DMP3028LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) ID TC = +25°C 25mΩ @ VGS = -10V -27A 38mΩ @ VGS = -4.5V -22A V(BR)DSS -30V Features 100% Unclamped Inductive Switch (UIS) Test In Production Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions Case: TO252 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) D D TO252 G D G S Top View Pin-Out Top View S Equivalent Circuit Ordering Information (Notes 4) Product DMP3028LK3-13 Notes: Case TO252 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html . Marking Information = Manufacturer’s Marking P3028L= Product Type Marking Code . YYWW = Date Code Marking YY = Year (ex: 14 = 2014) WW = Week (01 - 53) P3028L YYWW DMP3028LK3 Document Number DS37257 Rev. 2 - 2 1 of 7 www.diodes.com December 2014 © Diodes Incorporated DMP3028LK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V VDSS Value -30 Units V VGSS ±20 V Steady State TC = +25°C TC = +70°C ID -27 -22 A t<10s TA = +25°C TA = +70°C ID -11 -8.6 A -2.5 A -40 -22 24 A A mJ Maximum Body Diode Continuous Current IS IDM IAS EAS Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) PD TA = +70°C Steady state t<10s TA = +25°C Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) RθJA PD RθJC 1.8 45 29 4.5 TJ, TSTG -55 to +150 TA = +70°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Value 1.6 1.0 77 34 2.8 Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage °C/W W °C/W °C Symbol Min Typ Max BVDSS -30 — — V VGS = 0V, ID = -250µA IDSS — — -1 µA VDS = -30V, VGS = 0V IGSS — — 100 nA VGS = 20V, VDS = 0V VGS(th) -1 V VDS = VGS, ID = -250µA VGS = -10V, ID = -7A — -2.4 20 25 29 38 Unit mΩ RDS(ON) — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance VSD — -0.7 -1.2 V Ciss — 1241 — pF Output Capacitance Coss — 147 — pF Reverse Transfer Capacitance Gate Resistance Crss — pF Ω Total Gate Charge (VGS = -10V) — — 110 15 — RG Qg Total Gate Charge (VGS = -4.5V) Gate-Source Charge Qg Qgs Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time tr Turn-Off Delay Time tD(off) — — tf — Static Drain-Source On-Resistance Notes: W (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Turn-Off Fall Time Units 22 — — nC — 11 — nC — 3.5 — nC Qgd — 4.7 — nC tD(on) — 9.7 17.1 — ns ns 60.5 — — 40.4 — ns ns Test Condition VGS = -4.5V, ID = -6.2A VGS = 0V, IS = -2.1A VDS = -15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -7A VGS = -10V, VDD = -15V, RGEN = 6Ω ID = -7A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP3028LK3 Document Number DS37257 Rev. 2 - 2 2 of 7 www.diodes.com December 2014 © Diodes Incorporated DMP3028LK3 20 20 VGS = -10V VGS = -3.5V VDS = -5.0V VGS = -4.5V 15 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.0V VGS = -5.0V VGS = -3.0V 10 5 15 10 5 TA = 85C TA = 150C TA = 125C VGS = -2.5V TA = 25C T A = -55C 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.05 0.04 VGS = -4.5V 0.03 VGS = -10V 0.02 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 1 2 3 4 -V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.05 VGS = -4.5V TA = 125C 0.04 TA = 150C TA = 85°C TA = 25°C 0.03 TA = -55°C 0.02 0.01 0 30 1.8 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.05 R DS(on), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 VGS = -10V ID = -10A 1.6 1.4 VGS = -5V ID = -5A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP3028LK3 Document Number DS37257 Rev. 2 - 2 3 of 7 www.diodes.com 0.04 VGS = -5.0V ID = -5.0A 0.03 VGS = -10V ID = -10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature December 2014 © Diodes Incorporated DMP3028LK3 V GS(TH), GATE THRESHOLD VOLTAGE (V) 3 20 -IS, SOURCE CURRENT (A) 2.5 2 -I D = 1mA -ID = 250µA 1.5 1 15 10 TA= 150C TA= 125C 5 TA= 25C 0.5 TA= -55C 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10000 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 TA = 150°C 9 -V GS, GATE-SOURCE VOLTAGE (V) -IDSS, LEAKAGE CURRENT (nA) TA= 85C 1000 TA = 125°C 100 TA = 85°C TA = 25°C 10 1 8 7 6 VDS = -15V ID = -7A 5 4 3 2 1 0.1 0 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 10000 0 5 10 15 20 Qg , TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 25 100 ID, DRAIN CURRENT (A) CT, JUNCTION CAPACITANCE (pF) R DS(on) Limited Ciss 1000 100 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 TJ (m ax ) = 150°C PW = 100µs TA = 25°C 10 VGS = 10V Single Pulse 0.01 DUT on 1 * MRP Board 0 5 10 15 20 25 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Junction Capacitance DMP3028LK3 Document Number DS37257 Rev. 2 - 2 30 4 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 December 2014 © Diodes Incorporated DMP3028LK3 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R thjc(t) = r(t) * Rthjc Single Pulse 0.001 0.000001 R thjc = 4°C/W Duty Cycle, D = t1/ t2 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance DMP3028LK3 Document Number DS37257 Rev. 2 - 2 5 of 7 www.diodes.com December 2014 © Diodes Incorporated DMP3028LK3 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E A b3 7°±1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm 2.74REF Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 C Y X DMP3028LK3 Document Number DS37257 Rev. 2 - 2 6 of 7 www.diodes.com December 2014 © Diodes Incorporated DMP3028LK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DMP3028LK3 Document Number DS37257 Rev. 2 - 2 7 of 7 www.diodes.com December 2014 © Diodes Incorporated