Diodes MMBTA56Q-13-F Pnp small signal transistor in sot23 Datasheet

MMBTA55 / MMBTA56
PNP SMALL SIGNAL TRANSISTOR IN SOT23
Features
Mechanical Data

Epitaxial Planar Die Construction

Case: SOT-23

Ideal for Low Power Amplification and Switching

Case Material: Molded Plastic, “Green” Molding Compound;

Complementary NPN Type: MMBTA05 / MMBTA06

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Moisture Sensitivity: Level 1 per J-STD-020

Halogen and Antimony Free. “Green” Device (Note 3)

Terminals: Finish-Matte Tin Plated Leads.


Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)

UL Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208
SOT23
Weight: 0.008 grams (Approximate)
C
E
C
B
B
E
Top View
Top View
Pin-Out
Symbolhematic
Device Symbol
Symbolhematic
Ordering Information (Notes 4 & 5)
Part Number
MMBTA55-7-F
MMBTA56-7-F
MMBTA56Q-7-F
MMBTA56Q-13-F
Notes:
Compliance
AEC-Q101
AEC-Q101
Automotive
Automotive
Marking
K2H
K2G
K2G
K2G
Reel size (inches)
7
7
7
13
Tape width (mm)
8
8
8
8
Quantity per reel
3,000
3,000
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
K2x = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
2016
D
2017
E
2018
F
Jan
1
Feb
2
Mar
3
Apr
4
MMBTA55/MMBTA56
Document number: DS30054 Rev. 12 - 2
2019
G
May
5
2020
H
Jun
6
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2021
I
Jul
7
2022
J
Aug
8
2023
K
Sep
9
2024
L
Oct
O
2025
M
Nov
N
2026
N
Dec
D
May 2015
© Diodes Incorporated
MMBTA55 / MMBTA56
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
VCBO
VCEO
VEBO
IC
MMBTA55
-60
-60
MMBTA56
-80
-80
-4.0
-500
Unit
V
V
V
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Symbol
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
PD
RθJA
RθJL
TJ,TSTG
Value
310
350
403
357
350
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
Value
Unit
JEDEC Class
ESD HBM
ESD MM
4,000
400
V
V
3A
C
6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBTA55/MMBTA56
Document number: DS30054 Rev. 12 - 2
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Thermal Characteristics and Derating Information
400
Thermal Resistance (°C/W)
Max Power Dissipation (W)
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
Temperature (°C)
350
300
250
200
D=0.5
150
100
D=0.1
Single Pulse
D=0.2
50
0
100µ
D=0.05
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Derating Curve
Max Power Dissipation (W)
10
Single Pulse. T amb=25°C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
MMBTA55/MMBTA56
Document number: DS30054 Rev. 12 - 2
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Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
MMBTA55
MMBTA56
MMBTA55
MMBTA56
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
MMBTA55
MMBTA56
Min
Max
Unit

V
IC = -100µA, IE = 0

V
IC = -1.0mA, IB = 0
BVEBO
-60
-80
-60
-80
-5.0
-4.0

ICBO

-100
nA
ICEX

-100
nA
IE = -100µA, IC = 0
VCB = -60V, IE = 0
VCB = -80V, IE = 0
VCE = -60V, IBO = 0V
VCE = -80V, IBO = 0V
hFE
100


VCE(SAT)
VBE(SAT)


-0.25
-1.2
V
V
fT
50

MHz
BVCBO
BVCEO
Test Condition
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Note:
IC = -10mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
IC = -100mA, IB = -10mA
IC = -100mA, VCE = -1.0V
VCE = -1.0V, IC = -100mA,
f = 100MHz
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBTA55/MMBTA56
Document number: DS30054 Rev. 12 - 2
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MMBTA55 / MMBTA56
Typical Electrical Characteristics
MMBTA55/MMBTA56
Document number: DS30054 Rev. 12 - 2
(@TA = +25°C, unless otherwise specified.)
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
H
K1
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
J
K
a
M
A
L
C
L1
B
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
Y
Z
C
X
MMBTA55/MMBTA56
Document number: DS30054 Rev. 12 - 2
E
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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Document number: DS30054 Rev. 12 - 2
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