DS12W THRU DS120W Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0 A PINNING PIN FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: DS12W --- K 12 DS14W --- K 14 DS16W --- K 16 DS18W --- K 18 DS110W --- K 110 DS112W --- K 112 DS115W --- K 115 DS120W --- K 120 Simplified outline SOD-123FL and symbol MECHANICAL DATA • Case: SOD-123FL • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight:15mg 0.00048oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter DS12W DS14W DS16W DS18W DS110W DS112W DS115W DS120W Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） Operating Junction Temperature Range Storage Temperature Range 1） Measured 2） VF 1.0 40 0.55 30 0.70 0.3 10 IR Cj A 0.85 0.90 V 0.2 5 0.1 2 mA 80 110 A pF RθJA 115 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C at 1MHz and applied reverse voltage of 4 V D.C. P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas. DS12W THRU DS120W Fig.2 Typical Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 Single phase half-wave 60 Hz resistive or inductive load 0.2 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 10 3 T J =100°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 Ambient Temperature (°C) 40 60 80 100 Fig.4 Typical Junction Capacitance 500 10 1.0 DS12W/DS14W DS16W/DS18W DS110W/DS112W DS115W/DS120W 0.1 0 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T J =25°C 200 100 50 DS12W/DS14W 20 DS16W-DS120W 10 1.8 1 0.1 100 10 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 8.3 ms Single Half Sine Wave (JEDEC Method) 40 30 DS12W-DS18W DS110W-DS120W 20 10 00 1 Junction Capacitance ( pF) 20 10 Number of Cycles at 60Hz 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) 20 Percent of Rated Peak Reverse Voltage（%） 1000 100 10 1 0.01 0.1 1 10 t, Pulse Duration（sec） 100 DS12W THRU DS120W PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm The recommended mounting pad size 2.0 (79) ∠ 7° Marking 1.2 (47) 1.2 (47) 1.2 (47) g pad e E A pad HE Unit： mm (mil) Type number Marking code DS12W K 12 DS14W K1 4 DS16W K 16 DS18W K 18 DS110W K 110 DS112W K 112 DS115W K 115 DS120W K 120