IMBD4448 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified 1 • Base P/N-E3 - RoHS-compliant, commercial grade 2 • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART IMBD4448 ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS Single diode A3 Tape and reel VALUE UNIT IMBD4448-E3-08 or IMBD4448-E3-18 IMBD4448-HE3-08 or IMBD4448-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage SYMBOL VR 75 V VRM 100 V f 50 Hz IF(AV) 150 mA t < 1 s and TJ = 25 °C IFSM 500 mA Ptot 350 mW SYMBOL VALUE UNIT RthJA 450 K/W Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C Peak reverse voltage Rectified current (average) half wave rectification with resistive load (1) Surge forward current Power dissipation (1) THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature Note (1) Device on fiberglass substrate, see layout on next page. Rev. 1.6, 15-May-13 Document Number: 85732 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IMBD4448 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. IF = 5 mA VF 0.62 IF = 100 mA VF 1 V VR = 70 V IR 2500 nA VR = 70 V, Tj = 150 °C IR 50 μA VR = 25 V, Tj = 150 °C IR 30 μA VF = VR = 0 V CD 4 pF IF = 10 mA to iR = 1 mA, VR = 6 V, RL = 100 trr 4 ns Forward voltage Leakage current Diode capacitance Reverse recovery time TYP. MAX. UNIT 0.72 V Layout For RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10000 T j = 100 ° C 100 10 25 ° C 1 0.1 0.01 rf - Dynamic Forward Resistance (Ω) I F - Forward Current ( mA ) 1000 T j = 25 ° C f = 1 kHz 1000 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 18689 V F - Forward Voltage ( V ) Fig. 1 - Forward Current vs. Forward Voltage Rev. 1.6, 15-May-13 18662 10 1 0.01 0.1 1 10 IF - Forward Current (mA) 100 Fig. 2 - Dynamic Forward Resistance vs. Forward Current Document Number: 85732 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IMBD4448 Vishay Semiconductors CD (VR)/CD (0 V) - Relative Capacitance (pF) Ptot - Admissible Power Dissipation ( mW ) www.vishay.com 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160180 200 1.0 0.9 0.8 0.7 0 Tamb - Ambient Temperature ( °C ) 18663 T j = 25 ° C f = 1 MHz 1.1 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 2 4 6 8 10 VR - Reverse Voltage (V) 18664 Fig. 4 - Relative Capacitance vs. Reverse Voltage 100 Peak Forward Current (A) I FRM - Admissible Repetitive I 18709 10 ν = t p /T ν =0 tp 0. 1 T = 1/f p I FRM t T 0. 2 1 10 -5 0. 5 10 -4 10 -3 10 -2 10 -1 1 10 tp - Pulse Length (s) Fig. 5 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.6, 15-May-13 Document Number: 85732 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IMBD4448 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t 0.5 (0.020) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 1.6, 15-May-13 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Document Number: 85732 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000