportation condition monitoring
Block Diagram
The internal block diagram of ENS210 is shown in Figure 2.
The I²C (communication) interface is connected to a controller
which acts as the command interpreter and as bus master of
the internal Advanced Peripheral Bus (APB). The memory and
sensors are slaves of the APB. The MTP memory is used to store
the sensor calibration parameters and unique ID.
To reduce power consumption the controller only powers the
measurement engine when needed.
Figure 2:
Functional Blocks of ENS210
Measurement engine
APB
MTP
memory
SCL
SDA
2
IC
interface
Controller
Temperature
sensor
Relative humidity
sensor
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ENS210 − Pin Assignments
Pin Assignments
The ENS210 pin assignment is described in Figure 3 and
Figure 4.
Figure 3:
Pin Diagram of ENS210
4
1
1
4
2
2
3
5
3
bottom view
top view
Figure 4:
Pin Description of ENS210
Pin Number
Pin Name
1
VDD
Supply voltage
2
SCL
I²C bus serial clock input (SCL)
3
SDA
I²C bus serial bidirectional data line (SDA)
4
VSS
Ground supply voltage; must be connected
5
VSS
Ground supply voltage; must be connected
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Description
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ENS210 − Absolute Maximum Ratings
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. These are stress
ratings only. Functional operation of the device at these or any
other conditions beyond those indicated under Electrical
Characteristics is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Figure 5:
Absolute Maximum Ratings of ENS210
Symbol
Parameter
Min
Max
Units
Comments
Electrical Parameters
VDD
Ilu
Supply voltage
-0.30
Latch-up current
4.60
V
100
mA
I/O; –0.5VDD < VI < 1.5VDD;
Tj < 125°C
Electrostatic Discharge
ESDHBM
Human body model;
all pins
±2000
V
JEDEC JS-001-2014
ESDCDM
Charged model device;
all pins
±500
V
JEDEC JS-002-2014
Operating and Storage Conditions
Maximum floor life time is
unlimited
MSL
Moisture sensitivity
level
TSTRG
Storage temperature
10
50
°C
RHNC
Relative humidity
(non-condensing)
20
60
%RH
TA
Operating ambient
temperature
–40
100
°C
HA
Operating ambient
relative humidity
0
100
%RH
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1
Preferably in sealed ESD bag
ams Datasheet
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ENS210 − Electrical Characteristics
Electrical Characteristics
All limits are guaranteed. The parameters with min and max
values are guaranteed with production tests or SQC (Statistical
Quality Control) methods.
Figure 6:
Electrical Characteristics
Symbol
VDD
Parameter
Supply voltage
Conditions
Max ripple 100mVPP
between 0-1MHz
Min
Typ (1)
Max
Unit
1.71
1.80 (3.30)
3.60
V
0.04 (0.5)
μA
Continuous run mode
58 (61)
μA
T and RH measurement
at 1Hz
6.6 (7.1)
μA
Standby state
IDD
Supply current
VIH
High-level input
voltage
0.7×VDD
VDD+0.5
V
VIL
Low-level input
voltage
–0.5
0.3×VDD
V
IOL
Low-level output
current
VOL = 0.4V
3
mA
VOL = 0.6V
6
mA
Note(s):
1. Values in parenthesis are for V DD=3.30 V.
2. TA = 25 °C and at 1.80 V supply voltage, unless otherwise specified
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ENS210 − Electrical Characteristics
I²C Timing Characteristics
ENS210 is compliant to the I²C standard; it supports standard
and fast mode as per I²C-bus specifications [UM10204, I²C-bus
specification and user manual, Rev. 6, 4 April 2014].
Temperature Sensor Characteristics
Figure 7:
Temperature Sensor Characteristics
Symbol
Trange
Tacc
Parameter
Conditions
Max
Unit
100
°C
TA = 0°C to 70°C; 3σ
0.2
°C
TA = −40°C to 100°C; 3σ
0.5
°C
Temperature range
Temperature accuracy (3)
Min
Typ
-40
Tres
Temperature resolution
tresp
Response time (2)
T step of 10°C by submersion
(in 0°C to 70°C range); τ63 % (1)
Trep
Temperature repeatability
3σ of consecutive
measurement values at
constant conditions
ΔT
Temperature long term
drift
0.016
°C
1
s
-0.1
°C
0.1
0.005
°C / year
Note(s):
1. 63% indicates that if a T step of 10°C, e.g. from 20°C to 30°C is made, it will take tresp seconds to reach 63% of that step.
2. In an application the temperature response time depends on heat conductivity of the sensor PCB.
3. Accuracy specifications are defined before soldering of the product in an application. Refer to ENS210 application note. Maximum
accuracy specification refers to 3 standard deviations assuming normal distribution of accuracy errors. After industrial calibration
of sensors, each sensor is tested on typical room conditions (e.g. 25°C 45%RH) and only sensors passing the verification qualify for
customer deliveries.
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ENS210 − Electrical Characteristics
Relative Humidity Sensor Characteristics
Figure 8:
Relative Humidity Sensor Characteristics
Symbol
Parameter
Hrange
Relative humidity
range
Hacc
Relative humidity
accuracy(3)
Conditions
Min
Typ
0
Max
Unit
100
%RH
TA = 25°C; RH = 20%RH to 80%RH;
excluding hysteresis
2.2
3.5
%RH
TA = 25°C; RH = 0%RH to 100%RH;
excluding hysteresis
4
5
%RH
Hres
Relative humidity
resolution
tresp
Response time(4)
RH step of 20%RH (in 40%RH to 80%RH
range); τ63%(1); 1m/s flow; TA = 25°C
Hhys
Relative humidity
hysteresis
TA = 25°C; RH = 20%RH to 90%RH;
30minutes exposure time
±0.7
%RH
Hrep
Relative humidity
repeatability
3σ of consecutive measurement values
at TA = 25°C and RH = 40%RH
±0.1
%RH
ΔH
Relative humidity
long term drift(2)
TA = 25°C
0.25
%RH /
year
0.03
3
%RH
5
s
Note(s):
1. 63% indicates that if an RH step of 20%RH is made, e.g. from 40%RH to 60%RH, it will take t resp seconds to reach 63% of that step.
2. Values are linearized averages over the lifetime of the product. Due to non-linear behavior a larger drift is expected in the first years.
3. Typical and maximum accuracy specification refers to, respectively, 2 and 3 standard deviations, assuming normal distribution of
accuracy error.
4. Device only performance. Application response time will depend on the design-in of the sensor
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ENS210 − Electrical Characteristics
System Timing Characteristics
Figure 9:
System Timing Characteristics
Symbol
tbooting
tconv
Parameter
Conditions
Typ
Max
Unit
1
1.2
ms
T only, single shot
(includes tbooting)
105
110
ms
T only, continuous
104
109
ms
T and RH, single shot
(includes tbooting)
122
130
ms
T and RH, continuous
225
238
ms
Booting time (1)
Min
Conversion time
Note(s):
1. Time in transient state booting (see Figure 10).
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ENS210 − Functional Description
Functional Description
The ENS210 integrates two sensor blocks: temperature and
relative humidity.
The device is normally in the standby state (Figure 10): the
measurement engine (see Figure 2) is unpowered, but the I²C
interface is operational and register write/read operation can
be performed. When a measurement command is given, the
device is first booting to active then it starts a measurement.
When the measurement is completed, the device returns to the
standby state. Since the I²C interface is operational in standby,
the measurement result can be read out.
Figure 10:
The ENS210 Power States
off
power on
on
standby
start measurement
or
disable low power
booting
power off
booted
active
measurement (s) completed and low power enabled
In continuous run mode (see Register SENS_RUN) or when low
power is disabled (see Register SYS_CTRL), the device remains
in active state.
The system power status is observable
(see Register SENS_STAT).
When powering up from off, the device is first booting to active,
but then falls immediately back to standby (since no
measurement is pending, and by default low power is enabled).
Note that the booting state is a transient state (the system
automatically transitions to the next state – active); the booting
time is given in Figure 9.
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ENS210 − Functional Description
Temperature Sensor
The temperature sensor block (Figure 11) determines the
ambient temperature, and outputs a calibrated value in Kelvin.
Figure 11:
Band Gap Temperature Measurement
The temperature is measured using a high-precision (12 bits)
zoom-ADC. The analog part is able to measure a strongly
temperature dependent X = V BE/ΔV BE. The X is found by first
applying a coarse search (successive approximation), and then
a sigma-delta in a limited range. The accuracy of the sensor is
shown in Figure 12. The conversion time is shown in Figure 9.
Figure 12:
Absolute Accuracy of the Temperature Sensor
Tacc (°C) ±0.5
±0.4
±0.3
3σ
±0.2
±0.1
0.0
-40
-20
0
+20
+40
+60
+80
+100
T (°C)
Note(s):
1. Dash line indicates natural physical behavior
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ENS210 − Functional Description
Relative Humidity Sensor
The relative humidity sensor as shown in Figure 13 determines
the ambient relative humidity and outputs a calibrated value in
%RH. The transducer (the C X on the top left) consists of a
large-area capacitor covered with a humidity-sensitive
material. The capacitance change is proportional to the change
in relative humidity, and has a linear dependence on
temperature. The capacitance is measured by a high-precision
2 nd order sigma-delta converter.
Figure 13:
Relative Humidity Sensor
relative humidity
in the environment
Sigma delta
modulator
CX
CREF
clock
bit stream
Decimation
filter
relative humidity
data
COFF
Timing and
control
configuration
Reading the relative humidity sensor will output a temperature
compensated value. The accuracy of the sensor is shown in
Figure 14. The conversion time is shown in Figure 9.
Figure 14:
Absolute Accuracy of the Relative Humidity Sensor at 25°C
RHacc (%RH) ±8
±6
Max
±4
Typ
±2
0
0
10
20
30
40
50
60
70
80
90
100
RH (%RH)
Note(s):
1. Dash line indicates natural physical behavior
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ENS210 − Functional Description
RH Accuracy at Various Temperatures
Typical RH accuracy at 25°C is defined in Figures 8 and 14. The
relative humidity accuracy has also been evaluated at
temperatures other than 25°C. The values shown in Figure 15
are an indication only, which may be important for your
application, but are not guaranteed.
Figure 15:
Accuracy of Relative Humidity Measurements (%RH) as Function of Temperature and Relative
Humidity
Absolute accuracy of relative humidity measurements (%RH)
100
± 4.5
90
± 5.5
± 3.5
80
± 4.5
Relative humidity (%RH)
70
60
± 2.5
± 3.5
50
40
30
± 3.5
± 4.5
20
± 3.5
10
± 5.5
± 4.5
0
0
+5
+15
+25
+35
+45
+55
+65
Temperature (°C)
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ENS210 − Functional Description
The I²C Interface
The ENS210 is an I²C slave device. The I²C interface supports
standard (100kbit/s) and fast (400kbit/s) mode.
Details on I²C protocol is according to I²C-bus specifications
[UM10204, I²C-bus specification and user manual, Rev. 6, 4 April
2014].
The device applies all mandatory I²C protocol features for
slaves: START, STOP, Acknowledge, 7-bit slave address. ENS210
does not use clock stretching.
None of the other optional features (10-bit slave address,
General Call, Software reset, or Device ID) are supported, nor
are the master features (Synchronization, Arbitration, START
byte).
I²C Operations on Registers
The ENS210 uses a register model to interact with it. This means
that an I²C master can write a value to one of the registers of a
slave, or that it can read from one of the registers of the slave.
In the ENS210, registers are addressed using 1 byte. The values
stored in a register are also 1 byte. However, the ENS210
implements “auto increment” which means that it is possible to
read, for example, two bytes by supplying the address of the
first byte and then reading two bytes.
Figure 16:
I²C Transaction Formats
(a)
slave
s address w a
reg addr a
(b)
s slave
address w a
reg addr a s slave
address r a
master
slave
reg val
start/stop s
p
a
reg val
a
reg val
reg val
read/write r
a
w
a p
reg val
a
ack/nack a
reg val
n p
n
A typical write transaction (see Figure 16 a) therefore has the
following format. The master initiates a transaction with a
so-called start condition “s”. This blocks the bus. Next, the
master sends the 7 bits ENS210 slave address followed by a 1 bit
direction (a 0 indicating write “w”). This byte is acknowledged
“a” by the slave. The master continues by sending the 8 bit
register address, which is acknowledged by the slave.
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ENS210 − Functional Description
This register address is stored in an internal CRA register
(“Current Register Address”). Finally, the master sends the 8 bit
register value, which is acknowledged by the slave (or nack’ed
when the address is not writeable). This value is written to the
register pointed to by the CRA, and the CRA is incremented by
1. Optionally, the master sends more 8 bit values, for the next
registers (auto incrementing CRA), each of which is (n)ack’ed by
the slave. Finally, the master generates a stop condition “p”,
unblocking the bus for other transactions.
A read transaction (see Figure 16 b) starts with a write (of the
register address), followed by a read. Consequently, it has the
following format. The master initiates the transaction with a
start condition. Next, the master sends the 7 bits ENS210 slave
address followed by a 1 bit direction (a 0 indicating write). This
byte is acknowledged by the slave. The master continues by
sending the 8 bit register address, which is acknowledged by the
slave and stored in the CRA register. Then the master sends
another start condition (a so-called repeated start condition,
keeping the bus blocked) followed by the 7 bits ENS210 slave
address followed by a 1 bit direction (a 1 indicating read “r”),
which is acknowledged by the slave. Next, the slave sends an 8
bits register value from the register pointed to by the CRA
register, and the CRA is incremented by 1. This byte is
acknowledged by the master. The master may read another 8
bits (auto increment feature) from the slave and acknowledge
that, until the master sends a nack “n” followed by a stop to
unblock the bus.
The ENS210 has an 8 bit address space, potentially addressing
256 registers. In reality, only few addresses are actually backed
by a register (see Register Overview). All other addresses are
reserved. A write transaction to a reserved (or read-only) register
causes a not-acknowledge. A read transaction for a reserved
register will return a 0.
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ENS210 − Functional Description
The I²C Slave Address
The ENS210 is an I²C slave device with a fixed slave address of
0x43. This means that the first byte after a start condition is
1000 011x, where x indicates the data direction, so 0x86 (1000
0110) for write and 0x87 (1000 0111) for read.
Sensor Control
The ENS210 contains a temperature and a relative humidity
sensor. Both sensors have two run modes: single shot run mode
and continuous run mode (enabled via SENS_RUN), see
Figure 17.
Figure 17:
The Sensor Modes
measuring
run
data
SENS_START
idle
SENS_START
single shot
completed in
single shot
invalid
SENS_RUN
completed
completed in
continuous
active
continuous
valid
When in the single shot run mode, starting a measurement is
under control of the master. By default a sensor is idle; it can be
started by writing a 1 to the corresponding bit in SENS_START.
After a start, the sensor stops when the measurement is
completed. Whether a sensor is idle or active measuring can be
detected by reading SENS_STAT. The measured values can be
obtained via their respective readout registers (T_VAL and H_
VAL). Writing to SENS_STOP in single shot has no effect.
When in the continuous run mode, the sensor performs
measurement after measurement after a 1 is written to the
corresponding bit in SENS_START. The result of each
measurement is stored in the aforementioned readout
registers. Writing 1 to the corresponding bit in SENS_STOP
stops the repeat cycle after the ongoing measurement is
completed.
The device operates in a step-wise way. In each step, either one
or both sensors are active. The step ends when the
measurement(s) are completed. For the next step, the device
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ENS210 − Functional Description
inspects its register settings, and either one or both sensors are
activated again, or there is no measurement request and the
device goes into standby (unless low power is disabled by SYS_
CTRL).
This means that multiple writes to START during a step have no
effect; the measurement is started once, and only a write to
START after the measurement has completed starts the
measurement again. Similarly, multiple writes to STOP have no
effect; when the measurement completes (in continuous mode)
the stop request is effectuated once. When START and STOP are
both requested, the measurement is started, and when
completed, stopped.
Sensor Timing
There are differences between single shot measurements and
continuous measurements. Figure 18 shows the timing of a
single shot T measurement.
Figure 18:
Single Shot Temperature Measurement
Measurement
tbooting
tconv
T_RUN
T_START
SYS_ACTIVE
T_STAT
T_STOP
T_VALID
T_DATA
update
Signal T_RUN is written low to select a single shot
measurement. Note that T_STOP is typically low (cleared by a
previous measurement), but its state is ignored in a single shot
measurement. T_START is written high to start measuring:
T_VALID in T_VAL is cleared and the device starts booting to
active. Once active SYS_ACTIVE goes high, and measurement
starts (T_STAT goes high).
When the measurement is completed (T_STAT goes low) the
data register (T_DATA) becomes valid (T_VALID goes high) and
the device goes back to standby (SYS_ACTIVE goes low).
The T_START and T_STOP are cleared.
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ENS210 − Functional Description
Figure 19:
Continuous Temperature Measurement
tbooting
Measurement
Measurement
Measurement
tconv
tconv
tconv
T_RUN
T_START
SYS_ACTIVE
T_STAT
T_STOP
T_VALID
T_DATA
update
update
update
Figure 19 shows the timing of a continuous T measurement.
Signal T_RUN is written high to select a continuous
measurement. Note that T_STOP is typically low (cleared by a
previous measurement), and it should stay low otherwise
continuous mode will stop after one measurement. T_START is
written high to start measuring: T_VALID in T_VAL is cleared and
the device starts booting to active. Once active SYS_ACTIVE goes
high, and measurement starts (T_STAT goes high).
When the first measurement is completed the data register
(T_DATA) becomes valid (T_VALID goes high), and the device
starts a new measurement. When the next measurement is
completed the data register (T_DATA) is updated; T_VALID stays
high. The device starts a new measurement.
At some point in time, a stop command is given (T_STOP is
written high). As soon as the current measurement is
completed, the data register (T_DATA) is once more updated
and the device goes back to standby (SYS_ACTIVE goes low).
The T_START and T_STOP are cleared.
Note that writes to the SENS_XXX registers only take effect
when no measurement is ongoing. In other words,
measurements are always sequential (so we can have three
types: T only, RH only or T and RH and changes occur when the
measurements are finished.
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ENS210 − Functional Description
The Sensor Readout Registers
The sensor readout registers (T_VAL and H_VAL) consist of three
parts: the actual measured data, a valid flag and a checksum
(see Figure 20). It is not mandatory to read the valid flag or the
checksum when reading the data.
Figure 20:
The Layout of the Sensor Readout Registers
crc payload
crc
23
valid
16 15
data
8
7
0
The checksum is a cyclic redundancy check over the data and
the valid flag; the stored checksum is the result of CRC-7
(polynomial x7+x3+1, see https://en.wikipedia.org/wiki/Cyclic_
redundancy_check) with 0x7F as initial vector (i.e. with all bits
flipped), see Computing CRC-7 for sample C code.
The valid flag is cleared when a measurement is started
(irrespective of the run mode). Once the measurement is
completed the valid flag is set. In continuous mode, a new
measurement is then started without clearing the valid flag; so
data is always valid after the first measurement (but it might be
several milliseconds old).
The data field is a 16 bits fixed point number, whose format and
unit depends on the sensor (see Register T_VAL and
Register H_VAL).
To ensure consistent view, these multi-byte readout registers
are double buffered. When the first byte (i.e. the byte with the
lowest register address) is read, the device copies all bytes from
the measurement registers to the I²C registers, and then the
value from the first I²C register is returned. Reads to the other
bytes of the multi-byte register (i.e. with higher register
addresses) are always directly from the I²C registers.
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ENS210 − Functional Description
Computing CRC-7
CRC algorithm uses a 7 bit polynomial (see lines 4, 5, and 6), and
a 17 bit payload. The crc7() function below uses the following
constants defining the CRC width, (the coefficients of the)
polynomial and the initial vector (start value of the CRC), and
some constants describing the payload data size.
//
7654 3210
// Polynomial
0b
//
0x
1000 1001 ~ x^7+x^3+x^0
8
9
#define CRC7WIDTH
7
// 7 bits CRC has polynomial of 7th order (has 8 terms)
#define CRC7POLY
0x89
// The 8 coefficients of the polynomial
#define CRC7IVEC
0x7F
// Initial vector has all 7 bits high
// Payload data
#define DATA7WIDTH 17
#define DATA7MASK
((1UL<<DATA7WIDTH)-1) // 0b 0 1111 1111 1111 1111
#define DATA7MSB
(1UL<<(DATA7WIDTH-1)) // 0b 1 0000 0000 0000 0000
The crc7(val) function returns the CRC-7 of a 17 bits value val.
// Compute the CRC-7 of 'val' (should only have 17 bits)
uint32_t crc7( uint32_t val ) {
// Setup polynomial
uint32_t pol= CRC7POLY;
// Align polynomial with data
pol = pol << (DATA7WIDTH-CRC7WIDTH-1);
// Loop variable (indicates which bit to test, start with highest)
uint32_t bit = DATA7MSB;
// Make room for CRC value
val = val << CRC7WIDTH;
bit = bit << CRC7WIDTH;
pol = pol << CRC7WIDTH;
// Insert initial vector
val |= CRC7IVEC;
// Apply division until all bits done
while( bit & (DATA7MASK<<CRC7WIDTH) ) {
if( bit & val ) val ^= pol;
bit >>= 1;
pol >>= 1;
}
return val;
}
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ENS210 − Functional Description
Suppose that T_VAL (address 30, 31 and 32) reads FD 49 0B,
corresponding (little endian) with the number 0B49FD, see
Figure 21. This leads to a CRC of 05 over a payload of 149FD. See
the next paragraph for details on processing this data.
Figure 21:
T_VAL Readout
Byte 32
23
Byte 31
16 15
0B
0
0
0
0
05
crc
8
49
1
0
1
7
Byte 30
0
FD
1
149FD
payload
Processing T_VAL and H_VAL
This paragraph shows a possible implementation of reading T
and RH.
The following fragment starts a combined single shot
measurement, waits and reads the measurement results. It
assumes the availability of i2c_reg_write and i2c_reg_read
primitives as well as a sleep routine (rtk_tsk_sleep). The format
specifiers in the printf’s are kept simple (%d instead of %ld or
even PRId32 from inttypes.h); they need adaptation on e.g. 16
bits platforms.
// Record I²C transaction status
bool i2c_ok= true;
// Start T and H (write 03 to register 22 in device 86)
uint8_t wbuf[]= { 0x03 };
i2c_ok &= i2c_reg_write(0x86, 0x22, wbuf, sizeof wbuf );
// Wait for measurements to complete
#define CONVERSION_TIME_T_H_MS 130
rtk_tsk_sleep(CONVERSION_TIME_T_H_MS);
// Read T and H (read 6 bytes starting from 0x30 in device 86)
uint8_t rbuf[6];
i2c_ok &= i2c_reg_read(0x86, 0x30, rbuf, sizeof rbuf );
// Extract T_VAL and H_VAL (little endian), assumes 32 bits wordsize
uint32_t t_val= (rbuf[2]<<16) + (rbuf[1]<<8) + (rbuf[0]<<0);
uint32_t h_val= (rbuf[5]<<16) + (rbuf[4]<<8) + (rbuf[3]<<0);
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ams Datasheet
[v1-02] 2018-Feb-19
ENS210 − Functional Description
The following fragment processes the T measurement as
available in t_val. It relies on the crc7() function as shown
previously.
// Extract (and print) the fields
uint32_t t_data = (t_val>>0 ) & 0xffff;
uint32_t t_valid= (t_val>>16) & 0x1;
uint32_t t_crc = (t_val>>17) & 0x7f;
printf("ENS210: T: %06x %02x %01x %04x\n", t_val, t_crc, t_valid, t_data );
// Check the CRC
uint32_t t_payl = (t_val>>0 ) & 0x1ffff;
bool t_crc_ok= crc7(t_payl)==t_crc;
// Convert to float (and print)
float TinK = (float)t_data / 64; // Temperature in Kelvin
float TinC = TinK - 273.15;
// Temperature in Celsius
float TinF = TinC * 1.8 + 32.0; // Temperature in Fahrenheit
printf("ENS210: T: (i2c=%d crc=%d valid=%d) %5.1fK %4.1fC %4.1fF\n", i2c_ok, t_crc_ok, t_valid, TinK, TinC, TinF );
The following fragment processes the RH measurement as
available in h_val. It is similar to the t_val processing.
// Extract (and print) the fields
uint32_t h_data = (h_val>>0 ) & 0xffff;
uint32_t h_valid= (h_val>>16) & 0x1;
uint32_t h_crc = (h_val>>17) & 0x7f;
printf("ENS210: H: %06x %02x %01x %04x\n", h_val, h_crc, h_valid, h_data );
// Check the CRC
uint32_t h_payl = (h_val>>0 ) & 0x1ffff;
bool h_crc_ok= crc7(h_payl)==h_crc;
// Convert to float (and print)
float H = (float)h_data/512;
// relative humidity (in %)
printf("ENS210: H: (i2c=%d crc=%d valid=%d) %2.0f%%\n", i2c_ok, h_crc_ok, h_valid, H );
If registers 30 to 35 would contain fd 49 0b 6c 2e f5 (i.e. T_VAL
in blue and H_VAL in green) the code would print
ENS210: T: 0b49fd 05 1 49fd
ENS210: T: (i2c=1 crc=1 valid=1) 296.0K 22.8C 73.0F
ENS210: H: f52e6c 7a 1 2e6c
ENS210: H: (i2c=1 crc=1 valid=1) 23%
ams Datasheet
[v1-02] 2018-Feb-19
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ENS210 − Functional Description
Reading PART_ID and UID
The first 2 registers (PART_ID and UID) are only available in
active state. There are two ways to read them:
• Dedicated read action
• Disable low power (set LOW_POWER to 0)
• Wait for t booting to get into active state
(check SYS_ACTIVE to be 1)
• Read the ID register(s)
• Re-enable low power (set LOW_POWER to 1)
• Piggybacking on a measurement
• Start a measurement (write 0b01, 0b10, or 011 to
SENS_START)
• Wait for t booting to get into active state
(check SYS_ACTIVE to be 1)
• Read the ID register(s)
• Ensure the device is still in active state
(check SYS_ACTIVE to be 1)
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ams Datasheet
[v1-02] 2018-Feb-19
ENS210 − Register Description
Register Description
This section describes the I²C registers of the ENS210.
Register Overview
Note that some registers are actually spread over multiple
addresses. For example, T_VAL at address 30 is spread over 3
addresses (its “Size” is 3). This could be rephrased as follows:
there are three registers T_VAL0, T_VAL1, and T_VAL2 at
addresses 30, 31, and 32 respectively.
Figure 22:
Register Overview
Address
Name
Size
Access
0x00
PART_ID
2
Read (active only)
0x02
<unused>
2
Read
0x04
UID
8
Read (active only)
0x0C
<reserved>
4
0x10
SYS_CTRL
1
Read/Write
0x11
SYS_STAT
1
Read
0x12
<reserved>
14
0x21
SENS_RUN
1
Read/Write
0x22
SENS_START
1
Write
Start measurement
0x23
SENS_STOP
1
Write
Stop continuous measurement
0x24
SENS_STAT
1
Read
Sensor status (idle or measuring)
0x25
<reserved>
11
0x30
T_VAL
3
Read
Temperature readout
0x33
H_VAL
3
Read
Relative humidity readout
0x36
<reserved>
202
ams Datasheet
[v1-02] 2018-Feb-19
Description
Identifies the part as ENS210
Unique identifier
System configuration
System status
The run mode (single shot or continuous)
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ENS210 − Register Description
Detailed Register Description
Register PART_ID (Address 0x00)
This 2 byte register identifies the part number in little endian
(ENS210). This register is only available in active state;
see Reading PART_ID and UID for instructions of reading it.
Figure 23:
Register PART_ID
Address 0x00
PART_ID
Bits
Field Name
Default
Access
15:0
PART_ID
0x0210
Read
Field Description
Identifies this device as an ENS210
Register UID (Address 0x04)
This 8 byte register uniquely identifies a single device among
all ENS210 devices. This register is only available in active state;
see Reading PART_ID and UID for instructions of reading it.
Figure 24:
Register UID
Address 0x04
UID
Bits
Field Name
Default
Access
63:0
UID
Varies
Read
Field Description
Unique device id
Register SYS_CTRL (Address 0x10)
This 1 byte register controls the system.
Figure 25:
Register SYS_CTRL
Address 0x10
SYS_CTRL
Bits
Field Name
Default
Access
7
RESET
0
Write
6:1
<reserved>
0b000000
Read/Write
Keep to 0’s
Read/Write
Controls the automatic low power.
0: Disabled (device stays in active)
1: Enabled (device goes to standby when
measurement complete)
0
LOW_POWER
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0b1
Field Description
Write 1 to reset the device
ams Datasheet
[v1-02] 2018-Feb-19
ENS210 − Register Description
Register SYS_STAT (Address 0x11)
This 1 byte register indicates the system status.
Figure 26:
Register SYS_STAT
Address 0x11
SYS_STAT
Bits
Field Name
Default
Access
Field Description
7:1
<reserved>
0b0000000
Read
Reads 0’s
0
SYS_ACTIVE
0b1
Read
The system power state
0: System is in standby or booting state
1: System is in active state
Register SENS_RUN (Address 0x21)
This 1 byte register configures the run modes (single shot or
continuous) of the sensors.
Figure 27:
Register SENS_RUN
Address 0x21
SENS_RUN
Bits
Field Name
Default
Access
7:2
<reserved>
0b000000
Read/Write
Keep to 0’s
Read/Write
The run mode of the relative humidity sensor
0: Relative humidity sensor operates in single shot
mode
1: Relative humidity sensor operates in
continuous mode
Read/Write
The run mode of the temperature sensor
0: Temperature sensor operates in single shot
mode
1: Temperature sensor operates in continuous
mode
1
0
H_RUN
T_RUN
ams Datasheet
[v1-02] 2018-Feb-19
0b0
0b0
Field Description
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ENS210 − Register Description
Register SENS_START (Address 0x22)
This 1 byte register starts a measurement for the sensors.
Figure 28:
Register SENS_START
Address 0x22
SENS_START
Bits
Field Name
Default
Access
Field Description
7:2
<reserved>
0b000000
Read/Write
Keep to 0’s
1
H_START
0b0
Read/Write
Write a 1 to start a relative humidity sensor
measurement
Writing 0 has no effect (helps in multiple access)
0
T_START
0b0
Read/Write
Write a 1 to start a temperature sensor
measurement
Writing 0 has no effect (helps in multiple access)
Register SENS_STOP (Address 0x23)
This 1 byte register stops a continuous measurement for the
sensors.
Figure 29:
Register SENS_STOP
Address 0x23
SENS_STOP
Bits
Field Name
Default
Access
7:2
<reserved>
0b000000
Write
Write 0’s
1
H_STOP
0b0
Write
Write a 1 to stop a continuous relative humidity
sensor measurement
Writing 0 has no effect (helps in multiple access)
0
T_STOP
0b0
Write
Write a 1 to stop a continuous temperature sensor
measurement
Writing 0 has no effect (helps in multiple access)
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Field Description
ams Datasheet
[v1-02] 2018-Feb-19
ENS210 − Register Description
Register SENS_STAT (Address 0x24)
This 1 byte register indicates the measuring status (idle or
active) of the sensors.
Figure 30:
Register SENS_STAT
Address 0x24
SENS_STAT
Bits
Field Name
Default
Access
7:2
<reserved>
0b000000
Read
Write 0’s
Read
Indicates the measuring status of the relative
humidity sensor
0: Relative humidity sensor is idle (not measuring)
1: Relative humidity sensor is active measuring
Read
Indicates the measuring status of the temperature
sensor
0: Temperature sensor is idle (not measuring)
1: Temperature sensor is active measuring
1
H_STAT
0
T_STAT
0b0
0b0
Field Description
Register T_VAL (Address 0x30)
This 3 byte register contains the last measured temperature
data. Furthermore it has a data valid flag and a CRC over the
former two. Note that these bytes are double buffered; they are
latched in by accessing the first byte, see The Sensor Readout
Registers for details.
See Section Processing T_VAL and H_VAL for example code of
processing this register.
Figure 31:
Register T_VAL
Address 0x30
T_VAL
Bits
Field Name
Default
Access
23:17
T_CRC
-
Read
CRC over T_DATA and T_VALID
16
T_VALID
-
Read
Data valid indication (1 means T_DATA is valid)
15:0
T_DATA
-
Read
Last measured temperature, stored as a little
endian 16 bits unsigned value in 1/64 Kelvin
ams Datasheet
[v1-02] 2018-Feb-19
Field Description
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ENS210 − Register Description
Register H_VAL (Address 0x33)
This 3 byte register contains the last measured relative humidity
data. Furthermore it has a data valid flag and a CRC over the
former two. Note that these bytes are double buffered; they are
latched in by accessing the first byte, see The Sensor Readout
Registers for details.
See Processing T_VAL and H_VAL for example code of
processing this register.
Figure 32:
Register H_VAL
Address 0x33
H_VAL
Bits
Field Name
Default
Access
23:17
H_CRC
-
Read
CRC over H_DATA and H_VALID
16
H_VALID
-
Read
Data valid indication (1 means H_DATA is valid)
15:0
H_DATA
-
Read
Last measured relative humidity, stored as a little
endian 16 bits unsigned value in 1/512%RH
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Field Description
ams Datasheet
[v1-02] 2018-Feb-19
ENS210 − Application Information
Application Information
Typical Application
Figure 33 shows a typical application.
Figure 33:
ENS210 Typical Application
VDD
R
VDD
R
power supply
SCL
1
2
Master
ENS210
SDA
VSS
0.1μF
3
4
VSS
5
VSS
ground
ams Datasheet
[v1-02] 2018-Feb-19
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ENS210 − Application Information
Recommended Operating Conditions
The recommended temperature and relative humidity
operating range for the ENS210 is 5°C to 60°C and 20%RH to
80%RH, see Figure 34. Long term exposure outside these
recommended operating conditions may temporarily offset the
relative humidity readout.
After such exposure, the device will slowly return to its accuracy
limits at 25°C (can be matter of hours or weeks, depending on
stress conditions). Re-conditioning (bake + hydration) will
accelerate kinetics of returning to its accuracy limits at 25°C.
Prolonged exposure to extreme conditions may accelerate drift,
which might not be fully recoverable: e.g. after 96h at
85°C/85%RH offset can be around + 6%RH.
Figure 34:
Recommended Operating Conditions
RH (%RH) 100
80
60
40
20
0
-40
-20
0
+20
+40
+60
+80
+100
T (°C)
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ENS210 − Soldering & Storage Information
Soldering & Storage
Information
Soldering
The ENS210 uses a cavity package. This package can be
soldered using a standard reflow process in accordance with
IPC/JEDEC J-STD-020D. See picture below.
Figure 35:
Soldering Recommendations
The detailed settings for the reflow profile can be derived from
the table below.
Figure 36:
Soldering Recommendations Table
Reflow Profile Settings
ams Datasheet
[v1-02] 2018-Feb-19
TP
260°C
tP (time within 5°C of TP)
20-40 seconds
TL
217°C
tL
60-150 seconds
Tsmax
200°C
Tsmin
150°C
tS (preheat)
60 to 180 seconds
t 25°C to Peak
8 minutes max.
ramp up
3°C/second max.
ramp down
6°C/second max.
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ENS210 − Soldering & Storage Information
It is recommended to use a no-clean solder paste for soldering
the sensor component on a PCB. There should not be any board
wash process, to prevent the sensor area to get in contact with
cleaning agents or other liquid materials.
The recommended ENS210 landing pattern can be found in the
drawing below in blue. A 100μm thick stencil can be used and
the stencil apertures are indicated in violet.
Figure 37:
Footprint Design
Note(s):
1. All dimensions are in millimeters
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ams Datasheet
[v1-02] 2018-Feb-19
ENS210 − Soldering & Storage Information
Storage and Handling
The ENS210 moisture sensitivity level is 1 (MSL1), which
corresponds to an unlimited out-of-bag lifetime at T = 30ºC;
RH = 85%RH maximum.
Precautions should be taken to prevent electrostatic discharge
(ESD) from damaging the sensor product.
All input and output pins are protected against electrostatic
discharge (ESD) under normal handling. When handling ensure
that the appropriate precautions are taken as described in
JESD625-A or equivalent standards.
The pick-up nozzle of the pick and place machine must be
positioned in such a way on the component that it fully covers
the cavity of the package, to avoid the leakage of air. Because
the ENS210 uses a cavity package, where the sensor is in direct
contact with the environment, physical contact with sensor
should be prevented at all times. If required, dust particles can
be removed by gently blowing air inside the cavity of the
package. Do not brush or wipe.
For proper operation of the product, exposure to Volatile
Organic Compounds (VOCs) should be avoided or limited as
much as possible. During manufacturing, transport and
storage, VOCs may originate from out-gassing of glues,
adhesive tapes and packaging materials such as bags and
foams.
In operation, VOCs might naturally be present in the
environment as vapors of, for example, ethanol, acetone and
isopropyl alcohol. It is important to realize that some of these
contaminants can cause offsets in the sensor reading that may
not recover naturally. The same holds for atmospheric
pollutants such as ammonia, nitric oxide and chlorine.
Offsets in the sensor reading due to exposure to contaminants
may be reversed by applying the recommended
Reconditioning Procedure (see below Reconditioning). Direct
contact with liquid cleaning agents, or rubbing the surface with
brushes or cotton-tip sticks, should be avoided at all times.
If needed, the sensor surface can be cleaned by gently blowing
with oil-free compressed air or washing in de-ionized water
might recover sensor readings.
The sensor is not damaged by water immersion or
condensation. The sensor will recover completely when the
water evaporates.
It is advised to avoid exposure to high intensity light for correct
sensor readings.
This can be achieved by appropriate mechanical design or
usage of a PTFE layer.
In addition it is advised to protect the device from direct
exposure to sunlight or other sources of UV radiation.
ams Datasheet
[v1-02] 2018-Feb-19
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ENS210 − Soldering & Storage Information
Reconditioning
The procedures indicated below accelerate the reconditioning
of the sensor back to its calibrated state.
After Soldering
After soldering according to Figure 35, RHS reading may show
an offset of -2%RH compared to its calibrated value. This offset
will slowly disappear if the device is exposed to normal ambient
conditions (e.g. T = 25ºC, RH = 45%RH, for a week). To accelerate
return to its initial calibrated state, we recommend to expose
devices to 25ºC and 75%RH for 12 hours. This would reduce the
time it has to recover at normal ambient conditions before
usage.
After Extreme Conditions
If the device is exposed to conditions outside the “specified safe
operating range” for long time, RH reading may show an offset
compared to its calibrated value.
The following procedure accelerates the reconditioning of the
sensor back to its calibrated state:
• A mild baking step at 105ºC for 12 hours, to evaporate the
contaminant.
• A hydration step at 25ºC and 75%RH for 12 hours, to
rehydrate the sensor material.
• A soak step at normal ambient conditions
(e.g. 23ºC ± 3ºC, 35-55%RH) for 24 hours.
Page 34
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ams Datasheet
[v1-02] 2018-Feb-19
ENS210 − Package Drawings & Markings
Package Drawings & Markings
The ENS210 has QFN4 package: plastic thermal enhanced very
thin small outline package; no leads; 4 terminals; body
2.0 x 2.0 x 0.75mm, see Figure 38.
Figure 38:
Package Outline
RoHS
Green
Note(s):
1. Dimensioning and tolerancing conform to ASME Y14.5M-1994.
2. All dimensions are in millimeters. Angles are in degrees.
3. Dimension b applies to metallized terminal and is measured between 0.15mm and 0.30mm from terminal tip.
4. Unilateral coplanarity applies to the exposed heat sink slug as well as the terminal.
5. N is the total number of terminals.
ams Datasheet
[v1-02] 2018-Feb-19
Page 35
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ENS210 − Package Drawings & Mark ings
Marking Information
Figure 39:
Marking of ENS210
Page 36
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ams Datasheet
[v1-02] 2018-Feb-19
ENS210 − Ordering & Contact Information
Ordering & Contact Information
Figure 40:
Ordering Information
Ordering
Code
Package
Marking
Description
Delivery
Form
Delivery
Quantity
ENS210-LQFM
QFN4
210
Plastic thermal enhanced very thin
small outline package; no leads;
4 terminals; body 2.0 x 2.0 x 0.75 mm
7” Tape & Reel
in dry pack
3500
pcs/reel
Buy our products or get free samples online at:
www.ams.com/ICdirect
Technical Support is available at:
www.ams.com/Technical-Support
Provide feedback about this document at:
www.ams.com/Document-Feedback
For further information and requests, e-mail us at:
[email protected]
For sales offices, distributors and representatives, please visit:
www.ams.com/contact
Headquarters
ams AG
Tobelbader Strasse 30
8141 Premstaetten
Austria, Europe
Tel: +43 (0) 3136 500 0
Website: www.ams.com
ams Datasheet
[v1-02] 2018-Feb-19
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ENS210 − RoHS Compliant & ams Green Statement
RoHS Compliant & ams Green
Statement
RoHS: The term RoHS compliant means that ams AG products
fully comply with current RoHS directives. Our semiconductor
products do not contain any chemicals for all 6 substance
categories, including the requirement that lead not exceed
0.1% by weight in homogeneous materials. Where designed to
be soldered at high temperatures, RoHS compliant products are
suitable for use in specified lead-free processes.
ams Green (RoHS compliant and no Sb/Br): ams Green
defines that in addition to RoHS compliance, our products are
free of Bromine (Br) and Antimony (Sb) based flame retardants
(Br or Sb do not exceed 0.1% by weight in homogeneous
material).
Important Information: The information provided in this
statement represents ams AG knowledge and belief as of the
date that it is provided. ams AG bases its knowledge and belief
on information provided by third parties, and makes no
representation or warranty as to the accuracy of such
information. Efforts are underway to better integrate
information from third parties. ams AG has taken and continues
to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or
chemical analysis on incoming materials and chemicals. ams AG
and ams AG suppliers consider certain information to be
proprietary, and thus CAS numbers and other limited
information may not be available for release.
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ams Datasheet
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ENS210 − Copyrights & Disclaimer
Copyrights & Disclaimer
Copyright ams AG, Tobelbader Strasse 30, 8141 Premstaetten,
Austria-Europe. Trademarks Registered. All rights reserved. The
material herein may not be reproduced, adapted, merged,
translated, stored, or used without the prior written consent of
the copyright owner.
Devices sold by ams AG are covered by the warranty and patent
indemnification provisions appearing in its General Terms of
Trade. ams AG makes no warranty, express, statutory, implied,
or by description regarding the information set forth herein.
ams AG reserves the right to change specifications and prices
at any time and without notice. Therefore, prior to designing
this product into a system, it is necessary to check with ams AG
for current information. This product is intended for use in
commercial applications. Applications requiring extended
temperature range, unusual environmental requirements, or
high reliability applications, such as military, medical
life-support or life-sustaining equipment are specifically not
recommended without additional processing by ams AG for
each application. This product is provided by ams AG “AS IS”
and any express or implied warranties, including, but not
limited to the implied warranties of merchantability and fitness
for a particular purpose are disclaimed.
ams AG shall not be liable to recipient or any third party for any
damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interruption of business or
indirect, special, incidental or consequential damages, of any
kind, in connection with or arising out of the furnishing,
performance or use of the technical data herein. No obligation
or liability to recipient or any third party shall arise or flow out
of ams AG rendering of technical or other services.
ams Datasheet
[v1-02] 2018-Feb-19
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ENS210 − Document Status
Document Status
Document Status
Product Preview
Preliminary Datasheet
Datasheet
Datasheet (discontinued)
Page 40
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Product Status
Definition
Pre-Development
Information in this datasheet is based on product ideas in
the planning phase of development. All specifications are
design goals without any warranty and are subject to
change without notice
Pre-Production
Information in this datasheet is based on products in the
design, validation or qualification phase of development.
The performance and parameters shown in this document
are preliminary without any warranty and are subject to
change without notice
Production
Information in this datasheet is based on products in
ramp-up to full production or full production which
conform to specifications in accordance with the terms of
ams AG standard warranty as given in the General Terms of
Trade
Discontinued
Information in this datasheet is based on products which
conform to specifications in accordance with the terms of
ams AG standard warranty as given in the General Terms of
Trade, but these products have been superseded and
should not be used for new designs
ams Datasheet
[v1-02] 2018-Feb-19
ENS210 − Revision Information
Revision Information
Changes from 1-00 (2016-Oct-24) to current revision 1-02 (2018-Feb-19)
Page
1-00 (2016-Oct-24) to 1-01 (2018-Jan-26)
Updated Applications
2
Updated Figure 8 and notes under it
7
Updated Figure 14
11
1-01 (2018-Jan-26) to 1-02 (2018-Feb-19)
Updated Figure 1
1
Updated Figure 6
5
Updated Figure 8
7
Updated Figure 9
8
Added RH Accuracy at Various Temperatures section
12
Updated text under The I²C Interface
13
Updated code under Processing T_VAL and H_VAL
20
Updated Figure 40
37
Note(s):
1. Page and figure numbers for the previous version may differ from page and figure numbers in the current revision.
2. Correction of typographical errors is not explicitly mentioned.
ams Datasheet
[v1-02] 2018-Feb-19
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ENS210 − Content Guide
Content Guide
Page 42
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1
1
2
2
General Description
Key Benefits and Features
Applications
Block Diagram
3
4
Pin Assignments
Absolute Maximum Ratings
5
6
6
7
8
Electrical Characteristics
I²C Timing Characteristics
Temperature Sensor Characteristics
Relative Humidity Sensor Characteristics
System Timing Characteristics
9
10
11
12
13
13
15
15
16
18
19
20
22
Functional Description
Temperature Sensor
Relative Humidity Sensor
RH Accuracy at Various Temperatures
The I²C Interface
I²C Operations on Registers
The I²C Slave Address
Sensor Control
Sensor Timing
The Sensor Readout Registers
Computing CRC-7
Processing T_VAL and H_VAL
Reading PART_ID and UID
23
23
24
24
24
24
25
25
26
26
27
27
28
Register Description
Register Overview
Detailed Register Description
Register PART_ID (Address 0x00)
Register UID (Address 0x04)
Register SYS_CTRL (Address 0x10)
Register SYS_STAT (Address 0x11)
Register SENS_RUN (Address 0x21)
Register SENS_START (Address 0x22)
Register SENS_STOP (Address 0x23)
Register SENS_STAT (Address 0x24)
Register T_VAL (Address 0x30)
Register H_VAL (Address 0x33)
29
29
30
Application Information
Typical Application
Recommended Operating Conditions
31
31
33
34
34
34
Soldering & Storage Information
Soldering
Storage and Handling
Reconditioning
After Soldering
After Extreme Conditions
ams Datasheet
[v1-02] 2018-Feb-19
ENS210 − Content Guide
ams Datasheet
[v1-02] 2018-Feb-19
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Package Drawings & Markings
Marking Information
37
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39
40
41
Ordering & Contact Information
RoHS Compliant & ams Green Statement
Copyrights & Disclaimer
Document Status
Revision Information
Page 43
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