CYSTEKEC MTB040P04N3 P-channel enhancement mode mosfet Datasheet

Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 1/ 9
CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
MTB040P04N3
BVDSS
-40V
ID@TA=25C, VGS=-10V
RDSON@VGS=-10V, ID=-2.5A
-3.2A
47mΩ (typ.)
RDSON@VGS=-4.5V, ID=-2A
57mΩ (typ.)
Features
• Advanced trench process technology
• Super high density cell design for extremely low on resistance
• Reliable and rugged
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
SOT-23
MTB040P04N3
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTB040P04N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB040P04N3
CYStek Product Specification
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 2/ 9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25C, VGS=-4.5V (Note 1)
Continuous Drain Current @TA=70C, VGS=-4.5V (Note 1)
Pulsed Drain Current
(Note 2)
Maximum Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
-40
±20
-3.2
-2.6
-30
1.25
0.01
-55~+150
ID
IDM
PD
Tj, Tstg
Unit
V
A
W
W/C
C
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s; 270C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max (Note)
Thermal Resistance, Junction-to-Case, max
Symbol
RθJA
RθJC
Limit
100
50
Unit
C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s ; 270C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTB040P04N3
Min.
Typ.
Max.
Unit
-40
-1
-
-0.02
47
57
7.4
-2.5
±100
-1
-10
62
75
-
V
V/C
V
nA
-
929
79
60
6.8
17
88.6
29.2
-
Test Conditions
S
VGS=0V, ID=-250µA
Reference to 25C, ID=-1mA
VDS=VGS, ID=-250µA
VGS=±20V, VDS=0V
VDS=-32V, VGS=0V
VDS=-32V, VGS=0V, Tj=70C
ID=-2.5A, VGS=-10V
ID=-2A, VGS=-4.5V
VDS=-10V, ID=-3A
pF
VDS=-20V, VGS=0V, f=1MHz
ns
VDS=-20V, ID=-2.5A, VGS=-10V, RG=6Ω
µA
m
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
-
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 3/ 9
20.6
2.8
3.6
-
nC
VDS=-20V, ID=-2.5A, VGS=-10V,
-0.82
9.5
4.9
-1
-
V
ns
nC
VGS=0V, ISD=-2.5A
IF=-2.5A, VGS=0V, dIF/dt=100A/µs
*Pulse Test : Pulse Width 300µs, Duty Cycle2%
Recommended Soldering Footprint
MTB040P04N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-ID, Drain Current (A)
25
-BVDSS, Normalized Drain-Source
Breakdown Voltage
30
-10V, -9V, -8V,-7V,-6V,-5V
-4V
20
-3.5V
15
10
-3V
5
VGS=-2.5V
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
100
1.2
RDS( on), Static Drain-Source On-State
Resistance(mΩ)
VGS=0V
-VSD, Source-Drain Voltage(V)
VGS=-4.5V
VGS=-10V
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
R DS(on) , Normalized Static Drain-Source
On-State Resistance
270
ID=-2.5A
210
180
150
120
90
60
30
0
0
MTB040P04N3
2
4
6
8
-VGS, Gate-Source Voltage(V)
4
6
-IS, Source Drain Current(A)
8
10
2
300
240
2
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1
10
1.8
VGS=-10V, ID=-2.5A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 47mΩ typ.
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(t h), Threshold Voltage(V)
Capacitance---(pF)
10000
Ciss
1000
Coss
100
Crss
1.2
1
ID=-1mA
0.8
0.6
ID=-250μA
0.4
10
0
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
35
-75 -50 -25
40
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=-20V
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Adm ittance(S)
10
1
0.1
VDS=-10V
Pulsed
TA=25°C
0.01
0.001
8
6
4
VDS=-32V
2
ID=-2.5A
0
0.01
0.1
1
-ID, Drain Current(A)
10
0
4
8
12
16
Qg, Total Gate Charge(nC)
20
24
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
4
100μs
10
RDS(ON)
Limited
1ms
1
10ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=100°C/W, Single Pulse
100ms
1s
DC
0.01
0.01
MTB040P04N3
0.1
1
10
-ID, Drain-Source Voltage(V)
100
-ID, Maxim um Drain Current(A)
100
-ID, Drain Current(A)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=-10V,RθJA=100°C/W
single pulse
0.5
0
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 6/ 9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
30
300
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
25
250
20
200
Power (W)
-ID, Drain Current (A)
VDS=-10V
15
150
10
100
5
50
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
TJ(MAX) =150°C
TA=25°C
RθJA=100°C/W
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=100°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB040P04N3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTB040P04N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTB040P04N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 9/ 9
SOT-23 Dimension
Marking:
TE
BFPF
XX
Date Code
Device Code
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032
0.0079
0.0118
0.0266
0.0335
0.0453
0.0830
0.1161
0.0098
0.0256
0.0118
0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB040P04N3
CYStek Product Specification