ON LE25S161 Serial flash memory Datasheet

LE25S161
Serial Flash Memory
16 Mb (2048K x 8)
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1. Overview
The LE25S161 is a SPI bus flash memory device with a 16M bit (2048K 
8-bit) configuration. It uses a single power supply. While making the most
of the features inherent to a serial flash memory device, the LE25S161 is
housed in an 8-pin ultra-miniature package. All these features make this
device ideally suited to storing program in applications such as portable
information devices, which are required to have increasingly more
compact dimensions.
The LE25S161 also has a small sector erase capability which makes the
device ideal for storing parameters or data that have fewer rewrite cycles
and conventional EEPROMs cannot handle due to insufficient capacity.
SOIC 8, 150mils
VSOIC8 NB
WLCSP8, 2.92x1.53
UDFN8 4x3, 0.8P
2. Features
 Operations power supply
: 1.65 to 1.95V supply voltage range
 Operating frequency
: 70MHz (max)
 Temperature range
: –40 to +90C
 Serial interface
: SPI mode 0, mode 3 supported
 Electronic Identification
: JDEC ID, Device ID, Serial Flash Discoverable Parameter (SFDP)
 Sector size
: 4K bytes/small sector, 64K bytes/sector
 Erase functions
: small sector erase (SSE), sector erase (SE), chip erase (CHE)
 Page program function
: 256 bytes/page
 Status functions
: Ready/Busy information, protect information
 Low operation current
: 5.0mA (Low-power program mode, typ), 3.5mA (Low-Power Read mode, typ)
 Erase time
: 10ms (SSE, typ), 15ms (SE, typ), 210ms (CHE, typ)
 Page program time (tPP)
: 0.4ms/256 bytes (typ.), 0.7ms/256 bytes (max.)
 Emergency shutdown of the current consumption
: transition to a standby state in less than 20s from the active by Write Suspend
: transition to a standby state in less than 40s from the active by Software Reset
 High reliability
: 100,000 erase/program cycles
: 20 years data retention period
 Package
: LE25S161MDTWG SOIC 8, 150 mils
CASE 751BD
: LE25S161FDTWG VSOIC8 NB
CASE 753AA
: LE25S161XATAG WLCSP8, 2.921.53 CASE 567LC
: LE25S161PCTXG UDFN8 43, 0.8P
CASE 506DC
: KGD
N/A
* This product is licensed from Silicon Storage Technology, Inc. (USA).
ORDERING INFORMATION
See detailed ordering and shipping information on page 54 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
November 2015 - Rev. 0
1
Publication Order Number :
LE25S161/D
LE25S161
3. Package Types and Pin Configurations
CS
1
8
V DD
SO (SIO1)
2
7
HOLD
WP
3
6
SCK
V SS
4
5
SI (SIO0)
Top view
SOIC8 (LE25S161MDTWG)
VSOIC8 NB (LE25S161FDTWG)
CS
1
8
V DD
SO (SIO1)
2
7
HOLD
WP
3
6
SCK
V SS
4
5
SI (SIO0)
Top view
UDFN8 (LE25S161PCTXG)
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2
LE25S161
A
VDD
CS
B
HOLD
SO/SIO1
C
SCK
WP
D
SI/SIO0
VSS
1
2
Top View
WLCSP8
(LE25S161XATAG)
3
2
1
5
6
7
8
KGD
Name
1
CS
2
SO (SIO1)
3
WP
4
VSS
5
SI (SIO0)
6
SCK
7
HOLD
8
VDD
A
SO/SIO1 HOLD
B
WP
SCK
C
VSS
SI/SIO0
D
2
1
Ball side View
WLCSP8
(LE25S161XATAG)
4
Pad No.
VDD
CS
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3
LE25S161
4. Package Dimensions
unit : mm
LE25S161MDTWG
SOIC 8, 150 mils
CASE 751BD-01
ISSUE O
E1
SYMBOL
MIN
A
1.35
1.75
A1
0.10
0.25
b
0.33
0.51
c
0.19
0.25
D
4.80
5.00
E
5.80
6.20
E1
3.80
E
MAX
4.00
1.27 BSC
e
PIN # 1
IDENTIFICATION
NOM
h
0.25
0.50
L
0.40
1.27

0º
8º
TOP VIEW
D
h
A1
A

c
e
b
L
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MS-012.
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4
LE25S161
Package Dimensions
unit : mm
LE25S161FDTWG
VSOIC8 NB
CASE 753AA
ISSUE O
D
A
8
NOTE 5
2X
0.10 C D
5
F
NOTE 6
E
E1
A1
NOTE 4
L2
2X 4 TIPS
0.20 C
L
4
1
NOTE 5
8X
B
b
0.25
C
DETAIL A
M
C A-B D
TOP VIEW
2X
NOTE 4
D
0.10 C A-B
0.10 C
A
DETAIL A
8X
0.10 C
e
SIDE VIEW
C
SEATING
PLANE
END VIEW
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION SHALL
BE 0.10mm IN EXCESS OF MAXIMUM MATERIAL
CONDITION.
4. DIMENSION D DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH,
PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15mm PER SIDE. DIMENSION E DOES
NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25mm PER
SIDE. DIMENSIONS D AND E ARE DETERMINED AT
DATUM F.
5. DATUMS A AND B ARE TO BE DETERMINED AT
DATUM F.
6. A1 IS DEFINED AS THE VERTICAL DISTANCE
FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
DIM
A
A1
b
c
D
E
E1
e
L
L2
MILLIMETERS
MIN
MAX
0.65
0.85
0.05
0.31
0.51
0.17
0.25
4.90 BSC
6.00 BSC
3.90 BSC
1.27 BSC
0.40
1.27
0.25 BSC
GENERIC
MARKING DIAGRAM*
8
RECOMMENDED
SOLDERING FOOTPRINT*
XXXXXXXXX
ALYWX
1
8X 1.52
7.00
XXXXX
A
L
Y
W
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
1
8X
1.27
PITCH
0.60
DIMENSION: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
*This information is generic. Please refer
to device data sheet for actual part
LE25S161
Package Dimensions
unit : mm
LE25S161XATAG
WLCSP8, 2.92x1.53
CASE 567LC
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO THE SPHERICAL
CROWNS OF THE SOLDER BALLS.
A B
E
PIN A1
REFERENCE
DIM
A
A1
b
D
E
e
D
MILLIMETERS
MIN
MAX
0.50
0.03
0.13
0.25
0.35
2.92 BSC
1.53 BSC
0.50 BSC
0.10 C
2X
0.10 C
2X
TOP VIEW
A
0.10 C
0.08 C
A1
SIDE VIEW
NOTE 3
C
RECOMMENDED
SOLDERING FOOTPRINT*
SEATING
PLANE
A1
PACKAGE
OUTLINE
e
e/2
b
0.05 C A B
8X
0.03 C
0.50
PITCH
8X
e
D
0.30
e/2
C
B
0.50
PITCH
A
1
2
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
LE25S161
Package Dimensions
unit : mm
LE25S161PCTXG
UDFN8, 4x3, 0.8P
CASE 506DC
ISSUE O
A
B
D
L
L1
PIN ONE
REFERENCE
E
DETAIL A
0.15 C
2X
ALTERNATE TERMINAL
CONSTRUCTIONS
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
DIM
A
A1
A3
b
D
D2
E
E2
e
G
L
L1
0.15 C TOP VIEW
2X
EXPOSED Cu
DETAIL B
MOLD CMPD
A
0.10 C
10X
L
0.08 C
(A3)
DETAIL B
A1
NOTE 4
C
SIDE VIEW
ALTERNATE
CONSTRUCTIONS
SEATING
PLANE
GENERIC
MARKING DIAGRAM*
G
DETAIL A
2X
1
D2
0.10
M
E2
0.10
L
8
XXXXX
XXXXX
AYWW
C A B
4
2X
8X
MILLIMETERS
MIN
MAX
0.50
0.60
0.00
0.05
0.152 REF
0.25
0.35
4.00 BSC
0.70
0.90
3.00 BSC
0.10
0.30
0.80 BSC
1.60 BSC
0.55
0.65
0.15
5
8X
e
e/2
C A B
M
b
0.10
M
C A B
0.05
M
C
NOTE 3
BOTTOM VIEW
2.60
*This information is generic. Please refer to
device data sheet for actual part marking.
8X
0.83
1.00
3.30
PACKAGE
OUTLINE
2X
0.40
1
0.80
PITCH
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
RECOMMENDED
SOLDERING FOOTPRINT*
2X
XXXXX
A
Y
WW
8X
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
LE25S161
5. Pin Description
Sy mbol
Pin Name
IO
CS
Chip select
I
SCK
Serial clock
I
Description
The dev ice becomes activ e when the logic lev el of this pin is low; it is deselected and placed in
standby status when the logic lev el of the pin is high.
This pin controls the data input/output timing.
The input data and addresses are latched sy nchronized to the rising edge of the serial clock, and
the data is output sy nchronized to the f alling edge of the serial clock.
SI
(SIO0)
SO
(SIO1)
WP
HOLD
Serial data input
(Serial data input output)
Serial data output
(Serial data input output)
The data and addresses are input f rom this pin, and latched internally sy nchronized to the rising
I/O
edge of the serial clock.
(It changes into input/output pin during the Dual operation.)
The data stored inside the dev ice is output f rom this pin sy nchronized to the f alling edge of the
I/O
serial clock.
( It changes into input/output pin during the Dual operation.)
Write protect
I
The Write Status Register Protect (SRWP) takes ef f ect when the logic lev el of this pin is low.
Hold
I
Serial communication is suspended when the logic lev el of this pin is low.
VDD
Power supply
This pin supplies the 1.65 to 1.95V supply v oltage.
VSS
Ground
This pin supplies the 0V supply v oltage.
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LE25S161
6. Block Diagram
16M Bit
Flash EEPROM
Cell Array
Power
Circuit
Energyconsumption
Control Unit
Memory Control Logic
Decoder Logic
&
Serial-parallel conversion Logic
Command
Logic
Serial interface
CS
SCK
SI
(SIO0)
SO
(SIO1)
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9
WP
HOLD
LE25S161
7. Device Operation
7-1. Standard SPI Modes
The read, erase, program and other required functions of the device are executed through the command registers. The
serial I/ O corrugate is shown in "Figure 1. SPI Modes" and the command list are shown in "Table.1-1. Co mmand Settings
(Standard SPI)". At the falling CS edge the device is selected, and serial input is enabled for the co mmands, addresses, etc.
These inputs are normalized in 8 b it units and taken into the device interior in synchronization with the rising edge of SCK,
which causes the device to execute operation according to the command that is input.
The LE25S161 supports both serial interface SPI mode 0 and SPI mode 3. At the falling CS edge, SPI mode 0 is
automatically selected if the logic level of SCK is low, and SPI mode 3 is automatically selected if the logic level of SCK
is high.
Figure 1. SPI Modes
CS
Mode3
SCK
Mode0
8CLK
SI
1st byte
MSB
(Bit7)
2nd byte
Nth byte
LSB
(Bit0)
High Impedance
SO
DATA
DATA
7-2. Dual SPI Modes
The LE25S161 supports Dual SPI operations when using "Dual Output Read (RDDO: 3Bh)", "Dual I/O Read (RDIO:
BBh)". The SI and SO p ins change into the input/output pin (SIOx) during the Dual SPI modes. The command list is
shown in "Table.1-2. Command Settings (Dual SPI)".
Pin Configurations at Dual SPI Mode
Standard SPI
Dual SPI

SI
SIO0

SO
SIO1
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LE25S161
Table 1-1. Command Settings (Standard SPI) --- Max: 70MHz (except RDLP)
Command
WREN
Description
1st byte
2nd byte
3rd byte
4th byte
5th byte
6th byte
Nth byte
(clock number)
(0 - 7)
(8 - 15)
(16- 23)
(24 - 31)
(32 - 39)
(40 - 47)
(8N-8 to 8N-1)
Write enable
06h
WRDI
Write disable
04h
RDSR
Read Status Register
05h
WRSR
Write Status Register
01h
DATA
03h
A23-A16
A15-A8
A7-A0
RD
0Bh
A23-A16
A15-A8
A7-A0
X
20h / D7h
A23-A16
A15-A8
A7-A0
D8h
A23-A16
A15-A8
A7-A0
A23-A16
A15-A8
A7-A0
Manufacture
Memory
Capacity
(62h)
Ty pe (16h)
(15h)
ABh
X
X
X
Read SFDP
5Ah
A23-A16
A15-A8
A7-A0
X
Deep Power down
B9h
RDLP
RDHS
SSE
SE
Low -Power Read
(Max: 33.33MHz)
High-Speed Read
Small Sector Erase (4KB)
Sector Erase (64KB)
CHE
Chip Erase (16M bits)
60h / C7h
PP
Normal Page Program
02h
PPL
Low-Power Page Program
0Ah
WSUS
Write Suspend
B0h
RESM
Resume
30h
RJID
Read JEDEC ID
9Fh
RID
RSFDP
DP
EDP
RSTEN
RST
Read Dev ice ID
(Exit power down mode)
Exit Deep
Power down
PD
(5)
(7)
RD
(5)
RD
(5)
RD
(5)
RD
(5)
PD
(7)
PD
(7)
RD
(5)
RD
(5)
Dev ice ID
(88h)
ABh
Reset Enable
66h
Reset
99h
Table 1-2. Command Settings (Dual SPI) --- Max: 50MHz
Command
RDDO
Description
1st byte
2nd byte
3rd byte
4th byte
5th byte
6th byte
Nth byte
(clock number)
(0 - 7)
(8 - 15)
(16- 23)
(24 - 31)
(32 - 39)
(40 - 47)
(8N-8 to 8N-1)
3Bh
A23-A16
A15-A8
A7-A0
Z
Dual Output Read
RDD
(6)
RDD
(6)
RDD
(6)
RDD
(6)
(8)
RDIO
Dual I/O Read
BBh
A23-A8(8)
A7-A0 ,
X, Z
RDD
(6)
Note:
1. "X" signifies "don’t care" (that is to say, any value may be input).
2. "Z" signifies "high-impedance".
3. The "h" follow ing each code indicates that the number given is in hexadecimal notation.
4. Addresses A23 to A21 for all commands are "Don't care".
5. "RD" Read data on SO.
6. "RDD" Dual Read data:
SIO0=(Bit6, Bit4, Bit2, Bit0)
7. "PD"
SIO1=(Bit7, Bit5, Bit3, Bit1)
Page Program data on SO.
8. Dual SPI address input from SIO0 and SIO1:
SIO0=(A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0)
SIO1=(A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1)
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RDD
(6)
LE25S161
8. Memory Organization
Table 2. Memory Organization
16M bits
Sector
(64KB)
Symbol :SE
31
30 to 6
5
4
3
2
1
small sector
(4KB)
Symbol :SSE
SSE[511]
to
SSE[496]
SSE[495]
to
SSE[96]
SSE[95]
to
SSE[80]
SSE[79]
to
SSE[64]
SSE[63]
to
SSE[48]
SSE[47]
to
SSE[32]
SSE[31]
to
SSE[16]
SSE[15]
to
SSE[4]
SSE[3]
0
SSE[2]
SSE[1]
SSE[0]
address space
(A23 to A0)
1FF000h
1FFFFFh
1F0000h
1EF000h
1F0FFFh
1EFFFFh
060000h
05F000h
060FFFh
05FFFFh
050000h
04F000h
050FFFh
04FFFFh
040000h
03F000h
040FFFh
03FFFFh
030000h
02F000h
030FFFh
02FFFFh
020000h
01F000h
020FFFh
01FFFFh
010000h
00F000h
010FFFh
00FFFFh
004000h
003800h
003000h
002800h
002000h
001800h
001000h
000800h
000000h
004FFFh
003FFFh
0037FFh
002FFFh
0027FFh
001FFFh
0017FFh
000FFFh
0007FFh
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LE25S161
9. Status Registers
The status registers hold the operating and setting statuses inside the device, and this information can be read by Read
Status Register (RDSR) and the protect informat ion can be rewritten by Write Status Register (WRSR). There are 8 b its in
total, and "Table 3. Status registers" gives the significance of each bit.
Table 3. Status Registers
Bit
Name
Bit0
RDY
Bit1
Bit2
Logic
Function
0
Ready
1
Erase/Program
0
Write disabled
1
Write enabled
0
WEN
BP0
Power-on Time Inf ormation
0
0
1
Bit3
0
Block protect inf ormation
1
Protected area switch
BP1
Nonv olatile inf ormation
0
Bit4
BP2
1
Bit5
TB
Bit6
SUS
Bit7
SRWP
0
Block protect
1
Upper side/Lower side switch
0
Erase/Program is not suspended
1
Erase/Program suspended
0
Write Status Register enabled
1
Write Status Register disabled
Nonv olatile inf ormation
0
Nonv olatile inf ormation
Note: All non-v olatile bits of the status registers-1 are set "0" in the f actory .
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LE25S161
9-1. Contents of each status register
9-1-1. RDY (bit 0)
The RDY register is for detecting the write (Program, Erase and Write Status Register) end. When it is " 1", the device is in
a busy state, and when it is "0", it means that write is completed.
9-1-2. WEN (bit 1)
The WEN reg ister is for detecting whether the device can perform write operations. If it is set to "0", the device will not
perform the write operation even if the write command is input. If it is set to "1", the device can perform write operations
in any area that is not block-protected.
WEN can be controlled using the write enable (WREN) and write d isable (W RDI). By inputting the write enable (WREN:
06h), WEN can be set to "1" by inputting the write disable (WRDI: 04h ), it can be set to "0." In the following states, WEN
is automatically set to "0" in order to protect against unintentional writing.
• At power-on
• Upon completion of Erase (SSE, SE, or CHE)
• Upon completion of Page Program (PP or PPL)
• Upon completion of Write Status Register (WRSR)
* If a write operation has not been performed inside the LE25S161 because, for instance, the command input for any of
the write operations (SSE, SE, CHE, PP, PPL or W RSR) has failed or a write operation has been performed for a
protected address, WEN will retain the status established prior to the issue of the command concerned. Furthermo re, its
state will not be changed by a read operation.
9-1-3. BP0, BP1, BP2, TB (bits 2, 3, 4, 5)
Block Protect: BP0, BP1, BP2 and TB are status register bits that can be rewritten, and the memory space to be protected
can be set depending on these bits. For the setting conditions, refer to "Table 4. Protected Level Setting Conditions".
BP0, BP1, and BP2 are used to select the protected area and TB to allocate the protected area to the higher-order address
area or lower-order address area.
Table 4. Protection Level Setting Conditions
Status Register Bits
Protected Lev el
Protected Block
TB
BP2
BP1
BP0
Protected Area
0
Whole area unprotected
X
0
0
0
None
T1
Upper side 1/32 protected
0
0
0
1
1F0000h to 1FFFFFh
T2
Upper side 1/16 protected
0
0
1
0
1E0000h to 1FFFFFh
T3
Upper side 1/8 protected
0
0
1
1
1C0000h to 1FFFFFh
T4
Upper side 1/4 protected
0
1
0
0
180000h to 1FFFFFh
T5
Upper side 1/2 protected
0
1
0
1
100000h to 1FFFFFh
B1
Lower side 1/32 protected
1
0
0
1
000000h to 00FFFFh
B2
Lower side 1/16 protected
1
0
1
0
000000h to 01FFFFh
B3
Lower side 1/8 protected
1
0
1
1
000000h to 03FFFFh
B4
Lower side 1/4 protected
1
1
0
0
000000h to 07FFFFh
B5
Lower side 1/2 protected
1
1
0
1
000000h to 0FFFFFh
6
Whole area protected
X
1
1
X
000000h to 1FFFFFh
Note: Chip Erase is enabled only when the protection level is 0.
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14
LE25S161
9-1-4. SUS (bit 6)
The SUS reg ister indicates when Erase/Program operation has been suspended. The SUS beco mes "1" when the
Erase/Program operation has been suspended (WSUS: B0h). The SUS is cleared to"0" by Resume (RESM :30h) or
re-erase/program (SSE, SE, CHE, PP, PPL).
9-1-5. SRWP (bit 7)
Write Status Register protect SRWP is the bit for protecting the status registers, and its informat ion can be rewritten.
When SRWP is "1" and the logic level of the WP pin is low, the Write Status Register (WRSR: 01h) is ignored, and status
registers BP0, BP1, BP2, TB and SRWP are protected. When the logic level of the WP pin is high, the status registers are
not protected regardless of the SRWP state. The SRWP setting conditions are shown in "Table 5. SRWP Sett ing
Conditions".
Table 5. SRWP Setting Conditions
WP Pin
SRWP
Status Register Protect State
0
Unprotected
0
1
1
Protected
0
Unprotected
1
Unprotected
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LE25S161
10. Description of Commands and Operations
A detailed description of the functions and operations corresponding to each command is presented below.
10-1. Read Status Register (RDSR)
The contents of the status registers can be read using the Read Status Register (RDSR). This command can be executed
even during the following operations.
• Erase (SSE, SE or CHE)
• Page Program (PP or PPL)
• Write Status Register (WRSR)
"Figure 2. Read Status Register (RDSR)" shows the timing waveforms.
The sequence of RDSR operation :
CS goes to low  input RDSR command (05h)
 Status Register data (SRWP, SUS, TB, BP2, BP1, BP0,WEN, RDY) out on SO 
completed by CS =high
* The data output starts from the falling edge of SCK(7th clock)
This command outputs the contents of the status registers synchronized to the falling edge of the clock (SCK).
If the clock input is continued after bit0 ( RDY) has been output, the data is output by returning to bit7 (SRWP) that was
first output, after which the output is repeated for as long as the clock input is continued. The data can be read by this
command at any time (even during a program, erase cycle). By setting CS to high, the device is deselected, and Read
JEDEC ID cycle is completed. While the device is deselected, the output pin SO is in a high-impedance state
Figure 2. Read Status Register (RDSR)
CS
Mode 3
SCK
0 1 2 3 4 5 6 7 8
15 16
23
Mode 0
8CLK
SI
05h
MSB
SO
High Impedance
DATA
MSB
DATA
MSB
● DATA: Status Resister, "Table 3 Status Register"
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DATA
MSB
LE25S161
10-2. Write Status Register (WRSR)
The information in status registers BP0, BP1, BP2, TB and SRWP can be rewritten using this co mmand. bit0 ( RDY), bit 1
(WEN) and bit6 (SUS) are read-only bits and cannot be rewritten. The information in bits BP0, BP1, BP2, TB and SRWP
is stored in the non-volatile memory, and when it is written in these bits, the contents are retained even at power-down.
"Figure 3. Write Status Register (WRSR)" shows the timing waveforms.
"Figure 31. Write Status Register Flowcharts" shows the flowcharts.
The sequence of WRSR operation :
CS goes to low  input WRSR command (01h)
 Status Register data input on SI
 CS goes to high (be executed by the rising CS edge)
Erase and program are performed automatically inside the device by Write Status Register. So that erasing or other
processing is unnecessary before executing the command. By the operation of this command, the informat ion in bits BP0,
BP1, BP2, TB and SRWP can be rewritten. Since bits bit0 ( RDY), b it1 (W EN), b it 6 (SUS) of the status register cannot be
written, no problem will arise if an attempt is made to set them to any value when rewrit ing the status register. Write
Status Register ends can be detected by RDY of Read Status Register (RDSR). To init iate Write Status Register, the logic
level of the WP pin must be set high and status register WEN must be set to "1".
Self-timed
Write Cycle
Figure 3. Write Status Register (WRSR)
tWRSR
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15
Mode0
8CLK
SI
01h
DATA
MSB
SO
High Impedance
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LE25S161
10-3. Write Enable (WREN)
Before performing any of the operations listed below, the device must be placed in the write enable state.
• Erase (SSE, SE, CHE or CHE)
• Page Program (PP or PPL)
• Write Status Register (WRSR)
Operation is the same as for setting status register WEN to "1", and the state is enabled by this command.
"Figure 4. Write Enable (WREN)" shows the timing waveforms.
The sequence of WREN operation :
CS goes to low  input WREN command (06h)
 CS goes to high (be executed by the rising CS edge)
Figure 4. Write Enable (WREN)
CS
Mode3
SCK
0 1 2 3 4 5 6 7
Mode0
8CLK
SI
06h
MSB
SO
High Impedance
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LE25S161
10-4. Write Disable (WRDI)
This command sets status register WEN to "0" to prohibit unintentional writing. The write disable state (WEN "0") is
exited by setting WEN to "1" using the write enable (WREN: 06h).
"Figure 5. Write Disable (WRDI)" shows the timing waveforms.
The sequence of WRDI operation :
CS goes to low  input WRDI command (04h)
 CS goes to high (be executed by the rising CS edge)
Figure 5. Write Disable (WRDI)
CS
Mode3
SCK
0 1 2 3 4 5 6 7
Mode0
8CLK
SI
04h
MSB
SO
High Impedance
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LE25S161
Standard SPI Read
There are two Read commands, "Low-Power Read (RDLP: 03h)" and "High-Speed Read (RDHS: 0Bh)".
10-5. Standard SPI Read
There are two Read commands, Low-Power Read (RDLP) and High-Speed Read (RDHS).
10-5-1. Low-Power Read command (RDLP)
Maximum Clock frequency: 33.33MHz
This command is for reading data out.
"Figure 6. Low-Power Read (RDLP)" shows the timing waveforms.
The sequence of RDLP operation :
CS goes to low  input RDLP command (03h)  3 Byte address (A23-A0) input on SI
 the corresponding data out on SO
 continuous data out (n-byte) 
 completed by CS =high
* The data output starts from the falling edge of SCK(31th clock)
The Address is latched on rising edge of SCK, and the corresponding data is shifted out on SO by the falling edge of SCK.
The address is automatically incremented to the next higher address after each byte data is shifted out. If the SCK input is
continued after the internal address arrives at the highest address (1FFFFFh), the internal address returns to the lowest
address (000000h). By setting CS to high, the device is deselected, and the read cycle is co mpleted. While the device is
deselected, the output pin SO is in a high-impedance state.
Figure 6. Low-Power Read (RDLP)
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
Mode0
8CLK
SI
03h
Add
(A23-A16)
Add
(A15-A8)
Add
(A7-A0)
Byte 1
SO
High Impedance
DATA
MSB
● Address A23 to A21 are "Don't care".
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Byte 2
DATA
MSB
Byte 3
DATA
MSB
LE25S161
10-5-2. High-Speed Read command (RDHS)
Maximum Clock frequency: 70MHz
This command is for reading data out at the high frequency operation.
"Figure 7. High-Speed Read (RDHS)" shows the timing waveforms.
The sequence of RDHS operation :
CS goes to low  input RDHS command (0Bh)  3 Byte address (A23-A0) input on SI
 1 byte dummy cycle  the corresponding data out on SO
 continuous data out (n-byte) 
 completed by CS =high
* The data output starts from the falling edge of SCK(39th clock)
The Address is latched on rising edge of SCK. It is necessary to add 1 dummy byte cycle after address is latched, and the
corresponding data is shifted out on SO by the falling edge of SCK. The address is automatically incremented to the next
higher address after each byte data is shifted out. If the SCK input is continued after the internal address arrives at the
highest address (1FFFFFh), the internal address returns to the lowest address (000000h). By setting CS to high, the device
is deselected, and the read cycle is co mpleted. While the device is deselected, the output pin SO is in a high-impedance
state.
Figure 7. High-Speed Read (RDHS)
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55
Mode0
8CLK
SI
0Bh
Add
Add
Add
(A23-A16)
(A15-A8)
(A7-A0)
X
MSB
Byte 1 Byte 2 Byte 3
SO
High Impedance
DATA
MSB
● Address A23 to A21 are "Don't care".
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DATA
MSB
DATA
MSB
LE25S161
10-6. Dual read
There are two Dual read commands, the Dual Output Read (RDDO) and the Dual I/O Read (RDIO).
They achieve the twice speed-up from "High-Speed Read (RDHS: 0Bh)". The command list is shown in "Table.1-2.
Command Settings (Dual SPI)"
Pin Configurations at Dual SPI Mode
Standard SPI
Dual SPI

SI
SIO0

SO
SIO1
10-6-1. Dual Output Read command (RDDO)
Maximum Clock frequency: 50MHz
The SI and SO pins change into the input/output pin (SIOx) during this operation. It makes the data output x2 b it and has
achieved a high-speed output. bit7, 5, 3 and bit1are output from SIO0. bit6, 4, 2 and bit0 are output from SIO1.
"Figure 8. Dual Output Read (RDDO)" shows the timing waveforms.
The sequence of RDDO operation :
CS goes to low  input RDDO command (3Bh)  3 Byte address (A23-A0) input on SI
 1 byte dummy cycle  the corresponding data out on SI/SIO0 and SO/SIO1
 continuous data out (n-byte) per 4clock 
 completed by CS =high
* The data output starts from the falling edge of SCK(39th clock)
Output Data
SI/SIO0
bit6,4,2,0
SO/SIO1
bit7,5,3,1
The Address is latched on rising edge of SCK. It is necessary to add 1 dummy byte cycle after address is latched, and the
corresponding data is shifted out on SI/SIO0 and SO/SIO1 by the falling edge of SCK. The address is automatically
incremented to the next higher address after each byte data (4 clock cycles) is shifted out. If the SCK input is continued
after the internal address arrives at the highest address (1FFFFFh), the internal address returns to the lowest address
(000000h ). By setting CS to high, the device is deselected, and the read cycle is co mpleted. While the device is deselected,
the output pin SO is in a high-impedance state.
Figure 8. Dual Output Read (RDDO)
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
43 44
47
Mode0
8CLK
3Bh
SIO0
Add
Add
Add
(A23-A16)
(A15-A8)
(A7-A0)
MSB
SIO1
dummy
bit
Byte 1
Byte 3
DATA0 DATA0 DATA0
4CLK
High Impedance
Byte 2
4CLK
DATA1 DATA1 DATA1
MSB
MSB
MSB
DATA0: bit6,bit4,bit2,bit0
DATA1: bit7,bit5,bit3,bit1
● Address A23 to A21 are "Don't care".
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LE25S161
10-6-2. Dual I/O Read command (RDIO)
Maximum Clock frequency: 50MHz
The SI and SO p ins change into the input/output pin (SIOx) during this operation. It makes the address input and data
output x2 b it and has achieved a high-speed output. Add1 (A23, A 21, -, A3 and A1) is input fro m SIO1 and Add0 (A22,
A20, -, A2 and A0) is input from SIO0. b it7, 5, 3 and bit1are output from SIO0. b it6, 4, 2 and bit0 are output from SIO1.
"Figure 9. Dual I/O Read (RDIO)" shows the timing waveforms.
The sequence of RDIO operation :
CS goes to low  input RDIO command (BBh)
 3 Byte address (A23-A0) input on SI/SIO0 and SO/SIO1 by 12 clock cycle
 2 dummy clock (SI/SIO0 and SO/SIO1 are don’t care)
+ 2 dummy clock (must set SI/SIO0 and SO/SIO1 high impedance)
 the corresponding data out on SI/SIO0 and SO/SIO
 continuous data out (n-byte) per 4clock 
 completed by CS =high
* The data output starts from the falling edge of SCK(23th clock)
Input Address
Output Data
SI/SIO0
A22,20,18 --,A2,A0
bit6,4,2,0
SO/SIO1
A23,21,19 --,A3,A1
bit7,5,3,1
The Address is latched on rising edge of SCK. It is necessary to add 4 dummy clocks after address is latched,
2CLK of the latter half of the dummy clock is in the state of high impedance, the controller can switch I/ O for this period.
The corresponding data is shifted out on SI/SIO0 and SO/SIO1 by the falling edge of SCK. The address is automatically
incremented to the next higher address after each byte data (4 clock cycles) is shifted out. If the SCK input is continued
after the internal address arrives at the highest address (1FFFFFh), the internal address returns to the lowest address
(000000h ). By setting CS to high, the device is deselected, and the read cycle is co mpleted. While the device is deselected,
the output pin SO is in a high-impedance state.
Figure 9. Dual I/O Read (RDIO)
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
19 20 21 22 23 24
31
Mode0
dummy
bit
8CLK
BBh
SIO0
MSB
SIO1
27 28
High Impedance
Add1:A22,A20-A2,A0
12CLK
Add2:A23,A21-A3,A1
X
Byte 1
Byte3
DATA0 DATA0 DATA0
2CLK 2CLK
X
Byte2
4CLK
DATA1 DATA1 DATA1
MSB
MSB
MSB
DATA0: bit6,bit4,bit2,bit0
DATA1: bit7,bit5,bit3,bit1
● Address A23 to A21 are "Don't care".
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LE25S161
10-7. Small Sector Erase (SSE)
Small Sector Erase is an operation that sets the memory cell data in any small sector to "1". A small sector consists of
4Kbytes.
"Figure 10. Small Sector Erase (SSE)" shows the timing waveforms.
"Figure 32. Small Sector Erase Flowcharts" shows the flowcharts.
The sequence of SSE operation :
CS goes to low  input SSE command (20h or D7h)  3 Byte address (A23-A0) input on SI
 CS goes to high (be executed by the rising CS edge)
* A20 to A12 are valid address
After the correct input sequence the internal erase operation is executed by the rising CS edge, and it is completed
automatically by the control exercised by the internal timer (tSSE). The end of erase operation can also be detected by
status register (RDY).
Figure 10. Small Sector Erase (SSE)
Self-timed
Erase Cycle
tSSE
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31
Mode0
8CLK
SI
20h / D7h
Add
Add
Add
(A23-A16)
(A15-A8)
(A7-A0)
MSB
SO
High Impedance
● Address A23 to A21, A11 to A0 are "Don't care".
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LE25S161
10-8. Sector Erase (SE)
Sector Erase is an operation that sets the memory cell data in any sector to "1". A sector consists of 64Kbytes.
"Figure 11. Sector Erase (SE)" shows the timing waveforms.
"Figure 33. Sector Erase Flowcharts" shows the flowcharts.
The sequence of SE operation :
CS goes to low  input SE command (D8h)  3 Byte address (A23-A0) input on SI
 CS goes to high (be executed by the rising CS edge)
* A20 to A16 are valid address
After the correct input sequence the internal erase operation is executed by the rising CS edge, and it is completed
automatically by the control exercised by the internal timer (tSE). The end of erase operation can also be detected by
status register (RDY).
Figure 11. Sector Erase (SE)
Self-timed
Erase Cycle
tSE
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31
Mode0
8CLK
SI
D8h
Add
Add
Add
(A23-A16)
(A15-A8)
(A7-A0)
MSB
SO
High Impedance
● Address A23 to A21 , A15 to A0 are "Don't care.
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LE25S161
10-9. Chip Erase (CHE)
Chip Erase is an operation that sets the memory cell data in all sectors to "1".
"Figure 12. Chip Erase (CHE)" shows the timing waveforms.
"Figure 34. Chip Erase Flowcharts" shows the flowcharts.
The sequence of CHE operation :
CS goes to low  input CHE command (60h or C7h)
 CS goes to high (be executed by the rising CS edge)
After the correct input sequence the internal erase operation is executed by the rising CS edge, and it is completed
automatically by the control exercised by the internal timer (tSE). The end of erase operation can also be detected by
status register (RDY).
Figure 12. Chip Erase (CHE)
Self-timed
Erase Cycle
tCHE
CS
Mode3
SCK
0 1 2 3 4 5 6 7
Mode0
8CLK
SI
60h / C7h
MSB
SO
High Impedance
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LE25S161
10-10. Page Program
10-10-1. Normal Page Program (PP)
10-10-2. Low-Power Page Program (PPL)
There are two Page Program co mmands, Normal program (PP: 02h ) and Low-Power program (PPL: 0Ah) These two
commands are comp letely functionally the same. By selecting the Low-Power p rogram (PPL), the operating current is
reduced, but the program cycle time is extended. (Iccpp > Iccppl , tPPL > tPP)
Page Program is an operation that programs any number of bytes fro m 1 to 256 bytes within the same sector page (page
addresses: A20 to A8). Before init iating Page Program, the data on the page concerned must be erased using Small Sector
Erase, Sector Erase, or Chip Erase. Page Program (PP, PPL) allows only previous erased data (FFh).
"Figure 13. Normal Page Program (PP)". "Figure 14. Low-power Page Program (PPL)" shows the timing waveforms.
"Figure 35. Page Program Flowcharts" shows the flowcharts.
The sequence of PP or PPL operation :
CS goes to low  input PP command (02h) or PPL command (0Ah)
 3 Byte address (A23-A0) input on SI
 n-Byte data input on SI 
 CS goes to high (be executed by the rising CS edge)
The program data must be loaded in 1-byte increments. If the data loaded has exceeded 256 bytes, the 256 bytes loaded
last are programmed. After the correct input sequence the internal program operation is executed by the rising CS edge,
and it is completed automatically by the control exercised by the internal timer (t PP or t PPL). The end of program
operation can also be detected by status register (RDY).
Self -timed
Figure 13. Normal Page Program (PP)
Program Cy cle
tPP
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
2079
Mode0
8CLK
SI
02h
Byte 1
Add
(A23-A16)
Add
(A15-A8)
Add
(A7-A0)
PD
Byte 2
PD
Byte
256
PD
MSB
High Impedance
SO
● Address A23 to A21 are "Don't care".
Self -timed
Program Cy cle
Figure 14. Low-Power Page Program (PPL)
tPPL
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
2079
Mode0
8CLK
SI
0Ah
Byte 1
Add
Add
Add
(A23-A16)
(A15-A8)
(A7-A0)
MSB
SO
High Impedance
● Address A23 to A21 are "Don't care".
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PD
Byte 2
PD
Byte
256
PD
LE25S161
10-11. Write Suspend (WSUS)
The Write Suspend (WSUS) allo w the system to interrupt Small Sector Erase (SSE), Sector Erase (SE), Ch ip Erase (CHE)
or Page Program (PP, PPL).
"Figure 15. Write Suspend (WSUS)" shows the timing waveforms.
The sequence of WSUS operation :
CS goes to low  input WSUS command (B0h)
 CS goes to high (be executed by the rising CS edge)
After the command has been input, the device becomes consumption current equivalent to standby within 20 us. The
recovery time (t RSUS) is needed before next co mmand fro m suspend. The internal operation status could be checked by
using status register RDY bit or SUS bit, but the device will not accept another command until it is ready.
• The Write Suspend is valid Erase cycle (SSE, SE and CHE) or Program cycle (PP, PPL).
• If the Erase (SSE, SE, CHE) or Program (PP, PPL) entry during the suspension, the suspension will be canceled
automatically. And a new Erase (SSE, SE, CHE), Program (PP, PPL) will be executed. In this case, it is
necessary to erase/program the suspended area again.
• During Write Suspend, Read (RDSR, RDLP, RDHS, RDDO, RDIO) and Resume (RESM) can be accepted.
• If the Software Reset is executed during the suspension, the suspension will be canceled automatically.
Figure 15. Write Suspend (WSUS)
Recovery time
from Suspend
tRSUS
CS
Mode3
SCK
20us
0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7
Mode0
8CLK
SI
Next Command
(Read or Resume)
MSB
B0h
MSB
SO
High Impedance
Operation Current
= Isb
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LE25S161
10-12. Resume (RESM)
This command (RESM) restarts erase cycle (SSE, SE, CHE) or program cycle (PP, PPL) that was suspended.
"Figure 16. Resume (RESM)" shows the timing waveforms.
The sequence of RESM operation :
CS goes to low  input RESM command (30h)
 CS goes to high (be executed by the rising CS edge)
The internal operation status could be checked by using status register RDY bit or SUS bit.
This command will be ignored if the previous Write Suspend operation was interrupted by unexpected power off or
re-erase/program (cancel of suspend) or Software Reset(RST). To execute Write Suspend (WSUS) again after Resume, it
is necessary to wait for some time (tSUS).
Figure 16. Resume (RESM)
Self-timed
Write Cycle
tCHE/ tSE/ tSSE/
tPP/ tPPL
CS
Mode3
SCK
0 1 2 3 4 5 6 7
Mode0
8CLK
SI
30h
MSB
SO
High Impedance
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LE25S161
10-13. Read ID
Read ID is an operation that reads the manufacturer code (RJID) and device ID informat ion (RID). These Read ID
commands are not accepted during writing. There are t wo methods of reading the silicon ID, each of wh ich is assigned a
device ID.
10-13-1. Read JEDEC ID (RJID)
This command (RJID) is compatible with the JEDEC standard for SPI compatible serial memories.
"Table 6. JEDEC ID codes" lists the silicon ID codes.
"Figure 17. Read JEDEC ID (RJID)" shows the timing waveforms.
The sequence of RJID operation :
CS goes to low  input RJID command (9Fh)
 Manufacture code (62h) out on SO  Memory type code (16h) out on SO
 Memory capacity code out on SO (15h)  Reserve code (00h) 
 completed by CS =high
* The 4-byte code is output repeatedly as long as clock inputs are present
* The data output starts from the falling edge of SCK(7th clock)
By setting CS to high, the device is deselected, and Read JEDEC ID cycle is completed. While the device is deselected,
the output pin SO is in a high-impedance state.
Table 6. JEDEC ID codes
Output code
62h
Manuf acturer code
Memory ty pe
16h
Memory capacity code
15h (16M Bit)
2 by te dev ice ID
00h
Reserv e code
Figure 17. Read JEDEC ID (RJID)
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39
Mode0
8CLK
SI
SO
9Fh
High Impedance
62h
MSB
16h
MSB
15h
MSB
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00h
MSB
62h
MSB
LE25S161
10-13-2. Read Device ID (RID)
This command (RID) is an operation that reads the Device ID.
"Table 7. Device ID code" lists the device ID codes.
"Figure 18. Read Device ID (RID)" shows the timing waveforms.
The sequence of RID operation :
CS goes to low  input RID command (ABh)  3 byte dummy cycle
 Device ID (88h) out on SO 
 completed by CS =high
* The Device ID (88h) is output repeatedly as long as clock inputs are present
* The data output starts from the falling edge of SCK(31th)
By setting CS to h igh, the device is deselected, and Read ID cycle is comp leted. While the device is deselected, the output
pin SO is in a high-impedance state.
Table 7. Device ID code
Output Code
1 by te dev ice ID
88h
(LE25S161)
Figure 18. Read Device ID (RID)
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39
Mode0
8CLK
SI
SO
ABh
X
X
X
High Impedance
88h
MSB
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88h
MSB
LE25S161
10-14. Deep Power-down (DP)
The standby current can be further reduced with this command (DP).
"Figure 19. Deep Power-down (DP)" shows the timing waveforms.
The sequence of DP operation :
CS goes to low  input DP command (B9h)
 CS goes to high (be executed by the rising CS edge)
The deep power-down command issued during an internal write operation will be ignored.
The deep power-down state is exited using the deep power-down exit (EDP). All other commands are ignored.
Figure 19. Deep Power-down (DP)
Standby current (Isb)
CS
tDP
Mode3
SCK
0 1 2 3 4 5 6 7
Mode0
8CLK
SI
B9h
MSB
SO
High Impedance
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Deep Pow er-down Standby
Current (Idsb)
LE25S161
10-15. Exit Deep Power-down (EDP) / Read Device ID (RDDI)
The Exit Deep Power-down (EDP) / Read Device ID (RID) co mmand is a multi-purpose command. It can be used to exit
the device from the deep power-down state, or read the device ID information.
Exit Deep Power-down (EDP)
The exit deep power-down command consists only of the first byte cycle, and it is initiated by inputting (ABh).
"Figure 20. Exiting from Deep Power-down" shows the timing waveforms.
The sequence of EDP operation :
CS goes to low  input EDP command (ABh)
 CS goes to high (be executed by the rising CS edge)
Figure 20. Exiting from Deep Power-down (EDP)
Deep Pow er-down Standby
current (Idsb)
Standby current (Isb)
CS
tRDP
Mode3
SCK
0 1 2 3 4 5 6 7
Mode0
8CLK
SI
ABh
MSB
SO
High Impedance
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LE25S161
Read Device ID (RDDI)
Also the exit from deep power-down is completed by one byte cycle or more of the Read Device ID (RID: ABh).
"Table 7. Device ID code" lists the device ID codes.
"Figure 21. Read Device ID " shows the timing waveforms.
The sequence of EDP & RID operation :
CS goes to low  input RID command (ABh)  3 byte dummy cycle
 Device ID out on SO 
 completed by CS =high
* The Device ID is output repeatedly as long as clock inputs are present
* The data output starts from the falling edge of SCK(31th clock)
By setting CS to h igh, the device is deselected, and Read ID cycle is comp leted. While the device is deselected, the output
pin SO is in a high-impedance state.
Figure 21. Read Device ID
Standby
current (Isb)
Deep Pow er-down Standbycurrent (Idsb)
CS
tRDP
Mode3
SCK
0 1 2 3 4 5 6 7 8
SO
39
Mode0
8CL
SI
31 32
ABh
24 Dummy
Bits
X
X
High Impedance
Dev ID
MSB
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Dev ID
Dev ID
LE25S161
10-16. Software Reset
The Software Reset reset the device to the state just after power-on. This operation consists of two commands: the Reset
Enable (RSTEN) and the Reset command (RST).
"Figure 22. Software Reset" shows the timing waveforms.
The sequence of Software Reset operation :
CS goes to low  input RSTEN command (66h)
 CS goes to high
 CS goes to low  input RST command (99h)
 CS goes to high (be executed by the rising CS edge)
When the Software Reset is executed, an internal write (erase/program) operation is cancel, a suspended status is reset,
and all volatility status register bits (WEN/ RDY/SUS) are reset. After the internal reset time (t RST), the device will
become stand-by state. If the Software Reset is executed during a write (erase/program) operation, any dates on the write
operation will be broken.
The Reset command must input just after input the Reset Enable co mmand. If another command input after the Reset
Enable command, the Reset-Enable state will be invalid.
Figure 22. Software Reset
Internal reset time
(tRST)
CS
Mode3
SCK
0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7
8CLK
8CLK
66h
99h
Mode0
SI
MSB
SO
MSB
High Impedance
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LE25S161
10-17. Read SFDP (RSFDP)
The Read SFDP (Serial Flash Discoverable Parameter) is an operation that reads the parameter about device
configurations, available co mmands and other features. The SFDP parameters are stored in internal parameter tables.
These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate
divergent features from multiple vendors. SFDP is a standard of JEDEC. JESD216. Rev 1.0.
"Table 8. SFDP Header" shows SFDP Header.
"Table 9. SFDP Parameter Table" shows SFDP Parameter Table.
"Figure 23. Read SFDP (RSFDP)" shows the timing waveforms.
The sequence of RSFDP operation :
CS goes to low  input RSFDP command (5Ah)  3 Byte address (A23-A0) input on SI
 1 byte dummy cycle  the corresponding parameter out on SO
 continuous parameter out (n-byte) 
 completed by CS =high
* A10 to A0 are valid address
* The parameter output starts from the falling edge of SCK(39th clock)
The Address is latched on rising edge of SCK. It is necessary to add 1 dummy byte cycle after address is latched, and the
corresponding parameter is shifted out on SO by the falling edge of SCK. The address is automatically incremented to the
next higher address after each byte parameter is shifted out. By setting CS to high, the device is deselected, and Read
SFDP cycle is completed. While the device is deselected, the output pin SO is in a high-impedance state.
Figure 23. Read SFDP (RSFDP)
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55
Mode0
8CLK
SI
5Ah
Add
Add
Add
(A23-A16)
(A15-A8)
(A7-A0)
X
MSB
Byte 1
SO
High Impedance
Param1 Param2 Param3
MSB
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Byte 2 Byte 3
MSB
MSB
LE25S161
Table 8. SFDP Header
SFDP Header 1st and 2nd DWORD
Description
SFDP Signature
Comment
50444653h
(SFDP)
By te Address
(Hex)
Bits
Data
(Hex)
00h
7:0
53h
01h
15:8
46h
02h
23:16
44h
03h
31:24
50h
7:0
05h
01h
SFDP Minor Rev ision Number
Start f rom 00h
04h
SFDP Major Rev ision Number
Start f rom 01h
05h
15:8
Number of Parameter Headers
02h indicates 3 parameters
06h
23:16
02h
07h
31:24
FFh
By te Address
(Hex)
Bits
Data
(Hex)
Unused
1st Parameter Header (JDEC Basic Flash parameters)
Description
ID number (JEDEC ID)
Parameter Table Minor Rev ision
Number
Parameter Table Major Rev ision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
Comment
00h(JEDEC specif ied header)
08h
7:0
00h
Start f rom 00h
09h
15:8
00h
Start f rom 01h
0Ah
23:16
01h
How many DWORDs in the Parameter table
10h indicates 16 DWORDs
0Bh
31:24
10h
0Ch
7:0
40h
0Dh
15:8
00h
0Eh
23:16
00h
0Fh
31:24
FFh
By te Address
(Hex)
Bits
Data
(Hex)
62h(ON Semiconductor manuf acturer ID)
10h
7:0
62h
Start f rom 00h
11h
15:8
00h
Start f rom 01h
12h
23:16
01h
How many DWORDs in the Parameter table
04h indicates 4 DWORDs
13h
31:24
04h
14h
7:0
C0h
15h
15:8
00h
16h
23:16
00h
17h
31:24
FFh
First address of JEDEC Flash
Parameter table
Unused
2nd Parameter Header (Vender parameters 1)
Description
ID number
(ON Semiconductor
manuf acturer ID)
Parameter Table Minor Rev ision
Number
Parameter Table Major Rev ision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
Comment
First address of On Semiconductor
Parameter table
Unused
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LE25S161
Table 9. SFDP Parameter Tables
Parameter Table : JDEC Basic Flash Parameter Tables (f rom 1th DWORD to 4th DWORD)
Description
Block/Sector Erase Sizes
Write Granularity
Comment
By te
Address
(Hex)
00b: Reserv ed
01b: support 4 KB Erase
10b: Reserv ed
11b: not support 4KB Erase
0: 1By te, 1:64 By te or larger
40h
Unused
0: Non-v olatile
1: Volatile
0: use 50h opcode, 1: use 06h opcode
Note: If target f lash status register is nonv olatile,
then bits 3 and 4 must be set to 00b.
Contains 111b and can nev er be changed
4KB Erase Instruction
20h
41h
(1-1-2) Fast Read
0=not support 1=support
00: 3By te only , 01: 3 or 4By te,
10: 4By te only , 11: Reserv ed
Volatile Status Register Block Protect
bits
Write Enable Instruction Select f or
Writing to Volatile Status Register
Address By tes
Bits
Data
(Binary )
1:0
01b
2
1b
3
0b
4
0b
7:5
111b
15:8
0010_0000b
16
1b
18:17
00b
19
0b
20
1b
Double Transf er Rate (DTR)
Clocking
0=not support 1=support
(1-2-2) Fast Read
0=not support 1=support
(1-4-4) Fast Read
0=not support 1=support
21
0b
(1-1-4) Fast Read
0=not support 1=support
22
0b
42h
Unused
23
1b
Data
(Hex)
E5h
20h
91h
Unused
43h
31:24
1111_1111b
FFh
Flash Memory Density
44h
45h
46h
47h
31:0
-
00FFFFFFh
4:0
0_0000b
7:5
000b
15:8
1111_1111b
20:16
0_0000b
23:21
000b
31:24
1111_1111b
4:0
0_1000b
7:5
000b
(1-4-4) Fast Read Number of Wait
states (dummy clocks)
(1-4-4) Fast Read Number of Mode
Clocks
(1-4-4) Fast Read Instruction
(1-1-4) Fast Read Number of Wait
states (dummy clocks)
(1-1-4) Fast Read Number of Mode
Clocks
(1-1-4) Fast Read Instruction
(1-1-2) Fast Read Number of Wait
states (dummy clocks)
(1-1-2) Fast Read Number of Mode
Clocks
16 M bits
0 0000b: Wait states (dummy Clocks) not support
48h
000b: Mode Bits not support
49h
0 0000b: Wait states (dummy Clocks) not support
4Ah
000b: Mode Bits not support
4Bh
0 0000b: Wait states (dummy Clocks) not support
000b: Mode Bits not support
4Dh
0 0000b: Wait states (dummy Clocks) not support
(1-2-2) Fast Read Instruction
4Fh
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FFh
08h
15:8
0011_1011b
20:16
0_0100b
23:21
000b
31:24
1011_1011b
4Eh
000b: Mode Bits not support
FFh
00h
4Ch
(1-1-2) Fast Read Instruction
(1-2-2) Fast Read Number of Wait
states (dummy clocks)
(1-2-2) Fast Read Number of Mode
Clocks
00h
3Bh
04h
BBh
LE25S161
Parameter Table : JDEC Basic Flash Parameter Tables (f rom 5th DWORD to 8th DWORD)
Description
Comment
(2-2-2) Fast Read
0=not support 1=support
Reserv ed
Def ault all 1’s
(4-4-4) Fast Read
0=not support 1=support
Reserv ed
Def ault all 1’s
Reserv ed
Def ault all 1’s
Reserv ed
Def ault all 1’s
(2-2-2) Fast Read Number of Wait
states (dummy clocks)
(2-2-2) Fast Read Number of Mode
Clocks
(4-4-4) Fast Read Number of Wait
states (dummy clocks)
(4-4-4) Fast Read Number of Mode
Clocks
0b
4
0b
7:5
111b
31:8
-
15:0
-
20:16
0_0000b
23:21
000b
57h
31:24
1111_1111b
FFh
58h
59h
15:0
-
FFh
FFh
20:16
0_0000b
23:21
000b
31:24
1111_1111b
FFh
5Ch
7:0
0000_1100b
0Ch
5Dh
15:8
0010_0000b
20h
5Eh
23:16
0001_0000b
10h
5Fh
31:24
1101_1000b
D8h
50h
000b: Mode Bits not support
Def ault all 1’s
0 0000b: Wait states (dummy Clocks) not support
000b: Mode Bits not support
5Bh
Sector/block size = 2^N by tes
10h indicates 64Kby tes
Sector Ty pe 2 erase Instruction
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EEh
FFh
FFh
FFh
FFh
FFh
00h
5Ah
Sector/block size = 2^N by tes
0Ch indicates 4Kby tes
Data
(Hex)
111b
56h
Sector Ty pe 1 erase Instruction
Sector Ty pe 2 Size
Data
(Binary )
0
0 0000b: Wait states (dummy Clocks) not support
(4-4-4) Fast Read Instruction
Sector Ty pe 1 Size
Bits
3:1
51h
52h
53h
54h
55h
(2-2-2) Fast Read Instruction
Reserv ed
By te
Address
(Hex)
00h
LE25S161
Parameter Table : JDEC Basic Flash Parameter Tables (f rom 9th DWORD to 12th DWORD)
By te
Address
(Hex)
Bits
Data
(Binary )
Data
(Hex)
Sector/block size = 2^N by tes
00h indicates not exist
60h
7:0
0000_0000b
00h
61h
15:8
1111_1111b
FFh
Sector/block size = 2^N by tes
00h indicates not exist
62h
23:16
0000_0000b
00h
63h
31:24
1111_1111b
FFh
3:0
0100b
10:4
00_01001b
17:11
00_01110b
24:18
00_00000b
31:25
00_00000b
3:0
0010b
7:4
1000b
13:8
1_00110b
Description
Sector Ty pe 3 Size
Comment
Sector Ty pe 3 erase Instruction
Sector Ty pe 4 Size
Sector Ty pe 4 erase Instruction
Multiplier f rom ty pical erase time to
maximum erase time
Sector Ty pe 1 Erase, Ty pical time
Sector Ty pe 2 Erase, Ty pical time
SE (64K-By te erase):
150ms=2*(n+1)*15ms
n=4
SSE (4K-By te erase)
10ms: ((n+1)*1ms=10ms)
n=9
SE (64K-By te erase)
15ms: ((n+1)*1ms=15ms)
n=14
Sector Ty pe 3 Erase, Ty pical time
-
Sector Ty pe 4 Erase, Ty pical time
-
Multiplier f rom ty pical time to max
time f or Page or by te program
(n+1)*0.3ms
=0.9ms: n=2,
256By tes=2^8
Page Size
0.9ms > 0.7ms(spec)
(n+1)*64µs
=448us: n=6,
By te Program Ty pical time,
f irst by te
(n+1)*8us
=128us: n=15,
By te Program Ty pical time,
additional by te
(count+1)*1µs/by te
=1us/by te: Count=0
(n+1)*16ms
=208ms: n=12
208ms = 210ms(spec)
Reserv ed
Prohibited Operations During
Program Suspend
Prohibited Operations During Erase
Suspend
448µs > 400µs(spec)
00h
82h
E6h
1_1111b
6Ah
6Bh
xxx0b: May not initiate a new erase anywhere
xxx1b: May not initiate a new eras e in the program
suspended page size
xx0xb: May not initiate a new page program anywhere
xx1xb: May not initi ate a new page program i n the program
suspended page size
x0xxb: Refer to vendor datasheet for read restrictions
x1xxb: May not initi ate a read i n the program s uspended
page size
0xxxb: Additional erase or program restrictions apply
1xxxb: The erase and program restrictions in bits 1:0 are
sufficient
xxx0b: May not initiate a new erase anywhere
xxx1b: M ay not initi ate a new erase i n the erase
suspended sector size
xx0xb: May not initiate a page program anywhere
xx1xb: May not initiate a page program i n the erase
suspended sector size
x0xxb: Refer to vendor datasheet for read restrictions
x1xxb: May not i nitiate a read in the erase s uspended
sector size
0xxxb: Additional erase or program restrictions apply
1xxxb: The erase and program restrictions in bits 5:4 are
sufficient
<64µs: (count+1)*64µs, count=0
Suspend /resume supported
69h
00h
18:16
Program Resume to
Suspend Interv al
Erase Resume to
Suspend Interv al
Suspend in-progress
erase max latency
66h
68h
94h
70h
15:14
Reserv ed
Suspend in-progress
Program max latency
65h
67h
Page Program Ty pical time
Chip Erase, Ty pical time
64h
23:19
0_0000b
30:24
00_01100b
31
0b
3:0
1101b
6Ch
6Dh
7:4
1111b
8
0b
12:9
0000b
19:16
6Eh
<64µs: (count+1)*64µs, count=0
40µs: ((4+1)*8µs=40us)
0=support 1=not support
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6Fh
0Ch
FDh
15:13
40µs: ((4+1)*8us=40µs)
07h
80h
10_00100b
23:20
0000b
30:24
10_00100b
31
0b
08h
44h
LE25S161
Parameter Table : JDEC Basic Flash Parameter Tables (f rom 13th DWORD to 16th DWORD)
By te
Address
(Hex)
Bits
Data
(Binary )
Data
(Hex)
30h (as same as erase resume)
70h
7:0
0011_0000b
30h
B0h (as same as erase suspend)
71h
15:8
1011_0000b
B0h
30h (as same as program resume)
72h
23:16
0011_0000b
30h
B0h (as same as program suspend)
73h
31:24
1011_0000b
B0h
1:0
00b
7:2
0000_01b
14:8
10_00100b
Description
Program Resume Instruction
(program operation)
Program Suspend Instruction
(program operation)
Resume Instruction
(write or erase ty pe operation)
Suspend Instruction
(write or erase ty pe operation)
Comment
Reserv ed
Status Register Polling
Dev ice Busy
Use legacy polling by reading the Status Register
with 05h instruction
Exit Deep Power down to next
operation delay
40µs: ((4+1)*8µs=40µs)
Exit Deep Power down Instruction
74h
75h
15
ABh
76h
B9h
Deep Power down Supported
0=support 1=not support
(4-4-4) Mode Disable Sequences
-
77h
78h
(4-4-4) Mode Enable Sequences
-
(0-4-4) Mode supported
0=not support 1=support
(0-4-4) Mode Exit Method
-
(0-4-4) Mode Entry Method
-
Quad Enable requirements (QER)
00b:not hav e a QE bit
Hold and WP Disable
0: not supported
Reserv ed
-
Volatile or Non-Vol atile Register and
Write Enable Instruction f or Status
Register 1
xxx_xxx1b: Non-Volatile Status Register 1, powers-up to
last written value, use
instruction 06h to enable write
xx1_xxxxb: Status Register 1 contai ns a mix of volatile and
non- vol atile bits . The 06h instruc tion is used to enable
writing of the register.
79h
Issue reset enable instruction 66h, and then issue
reset instruction 99h.
Exit 4-By te Addressing
Enter 4-By te Addressing
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D5h
1011_1001b
30:24
31
0b
3:0
0000b
7:4
0000b
8
0b
5Ch
00h
0b
15:10
00_0000b
19:16
0000b
22:20
000b
23
0b
31:24
0000_0000b
6:0
001_1001b
7
0b
13:8
01_0000b
15:14
00b
7Eh
23:16
0000_0000b
00h
7Fh
31:24
0000_0000b
00h
7Bh
Sof t Reset and
Rescue Sequence Support
1010_1011b
9
7Ah
Reserv ed
C4h
22:16
23
Enter Deep Power down Instruction
04h
7Ch
7Dh
00h
00h
00h
19h
10h
LE25S161
Parameter Table : Vender(ON Semiconductor) Parameter 1 Tables (f rom 1th DWORD to 4th DWORD)
By te
Data
Address
Bits
Description
Comment
(Binary )
(Hex)
1900h=1.900V
2400h=2.400V
1950h=1.950V
2700h=2.700V
C0h
15:0
Supply Maximum Voltage
3000h=3.000V
C1h
2000h=2.000V
3600h=3.600V
2200h=2.200V
1600h=1.600V
20000h=2.000V
1650h=1.650V
22000h=2.200V
C2h
31:16
Supply Minimum Voltage
1700h=1.700V
23000h=2.300V
C3h
1800h=1.800V
27000h=2.700V
0=not support
RESET Pin
0
0b
1= support
0=activ e logic is 0
1
0b
RESET Activ e Logic Lev el
1=activ e logic is 1
0=not support
HOLD Pin
2
1b
1= support
0=activ e logic is 0
C4h
3
0b
HOLD Activ e Logic Lev el
1=activ e logic is 1
0=not support
4
1b
WP Pin
1= support
0=activ e logic is 0
5
0b
WP Activ e Logic Lev el
1=activ e logic is 1
Reserv ed
00b
Reserv ed
All FFh
C5h
C6h
C7h
JDEC ID Operation code
9Fh
C8h
JDEC ID Read Data
(Manuf acture code)
JDEC ID Read Data
(Memory ty pe)
JDEC ID Read Data
(Memory capacity code)
Data
(Hex)
LE25S161
50h
19h
50h
16h
14h
7:6
00b
31:8
1111_1111b
1111_1111b
1111_1111b
7:0
1001_1111b
9Fh
FFh
FFh
FFh
62h (ON Semiconductor)
C9h
15:8
0110_0010b
62h
16h
CAh
23:16
0001_0110b
16h
15h (16M bits)
CBh
31:24
0001_0101b
15h
Dev ice ID Operation code
ABh
CCh
7:0
1010_1011b
ABh
Dev ice ID Read Data
88h(LE25S161)
CDh
15:8
1000_1000b
88h
Reserv ed
All FFh
CEh
CFh
31:16
1111_1111b
1111_1111b
FFh
FFh
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LE25S161
11. Hold Function
Using the HOLD pin, the hold function suspends serial commun ication (it p laces it in the hold status). "Figure 24. HOLD
Function" shows the timing wavefo rms. The device is placed in the hold status at the falling HOLD edge while the logic
level of SCK is lo w, and it exits fro m the hold status at the rising HOLD edge. When the logic level of SCK is
high, HOLD must not rise or fall. The hold function takes effect when the logic level of CS is low, the hold status is exited
and serial co mmun ication is reset at the rising CS edge. In the hold status, the SO output is in the h igh-impedance state,
and SI and SCK are "don't care".
Figure 24. HOLD Function
CS
Active
Active
HOLD
tHS
tHS
SCK
tHH
tHH
HOLD
tHHZ
SO
tHLZ
High Impedance
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LE25S161
12. Power-on
In order to protect against unintentional writing, CS must be within at VDD-0.3 to VDD+0.3 on power-on. After
power-on, the supply voltage has stabilized at VDD (min) or higher, and waits for tVSL before CS is driven to "Low".
The device is in the standby state after power is turned on.
Figure 25. Power-on Timing
V DD
V DD(Max)
Program, Erase and Write Commands are Ignored
Chip Select ( CS="L") is Not Allow ed
V DD(Min)
tVSL
Reset
State
Full Access Allowed
Read Command is
allow ed
V WI
tPUW
0V
time
Power-up timing
Parameter
Sy mbol
spec
min
max
unit
µs
t VSL
300
Time to Write Operation
t PUW
100
500
µs
Operation Inhibit Voltage
VWI
1.0
1.5
V
VDD (Min) to CS Low
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LE25S161
13. Hardware Data Protection
LE25S161 incorporates a power-on reset function. The following conditions must be met in order to ensure that the power
reset circuit will operate stably.
No guarantees are given for data in the event of an instantaneous power failure occurring during the writing period.
Figure 26. Power-down Timing
V DD
V DD(Max)
V DD(Min)
tPD
0V
vBOT
Power-down timing
Parameter
Sy mbol
power-down time
t PD
power-down v oltage
VBOT
spec
min
max
10
unit
ms
0.2
V
14. Software Data Protection
The LE25S161 eliminates the possibility of unintentional operations by not recognizing commands under the following
conditions.
• When a write command is input and the rising CS edge timing is not in a byte cycle (8 CLK units of SCK)
• When the Page Program data is not in 1-byte increments
• When the Write Status Register command is input for 2 bytes cycles or more
15. Decoupling Capacitor
0.1µF ceramic capacitor must be provided to each device and connected between VDD and VSS in o rder to ensure that the
device will operate stably.
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LE25S161
16. Specifications
16-1. Absolute Maximum Ratings
Parameter
Sy mbol
Conditions
Ratings
unit
Maximum supply v oltage
With respect to VSS
−0.5 to +2.6
V
DC v oltage (all pins)
With respect to VSS
−0.5 to VDD +0.5
V
−55 to +150
°C
Storage temperature
Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
16-2. Operating Conditions
Parameter
Sy mbol
Conditions
Operating supply v oltage
Ratings
unit
1.65 to 1.95
V
−40 to +90
°C
Operating
ambient temperature
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
16-3. Data retention, Rewriting cycles
Parameter
Sy mbol
condition
Status resister write
Rewrite Cy cles
min
max
1,000
cy cles/
cy cRW
Program/Erase
Data retention
Sector
100,000
tDRET
unit
20
y ear
16-4. Pin Capacitance at Ta=25°C, f=1MHz
Ratings
Parameter
Sy mbol
Conditions
unit
max
Output pin capacitance
C SO
VSO=0V
12
pF
Input pin Capacitance
C IN
VIN =0V
6
pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for
some of the sampled devices.
16-5. AC Test Conditions
Input pulse level············· 0.2VDD to 0.8VDD
Input rising/falling time ··· 5ns
Input timing level··········· 0.3VDD, 0.7VDD
Output timing level········· 1/2×VDD
Output load ··················· 15pF
Note: As the test conditions for "typ", the measurements are conducted using 1.8V for VDD at room temperature.
0.8VDD
Input level
Input / Output timing level
0.7VDD
1/2VDD
0.3VDD
0.2VDD
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LE25S161
16-6. DC Characteristics
VDD =1.65 to 1.95V
Parameter
Sy mbol
Conditions
Ratings
min
Low-Power Read
(RDLP: 03h)
SCK=
0.1VDD/0.9VDD,
Read mode
operating current
unit
ty p
max
33.33MHz
3.5
4.5
mA
33.33MHz
4.0
5.5
mA
70MHz
6.0
7.0
mA
33.33MHz
5.0
7.0
mA
50MHz
6.0
8.0
mA
High-Speed Read
(RDHS: 0Bh)
I CCR
HOLD= WP =
0.9VDD,
SO=open
Dual Output Read
(RDDO: 3Bh)
or
Dual I/O Read
(RDIO: BBh)
Small Sector Erase operating current
Sector Erase operating current
Chip Erase operating current
I CCSSE
t SSE=max,
Av erage current
3.5
4.5
mA
I CCSE
t SE=max
Av erage current
3.5
4.5
mA
I CCCHE
t CHE=max
Av erage current
4.0
5.0
mA
6.5
7.5
mA
5.0
6.5
mA
Normal
Program mode
I CCPP
operating current
Low-Power
Program mode
I CCPPL
operating current
CMOS
standby current
Deep Power-down standby current
t PP=max
Av erage current
t PPL=max
Av erage current
I SB
CS=VDD , HOLD =WP=VDD ,
SI=VSS/VDD, SO=open,
9
50
µA
I DSB
CS=VDD , HOLD =WP=VDD ,
SI=VSS/VDD, SO=open,
3.0
12
µA
Input leakage current
I LI
2.0
µA
Output leakage current
I LO
2.0
µA
Input low v oltage
VIL
−0.3
0.3VDD
V
Input high v oltage
VIH
0.7VDD
VDD +0.3
V
Output low v oltage
VOL
Output high v oltage
VOH
I OL=100µA, VDD =VDD min
0.2
I OL=1.6mA, VDD =VDD min
0.4
V
I OH =−100µA, VDD =VDD min
VDD -0.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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LE25S161
16-7. AC Characteristics
Ratings
Parameter
Clock
f requency
Sy mbol
Low-Power Read (RDLP: 03h)
Dual Output Read (RDDO: 3Bh)
Dual I/O Read
(RDIO: BBh)
min
ty p
33.33
50
f CLK
Other instructions
t RF
33.33MHz
width
SCK logic low lev el pulse
width
MHz
70
Input signal rising/f alling time
SCK logic high lev el pulse
unit
max
50MHz
0.1
11
t CLHI
8
70MHz
6
33.33MHz
11
50MHz
V/ns
t CLLO
70MHz
ns
8
ns
6
CS activ e setup time
t SLCH
6
ns
CS not activ e hold time
t CHSL
6
ns
Data setup time
t DS
3
ns
Data hold time
t DH
3
ns
CS wait pulse width
t CPH
20
ns
CS activ e hold time
t CHSH
6
ns
CS not activ e setup time
t SHCH
6
Output high impedance time f rom CS
ns
t CHZ
8
10
33.33MHz
Output data time f rom SCK
50MHz
ns
8
tV
ns
8
70MHz
Output data hold time
t HO
1
ns
Output low impedance time f rom SCK
t CLZ
0
ns
t HS
6
ns
HOLD hold time
t HH
6
Output low impedance time f rom HOLD
t HLZ
8
ns
Output high impedance time f rom HOLD
t HHZ
8
ns
HOLD setup time
WP setup time
t WPS
20
WP hold time
t WPH
20
Write status register time
Normal Page Programming
cy cle time
Low-Power Page Programming
cy cle time
Small Sector Erase cy cle time
Sector Erase cy cle time
Chip Erase cy cle time
Recov ery time f rom suspend
Deep Power-down time
t WRSR
256By te
nBy te
t PP
ns
ns
5
8
0.40
0.70
0.14 +
n * 0.26/256
256By te
nBy te
ns
0.60
t PPL
0.14 +
n * 0.46/256
ms
ms
0.35 + n * 0.35/256
1.20
ms
0.50 + n * 0.70/256
t SSE
10
120
ms
t SE
15
150
ms
t CHE
210
2400
ms
t RSUS
40
µs
t DP
5
µs
Deep Power-down recov ery time
t RDP
40
µs
Internal reset time
tRST
40
µs
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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48
LE25S161
17. Timing waveforms
Figure 27. Serial Input Timing
tCPH
CS
tCHSL
tSLCH
tCLHI
tCLLO
tCHSH
tSHCH
SCK
tDS
SI
tDH
DATA VALID
High Impedance
SO
High Impedance
Figure 28. Serial Output Timing
CS
SCK
tCLZ
SO
tHO
tCHZ
DATA VALID
tV
SI
Figure 29. Hold Timing
CS
tHH
tHH
tHS
tHS
SCK
HOLD
tHLZ
tHHZ
High Impedance
SI
Figure 30. Status Resister Write Timing
CS
tWPS
tWPH
WP
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49
LE25S161
Figure 31. Write Status Register Flowcharts
Write Status Register
Start
06h
01h
Data
Write enable
(WREN)
Set Write Status
Register command
(WRSR)
Program start on rising
edge of CS
05h
Set
Read Status Register
command
(RDSR)
NO
Bit 0= "0" ?
YES
End of Write Status
Register
* Automatically placed in w rite disabled state
at the end of the Write Status Register
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LE25S161
Figure 32. Small Sector Erase Flowcharts
Small Sector Erase
Sector Erase
Start
Start
06h
20h / D7h
Write enable
(WREN)
06h
Set Small Sector
Erase command
(SSE)
D8h
Address 1
Address 1
Address 2
Address 2
Address 3
Address 3
Start erase on rising
edge of CS
Start erase on rising
edge of CS
Set
Read Status Register
command
(RDSR)
05h
NO
Figure 33. Sector Erase Flowcharts
05h
NO
Write enable
(WREN)
Set Sector Erase
command
(SE)
Set
Read Status Register
command
(RDSR)
Bit 0 = "0" ?
Bit 0 = "0" ?
YES
YES
End of erase
End of erase
* Automatically placed in write dis abled
state at the end of the erase
* Automatically placed in w rite disabled
state at the end of the erase
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LE25S161
Figure 34. Chip Erase Flowcharts
Chip Erase
Start
06h
60h / C7h
Write enable
(WREN)
Set Chip Erase
command
(CHE)
Start erase on rising
edge of CS
05h
Set
Read Status Register
command
(RDSR)
Bit 0 = "0" ?
YES
NO
End of erase
* Automatically placed in w rite disabled state at
the end of the erase
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LE25S161
Figure 35. Page Program Flowcharts
Page Program
Start
06h
Write enable
(WREN)
02h or 0Ah
Address 1
Address 2
Set Page Program
command
(PP/PPL)
*02h: Normal Program Mode (PP)
*0Ah: Low -Power Program Mode (PPL)
Address 3
Data 0
Data n
Start program on rising
edge of CS
Set
Read Status Register
command
(RDSR)
05h
NO
Bit 0= "0" ?
YES
End of
programming
* Automatically placed in w rite disabled state at
the end of the programming operation.
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53
LE25S161
ORDERING INFORMATION
Package
Shipping (Qty / Packing)
LE25S161MDTWG
Device
SOIC 8, 150 mils
(Pb-Free / Halogen Free)
2000 / Tape & Reel
LE25S161FDTWG
VSOIC8 NB
(Pb-Free / Halogen Free)
3000 / Tape & Reel
LE25S161XATAG
WLCSP8, 2.92x1.53
(Pb-Free / Halogen Free)
4000 / Tape & Reel
LE25S161PCTXG
UDFN8 4x3, 0.8P
(Pb-Free / Halogen Free)
2000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel
Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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54
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