JIEJIE MICROELECTRONICS CO. , Ltd JCT610/810 Series 10A SCRs Rev.3.0 DESCRIPTION: 2 JCT610/810 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. 12 12 JCTx10A provides insulation voltage rated at 2500V RMS and JCTx10F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. JCTx10A/JCTx10F series comply with UL standards (File ref: E252906). 3 1 TO-251 3 TO-220A Insulated 3 TO-252 1 2 3 TO-220B Non-Insulated K(1) G(3) 12 3 TO-220F Insulated A(2) MAIN FEATURES Symbol JCT610 JCT810 VDRM/ VRRM 600V 800V IT(RMS) 10A IGT ≤10mA ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM 600/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM 600/800 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V IT(RMS) 10 A Storage junction temperature range Operating junction temperature range RMS on-state current TEL：+86-513-83639777 TO-251/ TO-252 (TC=105℃) TO-220B(Non-Ins) (TC=110℃) - 1 / 6- http://www.jjwdz.com JCT610/810 Series JieJie Microelectronics CO. , Ltd TO-220A(Ins) / RMS on-state current TO-220F(Ins) (TC=85℃) Non repetitive surge peak on-state current (tp=10ms) IT(RMS) 10 A ITSM 120 A I2t 72 A2s Critical rate of rise of on-state current (IG=2×IGT) dI/dt 50 A/μs Peak gate current IGM 4 A PG(AV) 1 W PGM 5 W I2t value for fusing (tp=10ms) Average gate power dissipation Peak gate power ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol IGT VGT VGD Test Condition Unit VD=12V RL=33Ω VD=VDRM Tj=125℃ RL=3.3KΩ MIN. TYP. MAX. - - 10 mA - - 1.5 V 0.2 - - V IL IG=1.2IGT - - 25 mA IH IT=500mA - - 15 mA 50 - - V/μs dV/dt VD=2/3VDRM Gate Open Tj=125℃ STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM=20A tp=380μs VD=VDRM VR=VRRM TEL：+86-513-83639777 Value(MAX) Unit Tj=25℃ 1.55 V Tj=25℃ 5 μA Tj=125℃ 1 mA - 2 / 6- http://www.jjwdz.com JCT610/810 Series JieJie Microelectronics CO. , Ltd THERMAL RESISTANCES Symbol Parameter Rth(j-c) junction to case(AC) Value TO-220A(Ins)/ TO-220F(Ins) 4.8 TO-220B(Non-Ins) 1.2 TO-251/ TO-252 2.5 Unit ℃/W ORDERING INFORMATION J CT 6 10 B A:TO-220A(Ins) F:TO-220F(Ins) B:TO-220B(Non-Ins) H:TO-251 K: TO-252 JieJie Microelectronics Co.,Ltd SCRs 6:VDRM /VRRM ≥600V 8:VDRM /VRRM ≥800V IT(RMS):10A PACKAGE MECHANICAL DATA Dimensions Ref. E 3. Min. A C2 F L3 Φ ax M m 5m H D V1 L1 C3 L2 C TO-220F Ins Max. 4.80 0.173 0.80 0.83 0.029 0.75 0.019 Min. Typ. Max. 4.40 0.74 C 0.48 C2 2.40 2.70 0.094 0.106 C3 2.60 3.00 0.102 0.118 D 8.80 9.30 0.346 0.366 E 9.70 10.3 0.382 0.406 F 6.40 7.00 0.252 0.276 2.54 28.0 0.030 1.102 1.173 0.045 0.067 L3 3.30 0.130 V1 45° 45° - 3 / 6- 0.033 0.143 1.70 1.14 0.189 0.031 0.1 29.8 3.63 L1 L2 G Typ. A G B Inches B H TEL：+86-513-83639777 Millimeters http://www.jjwdz.com JCT610/810 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions Ref. 3 ax E m A M Millimeters Min. C2 H D V1 L3 F Φ m .8 L1 C3 L2 Max. 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.80 10.4 0.386 0.409 F 6.55 6.95 0.258 0.274 2.54 28.0 0.1 29.8 1.102 3.75 L2 1.14 L3 2.65 1.173 0.148 1.70 0.045 2.95 0.104 45° V1 TO-220A Ins Typ. 4.60 H C Min. 4.40 L1 B Inches Max. A G G Typ. 0.067 0.116 45° Dimensions Ref. mm .8 x3 E Ma Min. A C2 H D V1 L3 F Φ JIE C3 L1 Millimeters L2 TO-220B Non-Ins TEL：+86-513-83639777 Typ. Max. 4.40 4.60 0.173 0.181 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.60 10.4 0.378 0.409 F 6.20 6.60 0.244 2.54 28.0 0.260 0.1 29.8 1.102 3.75 L1 C Min. A H G Max. B G B Typ. Inches 1.173 0.148 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 V1 - 4 / 6- 45° 45° http://www.jjwdz.com JCT610/810 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions Ref. Millimeters A B2 D V1 H V1 L2 C2 V1 L1 L B3 C B A2 2.40 0.086 0.095 A2 0.90 1.20 0.035 0.047 B 0.55 0.65 0.022 0.026 B2 5.10 5.40 0.200 0.213 B3 0.76 0.85 0.030 0.033 Max. C 0.45 0.62 0.018 0.024 C2 0.48 0.62 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.70 0.252 2.30 0.264 0.091 H 16.0 17.0 0.630 0.669 L 8.90 9.40 0.350 0.370 L1 1.80 1.90 0.071 0.075 L2 1.37 1.50 0.054 4° V1 TO-251 Typ. 2.20 G G Inches Min. A E Typ. Max. Min. 0.059 4° Dimensions Ref. Millimeters E Min. 2.40 0.086 0.095 A2 0.03 0.23 0.001 0.009 B 0.55 0.65 0.022 0.026 B2 5.10 5.40 0.200 0.213 C 0.45 0.62 0.018 0.024 C2 0.48 0.62 0.019 0.024 D 6.00 6.20 0.236 0.244 A C 0.6 M IN A2 TEL：+86-513-83639777 V2 D V1 V1 L1 H L2 B V1 G E 6.40 6.70 0.252 0.264 A C2 Max. G 4.40 4.70 0.173 0.185 H 9.35 10.6 0.368 0.417 L1 1.30 1.70 0.051 0.067 L2 1.37 1.50 0.054 0.059 8° 0° 4° V1 TO-252 Typ. Max. 2.20 Min. B2 Typ. Inches V2 - 5 / 6- 0° 4° 8° http://www.jjwdz.com JCT610/810 Series JieJie Microelectronics CO. , Ltd FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 12 P(w) 15 TO-251/ TO-252 10 10 α=180° TO-220B (Non-Ins) TO-220A(Ins)/ TO-220F(Ins) 8 6 5 4 2 0 0 IT(RMS) (A) 4 6 2 8 Tc (℃) 0 0 10 FIG.3: Surge peak on-state current versus number of cycles 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 100 140 tp=10ms One cycle 120 Tj=125℃ 100 80 10 60 40 Tj=25℃ 20 0 1 10 Number of cycles 100 1 0 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 50A/μs) VTM (V) 3 2 4 5 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature 2 2 1 2 ITSM (A), I t (A s) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 3 3.0 10 2.5 ITSM 2.0 dI/dt 1.5 102 I2 t IGT IH&IL 1.0 0.5 10 0.01 tp(ms) 0.1 1 10 0.0 -40 Tj(℃) -20 0 20 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 5-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 6 / 6- http://www.jjwdz.com