DMC3400SDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V(BR)DSS Q1 30 Q2 Features and Benefits RDS(ON) max ID max TA = +25°C 0.4Ω @ VGS = 10V 0.65A 0.7Ω @ VGS = 4.5V 0.52A 0.9Ω @ VGS = -10V -0.45A 1.7Ω @ VGS = -4.5V -0.33A Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) -30 Mechanical Data Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (Approximate) Motor Control Power Management Functions DC-DC Converters D2 D1 SOT363 Gate Protection Diode ESD PROTECTED Gate Protection Diode S1 Q1 N-CHANNEAL Top View D1 G2 S2 S1 G1 D2 G2 G1 S2 Q2 P-CHANNEAL Top View Pin out Ordering Information (Note 4) Part Number DMC3400SDW-7 DMC3400SDW-13 Notes: Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information CSI Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMC3400SDW Document number: DS37690 Rev. 1 - 2 Mar 3 CSI = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: B = 2014) M = Month (ex: 9 = September) YM NEW PRODUCT NEW PRODUCT Product Summary 2016 D Apr 4 May 5 2017 E Jun 6 1 of 9 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D February 2015 © Diodes Incorporated DMC3400SDW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) NEW PRODUCT NEW PRODUCT Continuous Drain Current (Note 6) VGS = 10V TA = +25C TA = +70C Value_Q1 30 ±20 0.65 0.50 0.4 4 ID IS IDM Value_Q2 -30 ±20 Units V V -0.45 -0.36 -0.35 -3 A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Steady State Steady State Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 0.31 406 0.39 319 126 -55 to +150 Units W °C/W W °C/W °C/W °C Electrical Characteristics – N Channel – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±16V, VDS = 0V VGS(TH) RDS(ON) 1.6 0.4 0.7 1.2 Ω VSD 0.2 0.3 0.8 V Static Drain-Source On-Resistance 0.8 - VDS = VGS, ID = 250μA VGS = 10V, ID = 0.59A VGS = 4.5V, ID = 0.2A VGS = 0V, IS = 0.23A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF - 55 8.5 6.5 92 0.6 1.4 0.2 0.1 3.8 3.5 25.2 18.8 - pF pF pF Ω nC nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time DMC3400SDW Document number: DS37690 Rev. 1 - 2 2 of 9 www.diodes.com V Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = VGS = 0V, f = 1.0MHz VDS = 10V, ID = 250mA VGS = 10V, VDS = 30V, ID = 100mA, RG = 1Ω February 2015 © Diodes Incorporated DMC3400SDW NEW PRODUCT NEW PRODUCT Electrical Characteristics – P Channel – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -24V, VGS = 0V VGS = ±16V, VDS = 0V VGS(TH) RDS(ON) -2.6 0.9 1.7 -1.2 Ω VSD 0.36 0.57 -0.8 V Static Drain-Source On-Resistance -1 - VDS = VGS, ID = -250μA VGS = -10V, ID = -0.42A VGS = -4.5V, ID = -0.2A VGS = 0V, IS = -0.23A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF - 54 10 8.3 240 0.6 1.3 0.2 0.2 5.7 8.8 35 19 - pF pF pF Ω nC nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = VGS = 0V, f = 1.0MHz VDS = -10V, ID = -0.24A VGS = -10V, VDD = -15V, ID = -0.5A, RG = 1Ω 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMC3400SDW Document number: DS37690 Rev. 1 - 2 3 of 9 www.diodes.com February 2015 © Diodes Incorporated DMC3400SDW Typical Characteristics - N-CHANNEL 1.5 1 VDS=5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.8 VGS=4.0V 0.9 VGS=3.0V VGS=4.5V 0.6 VGS=10V VGS=2.5V 0.3 0.6 0.4 TA=150℃ TA=125℃ 0.2 TA=-55℃ 0 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0 3 0.4 0.9 0.35 0.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA=25℃ TA=85℃ VGS=2.0V 0.3 VGS=4.5V 0.25 0.2 VGS=10V 0.15 0.1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 5 ID=590mA 0.7 0.6 0.5 0.4 0.3 0.2 0.05 0.1 0 0 ID=200mA 1 0 0.2 0.4 0.6 0.8 1 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 3 5 7 9 11 13 15 17 19 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 21 1.8 0.6 0.5 TA=150℃ TA=125℃ RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS= 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT NEW PRODUCT VGS=3.5V 1.2 0.4 TA=85℃ 0.3 TA=25℃ 0.2 TA=-55℃ 0.1 0 1.6 VGS=10V, ID=590mA 1.4 1.2 1 VGS=4.5V, ID=200mA 0.8 0.6 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMC3400SDW Document number: DS37690 Rev. 1 - 2 1 -50 4 of 9 www.diodes.com -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature 150 February 2015 © Diodes Incorporated DMC3400SDW 2 VGS(TH), GATE THESHOLD VOLTAGE (V) 0.6 RDS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω) VGS=4.5V, ID=200mA 0.4 0.3 0.2 VGS=10V, ID=590mA 0.1 1.8 1.6 ID=1mA 1.4 1.2 ID=250µA 1 0.8 0.6 0.4 0 -50 -25 0 25 50 75 100 125 -50 150 0 25 50 75 100 125 150 100 1 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS=0V 0.9 0.8 IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Theshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 0.7 0.6 0.5 0.4 TA=150℃ TA=85℃ 0.3 0.2 TA=25℃ TA=125℃ Ciss Coss 10 Crss TA=-55℃ 0.1 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) 0 1.5 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 10 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 6 VGS (V) NEW PRODUCT NEW PRODUCT 0.5 4 VDS=10V, ID=250mA 1 0.1 0.01 2 0 DC PW =10s PW =1s PW =100ms PW =10ms TJ(Max)=150℃ TA=25℃ PW =1ms VGS=10V Single Pulse PW =100μs DUT on 1*MRP Board 0.001 0 0.3 0.6 0.9 1.2 Qg (nC) Figure 11. Gate Charge DMC3400SDW Document number: DS37690 Rev. 1 - 2 1.5 5 of 9 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMC3400SDW Typical Characteristics - P-CHANNEL 1.5 1 0.9 VGS=-4.0V VGS=-3.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=-4.5V 0.9 VGS=-3.0V 0.6 VGS=-10V 0.3 VGS=-2.5V 0.8 0.7 0.6 0.5 0.4 0.3 TA=150℃ 0.2 VGS=-2.0V 0.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. Typical Output Characteristic TA=25℃ TA=-55℃ 0 0 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 14. Typical Transfer Characteristic 5 2 0.8 1.8 0.7 ID=-420mA 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA=85℃ TA=125℃ 0.1 0.6 VGS=-4.5V 0.5 0.4 0.3 VGS=-10V 0.2 1.4 1.2 1 0.8 0.6 0.4 0.2 ID=-200mA 0 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ID, DRAIN-SOURCE CURRENT (A) Figure 15. Typical On-Resistance vs. Drain Current and Gate Voltage 0 1 1.2 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 16. Typical Transfer Characteristic 20 VGS=- 4.5V TA=150℃ RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT NEW PRODUCT 1.2 VDS= -5V TA=125℃ 0.8 TA=85℃ 0.6 TA=25℃ 0.4 TA=-55℃ 0.2 0 1.6 1.4 VGS=-10V, ID=-420mA 1.2 1 VGS=-4.5V, ID=-200mA 0.8 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ID, DRAIN CURRENT (A) Figure 17. Typical On-Resistance vs. Drain Current and Temperature DMC3400SDW Document number: DS37690 Rev. 1 - 2 1 6 of 9 www.diodes.com -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 18. On-Resistance Variation with Temperature 150 February 2015 © Diodes Incorporated DMC3400SDW 2 VGS(TH), GATE THESHOLD VOLTAGE (V) 1 0.9 RDS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω) VGS=-4.5V, ID=-200mA 0.7 0.6 0.5 0.4 0.3 VGS=-10V, ID=-420mA 0.2 0.1 1.8 ID=-1mA 1.6 ID=-250µA 1.4 1.2 1 0 -50 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 19. On-Resistance Variation with Temperature -25 1 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 20. Gate Theshold Variation vs. Junction Temperature 100 f=1MHz 0.9 VGS=0V CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 0.8 0.7 0.6 0.5 0.4 TA=150℃ 0.3 0.2 TA=85℃ TA=25℃ TA=125℃ 0.1 TA=-55℃ Ciss Coss 10 Crss 0 1 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 21. Diode Forward Voltage vs. Current 1.5 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 22. Typical Junction Capacitance 10 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 6 VGS (V) NEW PRODUCT NEW PRODUCT 0.8 4 VDS=-10V, ID=-0.24A 1 DC 0.1 0.01 2 PW =10s PW =1s PW =100ms PW =10ms TJ(Max)=150℃ PW =1ms TA=25℃ VGS=10V PW =100µs Single Pulse DUT on 1*MRP Board 0.001 0 0 0.3 0.6 0.9 1.2 Qg (nC) Figure 23. Gate Charge DMC3400SDW Document number: DS37690 Rev. 1 - 2 1.5 7 of 9 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24. SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMC3400SDW 1 NEW PRODUCT NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE D=0.9 D=0.7 D=0.5 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=413℃/W Duty Cycle, D=t1/t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 25. Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf the for latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° All Dimensions in mm B C H K M J D F L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf the for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DMC3400SDW Document number: DS37690 Rev. 1 - 2 8 of 9 www.diodes.com February 2015 © Diodes Incorporated DMC3400SDW IMPORTANT NOTICE NEW PRODUCT NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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