TriQuint AP561-PCB900 0.7-2.9 ghz 8w hbt power amplifier Datasheet

AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Applications





Small Cells / Repeaters / DAS
3G / 4G Wireless Infrastructure
Wireless Backhaul
Portable Radios
LTE / WCDMA / CDMA
14 Pin 5x6 mm DFN Package
Product Features









Functional Block Diagram
700-2900 MHz
+39 dBm P1dB
+12 V Supply Voltage
-50 dBc ACLR @ 28dBm Pout
1.5% EVM @ 30 dBm Pout
13 dB Gain @ 2.6GHz
Fast Shut-Down Capability
Internal Active Bias and Temp Compensation
Lead-free / RoHS-compliant
Pin 1 Reference Mark
PIN_Vbias
1
NC
2
14 PIN_Vpd
NC
3
RFin
4
11 RFout/ Vcc
RFin
5
10
Rfout/ Vcc
RFin
6
9
Rfout/ Vcc
NC
7
8
NC
ACTIVE
BIAS
13 NC
12 NC
Backside Paddle - RF/DC GND
General Description
Pin Configuration
The AP561 is a high dynamic range broadband power
amplifier in a surface mount package. The single-stage
amplifier has 13 dB Gain, while being able to achieve
high performance for 0.7–2.9 GHz applications with up
to +39 dBm of compressed 1dB power.
The AP561 uses a high reliability +12V InGaP/GaAs
HBT process technology. The device incorporates
proprietary bias circuitry to compensate for variations in
linearity and current draw over temperature. The device
does not require any negative bias voltage; an internal
active bias allows the AP561 to operate directly off a
commonly used +12V supply and has the added feature
of a +5V power down control pin. RoHS-compliant
5x6mm DFN package is surface mountable to allow for
low manufacturing costs to the end user.
Pin No.
Label
1
2, 3, 7, 8, 12, 13
4, 5, 6
9, 10, 11
14
Backside paddle
PIN_VBIAS
N/C
RF IN
RF Output / VCC
PIN_VPD
RF / DC GND
Ordering Information
Part No.
Description
AP561-F
AP561-PCB900
AP561-PCB2140
AP561-PCB2500
0.7-2.9 GHz 12V 8W Power Amplifier
869-894 MHz Evaluation Board
2110-2170 MHz Evaluation Board
2.5-2.7 GHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 1 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Parameter
Rating
Storage Temperature
RF Input Power, CW, 50Ω, T=25°C
Supply Voltage (VCC)
BVcbo
Power Dissipation
−55 to 150°C
+33 dBm
+15 V
+35 V
14 W
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Min
Supply Voltage (VCC)
TCASE
Tj for >106 hours MTTF
Typ
Max Units
12.0
−40
V
°C
°C
+85
158
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, Temp= +25°C, using AP561-PCB2600 application circuit
Parameter
Operational Frequency Range
Test Frequency
Output Channel Power
Gain
Input Return Loss
Output Return Loss
Error Vector Magnitude
Collector Efficiency
RF Switching Speed
Output P1dB
Operating Current, ICC
Quiescent Current, ICQ
Reference Current, IREF
Thermal Resistance, θjc
Conditions
Min
Typ
700
Max
Units
2900
MHz
MHz
dBm
dB
dB
dB
%
%
ns
dBm
mA
mA
mA
°C/W
2600
+30
13.0
14.5
6.5
1.7
16.2
50
+39
510
300
10
See note 1.
See note 2.
Module (junction to case)
6.0
Notes:
1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels signal, 9.5 dB PAR @ 0.01%.
2. Switching speed: 50% TTL to 100/0% RF. Vpd used for device power down (low=RF off).
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 2 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Device Characterization
Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, ICQ = 300 mA (typ.), Temp= +25°C, calibrated to device pins
S(1,1)
AP561
S22
S(2,2)
Max
AP561Swp6GHz
0.8
0
2.
2.
0
6
0.
0.8
1.0
Swp Max
6GHz
6
0.
40
1.0
S11
Gain / Maximum Stable Gain
0.
4
0.
4
0
3.
20
4.
0
3.
0
4.
5.0
0.2
0.2
10.0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.2
0
-10.0
2
-0.
0
-4
.0
.4
-0
-2
-0.8
Swp Min
0.05GHz
Swp Min
0.05GHz
-1.0
-0
.6
.0
-2
-0.8
Frequency (GHz)
-1.0
6
-0
.6
4
.0
-3
.0
2
-3
.0
.4
-0
-40
0
-5.
2
-0.
DB(|S(2,1)|)
AP561
-4
.0
DB(GMax())
AP561
0
-20
-5.
0.4
10.0
0
-10.0
Gain (dB)
0
5.0
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in red.
S-Parameters
Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, Temp= +25°C, 50 Ohm system
Freq (GHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
300
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
2700
2900
3100
3300
3500
3700
3900
4100
4300
4500
-0.83
-0.43
-0.35
-0.32
-0.34
-0.40
-0.47
-0.53
-0.59
-0.87
-1.14
-1.58
-2.07
-2.11
-1.52
-0.93
-0.60
-0.44
-0.30
-0.20
-0.16
-0.14
-0.15
-0.13
-174.19
-177.42
179.26
177.35
175.28
173.11
170.97
168.26
165.56
161.87
158.99
157.33
158.08
161.67
163.86
162.94
161.26
159.75
157.96
156.27
154.67
152.82
150.80
148.32
27.09
22.26
14.06
9.81
7.08
5.19
3.82
2.80
2.18
2.75
2.84
3.04
3.08
2.27
0.21
-2.57
-5.57
-8.55
-11.15
-13.44
-15.57
-17.53
-19.35
-21.11
122.75
106.35
89.18
79.93
71.64
63.88
55.72
47.12
37.92
25.71
12.58
-4.10
-26.45
-53.16
-79.14
-100.12
-115.90
-127.57
-136.15
-143.55
-150.57
-157.27
-163.61
-170.25
-43.35
-43.10
-41.21
-40.63
-40.35
-40.26
-40.09
-39.83
-39.58
-38.56
-37.79
-37.20
-36.71
-36.83
-37.65
-38.71
-39.66
-40.18
-40.26
-40.26
-39.83
-39.91
-39.49
-39.09
29.12
8.71
1.08
0.69
3.54
-3.79
-9.55
-16.44
-23.59
-35.47
-49.59
-69.96
-98.60
-134.34
-170.26
157.51
133.27
115.97
102.36
94.11
85.11
78.44
72.37
66.71
-1.38
-1.82
-2.02
-2.10
-2.09
-1.99
-1.86
-1.78
-1.68
-1.67
-1.45
-1.07
-0.57
-0.20
-0.18
-0.38
-0.55
-0.68
-0.77
-0.84
-0.87
-0.87
-0.86
-0.89
-106.01
-138.64
-164.78
-172.01
-176.13
-177.89
-178.93
-179.77
179.34
177.40
176.17
174.50
171.36
166.20
160.52
155.92
152.79
150.56
148.63
147.06
145.70
144.40
143.38
142.13
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 3 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
AP561-PCB900 Evaluation Board (896−894 MHz)
Notes:
1.
2.
3.
4.
5.
6.
7.
See Evaluation Board PCB Information section for material and stack-up.
All components are of 0603 size unless stated on the schematic.
The right edge of C20 is placed at 153 mil from the AP561 RFin pin.
The right edge of C21 is placed at 55 mil from the AP561 RFin pin.
The right edge of C24 is placed at 230 mil from the AP561 RFin pin.
The left edge of C22 is placed at 78 mil from the AP561 RFout pin.
The left edge of L2 is placed at 135 mil from the AP561 RFout pin.
8. The left edge of C23 is placed at 265 mil from the AP561 RFout pin.
9. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur.
Bill of Material – AP561-PCB900
Reference Des.
Value
Description
N/A
U1
C12
C4, C11
C5, C18, C7
C13
R1
R7
R2
R8
C1
C20
C21
C22
C23, C24
L2
L1
FB1
D1
D2
N/A
N/A
0.1 uF
1000 pF
100 pF
10 uF
200 Ω
330 Ω
10 kΩ
51 Ω
22 pF
10 pF
1.5 Ω
3.0 pF
6.8 pF
1.5 nH
18 nH
N/A
N/A
N/A
Printed Circuit Board – FR4
0.7-2.9 GHz 8W Power Amplifier
CAP, 0603,10%, 50V, X7R
CAP, 0603, 5%, 50V, NPO
CAP, 0603, 5%, 50V, NPO
CAP, 1206, 10%, 15V, Tantalum
RES, 0805, 5%, 1/10W. Chip.
RES, 0603,5%, 1/10W, Chip
RES, 0603, 5%,1/16W, Chip
RES, 0603, 5%, 1/16W, Chip
CAP, 0603, 5%, 50V, NPO/COG
CAP, 0603, 2%, ACCU-P, 50V
RES, 0603,5%, 1/10W, Chip
CAP, 0603, ± 0.05pF, ACCU-P, 50V
CAP, 0603, ± 0.05pF, ACCU-P, 50V
IND, 0603, ±0.3nH
IND, 0805, 5%, ceramic core
Filter EMI Ferrite Bead
TVS Diode Array, 5V, SOT23, 2Ch
Diode TVS, 13V, 400W, 5% SMA
Datasheet: Rev B 09-17-13
© 2013 TriQuint
Manuf.
- 4 of 17 -
TriQuint
various
various
various
various
various
various
various
various
various
AVX
various
AVX
AVX
Toko
Coilcraft
various
On-Semiconductor
On-Semiconductor
Part Number
AP561-F
06035J100GBSTR
06035J3R0ABSTR
LL1608-FSL1N5S
0805HQ-18NXJC
SM05T1G
1SMA13AT3G
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Typical Performance – AP561-PCB900
Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C
Parameter
Units
Typical Values
Frequency
Gain
Input Return Loss
Output Return Loss
ACLR @ 29dBm Output Power [2]
IMD3 @ 29dBm Output Power [1]
Operating Current, ICC @ 29dBm Output Power [2]
Collector Efficiency @ 29dBm Output Power [2]
Output P1dB
869
15.4
18
9
-52
-46
470
14
39.2
880
15.2
15
10
-52
-46.5
465
14.5
39.1
894
15.0
13
11
-52
-47
460
14.7
38.9
MHz
dB
dB
dB
dBc
dBc
mA
%
dBm
Notes:
1. IMD3 is measured with 1 MHz tone spacing.
2. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability.
Performance Plots – AP561-PCB900
Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C
Gain vs. Frequency
17
Return Loss vs. Frequency
0
15
14
13
0.86
0.87
0.88
0.89
S22
S11
-5
-10
-15
0.88
0.89
0.90
20
22
Frequency (GHz)
ACLR vs. Output Power vs. Frequency
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
24
26
28
30
Output Power/Tone (dBm)
Efficiency vs. Output Power
20
Temp.=+25oC
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
-50
-60
0.87
Frequency (GHz)
-45
Temp.=+25oC
-55
-20
0.86
0.90
IMD3 vs. Output Power
Frequency : 880 MHz
CW Signal
-45
IMD3 (dBc)
Return Loss (dB)
Gain (dB)
16
-40
Temp : +25 C
Vpd = 5V
Temp : +25 C
Vpd = 5V
Collector Current vs. Output Power
600
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
Frequency : 880 MHz
550
Frequency : 880 MHz
869 MHz
880 MHz
894 MHz
-55
500
Temp.=+25oC
Icc (mA)
Efficiency (%)
ACLR (dBc)
15
-50
10
450
400
5
350
0
-60
20
22
24
26
Output Power (dBm)
Datasheet: Rev B 09-17-13
© 2013 TriQuint
28
30
300
20
22
24
26
Output Power (dBm)
- 5 of 17 -
28
30
20
22
24
26
28
30
Output Power (dBm)
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
R7
C23
C22
C20
L1
C18
R1
FB1
AP561-PCB2140 Evaluation Board (2110−2170 MHz)
Notes:
1. See Evaluation Board PCB Information section for material and stack-up.
2. All components are of 0603 size unless stated on the schematic.
3. The right edge of C20 is placed at 160 mil from the AP561 RFin pin.
4. The right edge of C21 is placed at 45 mil from the AP561 RFin pin.
5. The left edge of C22 is placed at 68 mil from the AP561 RFout pin.
6. The left edge of L2 is placed at 125 mil from the AP561 RFout pin.
7. The left edge of C23 is placed at 263 mil from the AP561 RFout pin.
8. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur.
9. The primary RF microstrip line is 50. The RF trace is cut at component C21 and L2 for this particular reference design.
Bill of Material – AP561-PCB2140
Reference Des.
Value
Description
N/A
U1
C12
C4,C11
C5
C13
R1
R7
R2
C1, C7, C18
C20
C21
C22
C23
L2
L1
FB1
D1
D2
N/A
N/A
0.1 uF
1000 pF
100 pF
10 uF
200 Ω
280 Ω
10 kΩ
22 pF
2.4 pF
6.8 pF
3.9 pF
2.0 pF
1.2 nH
18 nH
N/A
N/A
N/A
Printed Circuit Board – FR4
0.7-2.9 GHz 8W Power Amplifier
CAP, 0603,10%, 50V, X7R
CAP, 0603, 5%, 50V, NPO
CAP, 0603, 5%, 50V, NPO
CAP, 1206, 10%, 15V, Tantalum
RES, 0805,5%,1/10W. CHIP.
RES, 0603,5%, 1/10W, Chip
RES, 0603, 5%,1/16W, Chip
CAP, 0603, 5%, 50V, NPO/COG
CAP, 0603, ± 0.05 pF, ACCU-P, 50V
CAP, 0603, ± 0.1 pF, ACCU-P, 50V
CAP, 0603, ± 0.05pF, ACCU-P, 50V
CAP, 0603, ± 0.05pF, ACCU-P, 50V
IND, 0603, ±0.3nH
IND, 0805, 5%, ceramic core
Filter EMI Ferrite Bead
TVS Diode Array, 5V, SOT23, 2Ch
Diode TVS, 13V, 400W, 5% SMA
Datasheet: Rev B 09-17-13
© 2013 TriQuint
Manuf.
- 6 of 17 -
TriQuint
various
various
various
various
various
various
various
various
AVX
AVX
AVX
AVX
Toko
Coilcraft
various
On-Semiconductor
On-Semiconductor
Part Number
AP561-F
06035J2R4ABSTR
06035J6R8ABSTR
06035J3R9ABSTR
06035J2R0ABSTR
LL1608-FSL1N2S
0805HQ-18NXJC
SM05T1G
1SMA13AT3G
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Typical Performance – AP561-PCB2140
Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 370 mA (typ.), Temp=+25°C
Parameter
Units
Typical Values
Frequency
Gain
Input Return Loss
Output Return Loss
ACLR @ 28dBm Output Power [2]
IMD3 @ 28dBm Output Power [1]
Operating Current, ICC @ 28dBm Output Power [2]
Collector Efficiency @ 28dBm Output Power [2]
Output P1dB
2110
12.4
10
6.3
-48
-42.7
565
9
39.3
2140
12.4
8
8
-48
-42.3
550
9.5
39.7
2170
12.3
6.5
11
-48
-43.8
525
10
39.7
MHz
dB
dB
dB
dBc
dBc
mA
%
dBm
Notes:
1. IMD3 is measured with 1 MHz tone spacing.
2. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability.
Performance Plots – AP561-PCB2140
Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 350 mA (typ.), Temp=+25°C
Gain vs. Frequency
14
13
11
10
-6
-9
-12
9
8
2.00
2.04
2.08
2.12
2.16
2.04
2.08
Frequency (GHz)
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
2.16
35
2.11
2.20
- 40°C
+25°C
+85°C
-50
28
30
32
22
Temp.=+25oC
2.17 GHz
26
Collector Current vs. Output Power
28
30
32
20
22
24
26
28
30
32
Output Power (dBm)
IMD3 vs. Output Power
-35
Frequency : 2.14 GHz
CW Signal
Frequency : 2.14 GHz
Temp.=+25oC
-40
IMD3 (dBc)
Icc(mA)
24
600
500
400
-45
-50
-55
300
-60
20
22
24
26
28
30
20
Output Power (dBm)
Datasheet: Rev B 09-17-13
© 2013 TriQuint
Frequency : 2.14 GHz
10
Output Power (dBm)
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
700
2.17
0
20
Output Power (dBm)
800
2.16
5
2.14 GHz
-60
26
2.15
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
-55
-60
2.14
15
2.11 GHz
24
2.13
Efficiency vs. Output Power
20
Efficiency (%)
ACLR (dBc)
-50
22
2.12
Frequency (GHz)
-45
20
37
Temp.=+25oC
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
-45
ACLR (dBc)
2.12
ACLR vs. Output Power vs. Frequency
-40
Frequency : 2.14 GHz
-55
38
Frequency (GHz)
ACLR vs. Temperature
-40
39
36
-15
2.00
2.20
Temp.=+25oC
40
S22
S11
P1dB (dBm)
Return Loss (dB)
-3
P1dB vs. Frequency
41
Temp : +25 C
Vpd = 5V
12
Gain (dB)
Return Loss vs. Frequency
0
Temp : +25 C
Vpd = 5V
22
24
26
28
30
Output Power/Tone (dBm)
- 7 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
AP561-PCB2350 Evaluation Board (2300−2400 MHz)
D2
D1
SM05T1G
R2
SMAJ33
C13
10 uF
6032
FB1
10K
C12
R7
0.1 uF
C11
1000 pF
FB1
C18
R1
R7
280
L1
R1
200
C5
C23
C22
C20
C4
100 pF
C18
1000 pF
22 pF
C1
J2
RF
Input
22 pF
R8
51
C21
C20
5.6 pF
1
2
3
4
5
6
7
U
1
AP561
2.0 pF
L1
18 nH
(0805)
14
13
12
11
10
9
8
Backside
Paddle
Ground
C22
C23
3.0 pF
1.0 pF
C7
J3
22 pF
RF
Output
Notes:
1. See Evaluation Board PCB Information section for material and stack-up.
2. All components are of 0603 size unless stated on the schematic.
3. The right edge of C20 is placed at 123 mil from the AP561 RFin pin.
4. The right edge of C21 is placed at 45 mil from the AP561 RFin pin.
5. The left edge of C22 is placed at 30 mil from the AP561 RFout pin.
6. The left edge of C23 is placed at 280 mil from the AP561 RFout pin.
7. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur.
8. The primary RF microstrip line is 50 . The RF trace is cut at component C21 for this particular reference design.
Bill of Material – AP561-PCB2350
Reference Des.
Value
Description
N/A
U1
C1, C7, C18
C5
C4, C11
C12
C13
R2
R7
R1
FB1
C22
C21
C23
C20
L1
R8
D1
D2
N/A
N/A
22 pF
100 pF
1000 pF
0.1 uF
10 uF
10 KΩ
280 Ω
200 Ω
N/A
3.0 pF
5.6 pF
1.0 pF
2.0 pF
18 nH
51 Ω
N/A
N/A
Printed Circuit Board – FR4
0.7-2.9 GHz 8W Power Amplifier
Cap, Chip, 0603, 50V, 5%, NPO
Cap, Chip, 0603, 50V, 5%, NPO
Cap, Chip, 0603, 50V, 5%, NPO
Cap, Chip, 0603, 50V, 5%, NPO
Cap, Tantalum, 6032, 35V, 10%
Resistor, Chip, 0603, 5%, 1/16W
Resistor, Chip, 0603, 1%, 1/16W
Resistor, Chip, 0805, 1%, 1/16W
Ferrite Bead, 100 MHz
Cap, Chip, 0603, 50V, +/-0.05pF
Cap, Chip, 0603, 50V, +/-0.05pF
Cap, Chip, 0603, 50V, +/-0.05pF
Cap, Chip, 0603, 50V, +/-0.05pF
Ind, Chip, 0805, 5%, Ceramic
Resistor, Chip, 0603, 1%, 1/16W
TVS Diode Array, 5V, SOT23, 2Ch
Diode TVS, 33V, 400W, 5% SMA
Datasheet: Rev B 09-17-13
© 2013 TriQuint
Manuf.
- 8 of 17 -
TriQuint
various
various
various
various
various
various
various
various
various
AVX
AVX
AVX
AVX
Coilcraft
various
On-Semiconductor
On-Semiconductor
Part Number
AP561-F
06035J3R0ABSTR
06035J5R6ABSTR
06035J1R0ABSTR
06035J2R0ABSTR
0805HQ-18NXJC
SM05T1G
1SMA33AT3G
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Typical Performance – AP561-PCB2350
Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 340 mA (typ.), Temp=+25°C
Parameter
Units
Typical Values
Frequency
Gain
Input Return Loss
Output Return Loss
EVM @ 28dBm Output Power [1]
ACLR @ 28dBm Output Power [2]
Operating Current, ICC @ 28dBm Output Power [2]
Collector Efficiency @ 28dBm Output Power [2]
Output P1dB
2300
13.6
21
6.6
1.6
-45.8
500
10.7
40.1
2350
13.6
23
7
1.4
-47.0
475
11.1
39.5
2400
13.2
14
7
1.1
-48.7
465
11.5
39.0
MHz
dB
dB
dB
%
dBc
mA
%
dBm
Notes:
1. 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels.10.2dB PAR @ 0.01%, 3.84 MHz Carrier BW
2. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability.
Performance Plots – AP561-PCB2350
Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 340 mA (typ.), Temp=+25°C
0
Temp : +25 C
Vpd = 5V
Return Loss (dB)
Gain (dB)
14
-5
12
10
Return Loss vs. Frequency
2.32
2.34
2.36
2.38
-10
S22
S11
-15
-20
2.32
2.34
Frequency (GHz)
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
2.36
2.38
37
35
2.30
2.40
2.32
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
2.34
2.36
2.38
2.40
Frequency (GHz)
Efficiency vs. Output Power
20
Temp.=+25oC
Collector Current vs. Output Power
600
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
Frequency : 2.35 GHz
550
Frequency : 2.35 GHz
15
-50
-55
500
Temp.=+25oC
Icc (mA)
Efficiency (%)
-45
ACLR (dBc)
38
Frequency (GHz)
ACLR vs. Frequency
-40
39
36
-30
2.30
2.40
Temp.=+25oC
40
-25
8
2.30
P1dB vs. Frequency
41
Temp : +25 C
Vpd = 5V
P1dB (dBm)
Gain vs. Frequency
16
10
450
400
5
350
2.3 GHz
2.35 GHz
2.4 GHz
-60
0
21
22
23
24
25
26
27
28
29
30
300
20
22
Output Power (dBm)
24
26
28
30
Output Power (dBm)
22
24
26
28
30
Output Power (dBm)
EVM vs. Output Power
2.5
802.16-2004 O-FDMA, 64QAM-1/2, 1024FFT, 20 symbols and 30 subchannels.
10.2 dB PAR @ 0.01%, 3.84 MHz Carrier BW
2.0
EVM (%)
20
1.5
1.0
0.5
2.3GHz
0.0
20
21
22
23
2.35GHz
24
25
26
2.4GHz
27
28
29
30
Output Power (dBm)
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 9 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
+
D2
R1
C15
C16
C17
C7
C18
C10
C28
C27
U1
AP561
C25
C26
C11
C8
C23
C24
J1-4 Vcc
C14
R2
D1
C6
C1
J1-3 GND
C12
C13
R3
R4
C2
J1-2 Vpd
DNP
AP561-PCB2500 Evaluation Board (2500−2700 MHz)
C20
Notes:
1.
2.
3.
4.
5.
6.
7.
See Evaluation Board PCB Information section for material and stack-up.
All components are of 0603 size unless stated on the schematic.
The right edge of C24 is placed at 85 mil from the AP561 RFin pin.
The left edge of C25 is placed at 55 mil from the AP561 RFout pin.
The left edge of C27 is placed at 175 mil from the AP561 RFout pin.
The DC bias feed is approximately a ¼ λ from output RF trace to C28.
Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur.
8. The primary RF microstrip line is 50. The RF trace is cut at component C21 for this particular reference design.
Bill of Material – AP561-PCB2500
Reference Des.
Value
Description
N/A
U1
C6, C16
C7, C10, C17
C8, C11, C18
C12
R1
R2
R3
C1, C20, C28
C23, C24, C25, C26
C2
C27
R4
D1
D2
N/A
N/A
0.1 uF
1000 pF
100 pF
10 uF
200 Ω
330 Ω
10 kΩ
22 pF
1.2 pF
10 pF
0.6 pF
3.9 Ω
N/A
N/A
Printed Circuit Board – Ultralam
0.7-2.9 GHz 8W Power Amplifier
CAP, 0603,10%, 50V, X7R
CAP, 0603, 5%, 50V, NPO
CAP, 0603, 5%, 50V, NPO
CAP, 1206, 10%, 15V, Tantalum
RES, 0805, 5%, 1/10W. Chip
RES, 0603,5%, 1/10W, Chip
RES, 0603, 5%,1/16W, Chip
CAP, 0603, 5%, 50V, NPO/COG
CAP, 0603, ± 0.05 pF, ACCU-P, 50V
CAP, 0603, 5%, 50V, NPO
CAP, 0603, ± 0.05 pF, ACCU-P, 50V
RES, 0603, 5%, 1/16W, Chip
TVS Diode Array, 5V, SOT23, 2Ch
Diode TVS, 13V
Datasheet: Rev B 09-17-13
© 2013 TriQuint
Manuf.
- 10 of 17 -
TriQuint
various
various
various
various
various
various
various
various
AVX
various
AVX
various
On-Semiconductor
On-Semiconductor
Part Number
AP561-F
06035J1R2ABSTR
06035J0R6ABSTR
SM05T1G
1SMA33AT3G
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Typical Performance – AP561-PCB2500
Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C
Parameter
Units
Typical Values
Frequency
Gain
Input Return Loss
Output Return Loss
EVM @ 30dBm Output Power [1]
Operating Current, ICC @ 30dBm Output Power [1]
Collector Efficiency @ 30dBm Output Power [1]
Output P1dB
2500
13.1
13
5.8
2.1
545
15.2
39.8
2600
13.0
14.5
6.5
1.7
510
16.2
39.0
2700
12.4
20
5
1.4
500
16.8
38.0
MHz
dB
dB
dB
%
mA
%
dBm
Notes:
1. 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels.PAR = 10.2dB@ 0.01%, 3.84 MHz Carrier BW
2. W-CDMA 3GPP, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01%, 3.84MHz BW
Performance Plots – AP561-PCB2500
Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C
Gain vs. Frequency
15
Return Loss vs. Frequency
0
40
P1dB (dBm)
12
11
S22
S11
-10
-15
-20
10
9
2.50
2.55
2.60
2.65
-25
2.50
2.70
2.55
2.60
2.65
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
20
Efficiency (%)
-45
-50
550
10
27
28
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
Frequency : 2.6 GHz
Temp=+25 C
450
350
2.7 GHz
-55
26
2.70
400
0
25
2.65
500
Temp.=+25oC
15
2.60
Collector Current vs. Output Power
600
Frequency : 2.6 GHz
5
2.6 GHz
2.55
Frequency (GHz)
Efficiency vs. Output Power
25
Temp.=+25oC
-40
2.5 GHz
32
2.50
2.70
Icc (mA)
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
36
Frequency (GHz)
ACLR vs. Output Power vs. Frequency
-35
38
34
Frequency (GHz)
ACLR (dBc)
Temp.=+25oC
-5
Return Loss (dB)
Gain (dB)
14
13
P1dB vs. Frequency
42
Temp : +25 C
Temp : +25 C
29
30
300
25
31
26
27
28
29
30
31
Output Power (dBm)
Output Power (dBm)
25
26
27
28
29
30
31
Output Power (dBm)
EVM vs. Output Power
3.0
Temp.=+25oC
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT,
20 symbols and subchannels.
PAR = 10.2dB @ 0.01%, 3.84 MHz Carrier BW
2.5
EVM (%)
2.0
1.5
1.0
0.5
2.5 GHz
2.6 GHz
2.7 GHz
0.0
25
26
27
28
29
30
31
Output Power (dBm)
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 11 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Reference Design 2500-2700 MHz: Changing Icq Biasing Configurations
The AP561 can be configured to operate with lower bias current by varying the bias-adjust resistor R2. (Error! Not a
valid bookmark self-reference.) The recommended circuit configuration has the device operating with a 300 mA as
the quiescent current (ICQ). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering ICQ will
improve upon the efficiency of the device, but degrade the EVM performance. Measured data shown in the plots
below represents the AP561-PCB2500 measured and configured for 2.6GHz applications. It is expected that variation
of the bias current for other frequency applications will produce similar performance results.
Table 1 : Reduced Current Operation
ICQ (mA)
300
280
260
240
220
200
R2 (Ω)
330
336
340
343
348
351
VPD (V)
5
5
5
5
5
5
IREF (V)
2.85
2.81
2.78
2.76
2.73
2.71
EVM vs. Output Average Power vs. Icq
240mA
300mA
3
2
1
0
20
22
24
26
28
Output Power (dBm)
200mA
260mA
25
Efficiency (%)
EVM (%)
4
220mA
280mA
Freq = 2.6 GHz, T= 25ºC
30
30
32
34
220mA
280mA
240mA
300mA
15
10
0
9
20
22
24
26
28
Output Power (dBm)
30
13
600
12
500
11
200mA
220mA
240mA
260mA
280mA
300mA
32
34
20
200mA
220mA
240mA
260mA
280mA
300mA
22
24
26
28
Output Power (dBm)
30
32
Icc vs. Output Average Power vs. Icq
Freq = 2.6 GHz, T= 25ºC
700
Icc (mA)
Gain (dB)
11
10
200mA
260mA
220mA
280mA
240mA
300mA
400
300
200
9
2.4
Datasheet: Rev B 09-17-13
© 2013 TriQuint
12
5
Vcc = 12V, T= 25ºC
10
13
20
Power Gain vs.Frequency vs. Icq
14
Freq = 2.6GHz, T= 25ºC
14
Gain (dB)
200mA
260mA
Power Gain vs. Output Average Power vs. Icq
Efficiency vs. Output Average Power vs Icq
Freq = 2.6 GHz, T= 25ºC
5
2.5
2.6
Frequency (GHz)
2.7
2.8
20
- 12 of 17 -
22
24
26
28
Output Power (dBm)
30
32
34
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Parameter Measurement Information: Switching Speed Test
Cable Length = Lx
Test Conditions:
Pulse Generator -ve
Vcc = +12V at 25°C
Output Power = +30dBm at 2.5 GHz
Rep Rate = 1 KHz, 50% duty cycle
Vpd amplitude = +5V
R2 = 200Ω, C9 = 12pF
(C10, C11 removed for best switching
performance)
Xtal Detector Voltage =15mV (square law)
Oscilloscope
+ve
Cable Length = Lx
Cable Length = Lx
CW Signal Source
Diode Detector
Vpd
Attenuator
AP56x Evaluation Brd
Test Result Waveforms:
Vpd = 5V
Vpd = 0V
RF On
Vpd = 5V
RF Off
Vpd = 5V
Delay = 50nS
Delay = 50nS
RF On
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 13 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Evaluation Board Bias Procedure
Following bias procedure is recommended to ensure proper functionality of AP561 in a laboratory environment. The
sequencing is not required in the final system application.
Bias.
Voltage (V)
VCC
+12
VPD
+5
Turn-on Sequence:
1.
2.
3.
4.
Attach input and output loads onto the evaluation board.
Turn on power supply VCC = +12V.
Turn on power supply VPD = +5V.
Turn on RF power.
Turn-off Sequence:
1. Turn off RF power.
2. Turn off power supply VPD = +5V.
3. Turn off power supply VCC = +12V.
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 14 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Pin Configuration and Description
Pin No.
Label
Description
1
PIN_VBIAS
Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc.
2, 3, 7, 8, 12, 13
N/C
No internal connection. This pin can be grounded or N/C on PCB. Land pads should be provided for PCB
mounting integrity.
4, 5, 6
RF IN
RF Input. DC Voltage present, blocking cap required. Requires matching for operation.
9, 10, 11
RF Output / VCC
RF Output. DC Voltage present, blocking cap required
14
PIN_VPD
Backside Paddle
RF/DC GND
Reference current into internal active bias current mirror. Current into PIN_VPD sets device quiescent
current. Also, can be used as on/off control.
Multiple Vias should be employed to minimize inductance and thermal resistance. Use recommended via
pattern shown under mounting configuration and ensure good solder attach for optimum thermal and
electrical performance
Evaluation Board PCB Information
TriQuint PCB 1069110 Material and Stack-up
Ultralam
1 oz. Cu top layer
0.0147 ± 0.0015
Finished Board
Thickness
Ultralam 2000
εr=2.5 typ.
1 oz. Cu bottom layer
TriQuint PCB 1080526 Material and Stack-up
FR4
1 oz. Cu top layer
0.021 ± 0.002
Finished Board
Thickness
Nelco N-4000-13
εr=3.7 typ.
1 oz. Cu bottom layer
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 15 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Mechanical Information
Package Marking and Dimensions
Marking: Part number – AP561-F
Lot code – XXXX
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Except where noted, this part outline conforms to JEDEC standard MO-220, Issue E (Variation VGGC) for thermally enhanced
plastic very thin fine pitch quad flat no lead package (QFN).
3. Dimension and tolerance formats conform to ASME Y14.4M-1994.
4. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
PCB Mounting Pattern
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We
recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25 mm (0.10”).
4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 16 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with both lead-free (260 °C max. reflow
temperature) and tin/lead (245 °C max. reflow
temperature) soldering processes.
Caution! ESD-Sensitive Device
Contact plating: Annealed Matte Tin over Cu
ESD Rating:
Value:
Test:
Standard:
Class 1A
Passes ≥ 250 V to < 500 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes  1000 V to <2000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
MSL Rating
MSL Rating: Level 3
Test:
260°C convection reflow
Standard:
JEDEC Standard IPC/JEDEC J-STD-020
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
For technical questions and application information:
+1.503.615.9000
+1.503.615.8902
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 17 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
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