MSP3V3, MSP5.0A www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Very low profile - typical height of 0.65 mm eSMP ® Series • Ideal for automated placement • Oxide planar chip junction • Uni-directional polarity only • Peak pulse power: 150 W (10/1000 μs) Top View • ESD capability: 15 kV (air), 8 kV (contact) Bottom View • Meets MSL level 1, per J-STD-020C, LF maximum peak of 260 °C MicroSMP • AEC-Q101 qualified • Not recommended for PCB bottom side wave mounting PRIMARY CHARACTERISTICS VWM 3.3 V to 5.0 V VBR 4.1 V to 7.07 V PPPM 150 W TJ max. 150 °C Polarity Uni-directional Package MicroSMP • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: MicroSMP Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for protecting sensitive equipment against transient overvoltages. Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Peak power dissipation with a 10/1000 μs waveform (fig. 1) PPPM Peak pulse current with a 10/1000 μs waveform IPPM VALUE UNIT (1)(2) 150 W (1) See next table A (2) Power dissipation TM = 120 °C PD 1.0 W Power dissipation TA = 25 °C PD (3) 0.5 W TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 1 (2) Mounted on 6.0 mm x 6.0 mm copper pads to each terminal (3) Mounted on minimum recommended pad layout Revision: 12-Jul-12 Document Number: 88486 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSP3V3, MSP5.0A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR AT IT (1) (V) DEVICE MARKING CODE MIN. MAX. TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE CURRENT IR AT VWM (μA) MAXIMUM VC AT IPPM MAXIMUM VC AT IPPM RD 10/1000 μs VC (V) IPPM (A) RD 8/20 μs RD () VC (V) IPPM (A) RD () MSP3V3 KC 4.10 5.10 1.0 3.3 200 7.6 19.7 0.127 11.5 87 0.074 MSP5.0A AE 6.40 7.07 10 5.0 100 9.2 16.3 0.131 13.4 75 0.085 Notes • To calculate maximum clamping voltage at surge current uses the following formula: VCL max. = RD x IPP + VBR max. (1) Pulse test: t 50 ms p THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance VALUE (1) UNIT 250 RJM (2) °C/W 30 Notes (1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R JA - junction to ambient (2) Units mounted on PCB with 6.0 mm x 6.0 mm copper pad areas; R JM - junction to mount IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C unless otherwise noted) STANDARD TEST TYPE AEC-Q101-001 IEC 61000-4-2 TEST CONDITIONS Human body model (contact mode) (2) C = 100 pF, R = 1.5 k Human body model (air discharge mode) (1) C = 150 pF, R = 330 SYMBOL VC CLASS VALUE H3B > 8 kV 4 > 15 kV Notes (1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV (2) System ESD standard ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MSP3V3-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel MSP3V3HM3/89A (1) 0.006 89A 4500 7" diameter plastic tape and reel MSP5.0A-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel 0.006 89A 4500 7" diameter plastic tape and reel MSP5.0AHM3/89A (1) Note (1) Automotive grade Revision: 12-Jul-12 Document Number: 88486 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSP3V3, MSP5.0A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 TJ = 25 °C Pulse Width (td) is defined as the Point Where the Peak Current decays to 50 % of IPPM tr = 10 μs tr = 8 μs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 td = 1000 μs td = 20 μs td 0 0 1.0 2.0 3.0 Measured at Zero Bias CJ - Junction Capacitance (pF) IPPM - Peak Pulse Current (% IRSM) 150 Measured at Stand-off Voltage, VWM TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 4.0 3 t - Time (ms) Fig. 1 - Pulse Waveform 4.5 5 5.5 6 1.2 Non-Repetitive Pulse Waveform Shown in Fig. 1 TA = 25 °C 10 1 0.1 TA = TM, Mounted on 6.0 mm x 6.0 mm Copper Pad PD - Power Dissipation (W) PPPM - Peak Pulse Power (kW) 4 Fig. 4 - Typical Junction Capacitance 100 0.24" x 0.24" (6.0 mm x 6.0 mm) Copper Pad Areas 1.0 0.8 0.6 Mounted on Minimum Recommende Pad Area 0.4 0.2 0.0 0.01 0.1 1 10 100 1000 0 10 000 25 75 50 100 125 150 175 td - Pulse Width (μs) Ambient Temperature (°C) Fig. 2 - Peak Pulse Power Rating Curve Fig. 5 - Power Dissipation Derating Curve 1000 100 Transient Thermal Impedance (°C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) 3.5 VWM - Reverse Stand-Off Voltage (V) 75 50 25 0 0 25 50 75 100 125 150 175 TJ - Initial Temperature (°C) Fig. 3 - Pulse Power or Current vs. Initial Junction Temperature Revision: 12-Jul-12 Junction to Ambient 100 10 0.01 0.1 1 10 100 1000 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Document Number: 88486 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSP3V3, MSP5.0A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP 0.059 (1.50) 0.043 (1.10) Cathode Band 0.055 (1.40) 0.047 (1.20) 0.030 (0.75) 0.022 (0.55) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) 0.030 (0.75) 0.022 (0.55) Mounting Pad Layout 0.079 (2.00) 0.029 (0.73) 0.025 (0.63) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) Revision: 12-Jul-12 0.032 (0.80) 0.032 (0.80) 0.020 (0.50) Document Number: 88486 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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