LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3.8 µm 16 µW Model LED38-PR •Light Emitting Diodes LED38-PR are designed for emitting at a spectral range around 3800 nm. Heterostructures (HS) are grown on InAs substrates. The output emission can be modulated by current flowing in a forward direction. •Light Emitting Diodes LED38-PR are developed for using in optical gas sensors and medical diagnostics. They have stable output power and lifetime more then 10000 hours. •Related products: Our standard LED Driver provides power supply of LED38-PR in two recommended here regimes (Quasi-CW and Pulsed). Parameters Min Typ Max Wavelength, µm 3.70 3.80 3.90 FWHM, µm 0.60 0.70 0.80 Recommended regimes of operation Quasi-CW @ 200 mA Pulsed@1A Switching Time, ns f=2 kHz Quasi-CW Optical Power, µW 12 180 16 200 20 220 10 30 50 200 mA 250 µs 250 µs Operating Temperature o Range, C -240÷+50 Emitting Area, µm 300x300 f=2 kHz 2A 500 µs 260 oC Soldering temperature 1 µs Pulse TO-18 with Parabolic Reflector Package Package TO-18 with Reflector LED38 typical spectra at different temperatures 20 Intensity, a.u. 15 T=6°C T=21°C 10 T=50°C 5 0 2700 2900 3100 3300 3500 3700 3900 4100 4300 4500 4700 Wavelength, nm LED38 - typical Current-voltage characteristic LED38 - typical power vs. current characteristic at different temperatures 20 40 30 Far field pattern with and without reflector 1 0,9 20 16 0,8 0,7 12 T=6°C 8 T=21°C 4 T=50°C Current, mA Power, µW 0,6 10 0,5 0,4 0,3 0 0,2 0,1 -2 -1,5 -1 -0,5-10 0 -20 0,5 0 LED38 (without reflector) -30 0 0 50 100 Current, mA 150 200 -40 Voltage, V LED38-PR (with reflector)