POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF857 FINAL SPECIFICATION Repetitive voltage up to Mean on-state current Surge current Turn-off time 1200 830 9 25 V A kA µs mag 06 - ISSUE : 05 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 1200 V V RSM Non-repetitive peak reverse voltage 125 1300 V V DRM Repetitive peak off-state voltage 125 1200 I RRM Repetitive peak reverse current V=VRRM 125 50 mA I DRM Repetitive peak off-state current V=VDRM 125 50 mA 830 A V CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled I T (AV) Mean on-state current 180° sin, 1 kHz, Th=55°C, double side cooled I TSM Surge on-state current, non repetitive sine wave, 10 ms I² t I² t without reverse voltage V T On-state voltage On-state current = 25 2 V V T(TO) Threshold voltage 125 1,38 V T On-state slope resistance 125 0,435 mohm r 125 1000 A 795 A 8,5 kA 361 x1E3 A²s SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 1200 A, gate 20V 10 ohm 125 400 A/µs dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 20V, 10 ohm , tr=1 µs 25 0,4 µs tq Circuit commutated turn-off time 125 25 µs Q rr Reverse recovery charge di/dt = dV/dt = 20 A/µs, I= 1000 I = 400 A 200 V/µs , up to 75% di/dt = 60 A/µs, I= 1000 I = 1000 A VR = 50 V I rr Peak reverse recovery current I H Holding current, typical VD=5V, gate open circuit I L Latching current, typical VD=12V, tp=30µs A VDRM A 125 300 µC 150 A 25 45 mA 25 70 mA GATE V GT Gate trigger voltage VD=5V 25 3,5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) P GM Peak gate power dissipation P G(AV) Average gate power dissipation Pulse width 100 µs 25 5 V 25 150 W 25 3 W 37 °C/kW MOUNTING R th(j-h) Thermal impedance, DC T j Operating junction temperature F Junction to heatsink, double side cooled Mounting force Mass -30 / 125 °C 11.0 / 13.0 kN 290 tq code ORDERING INFORMATION : ATF857 S 12 L tq code standard specification VDRM&VRRM/100 D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs T 60 µs U 70 µs W 80 µs X 100µs Y 150µs g ATF857 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 05 SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARGE Tj = 125 °C 1000 1000 A 900 800 Qrr [µC] 700 500 A 600 500 200 A 400 300 200 100 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 125 °C 700 1000 A 600 500 A Irr [A] 500 400 200 A 300 200 100 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta di/dt IF ta Softness (s factor) s = tb / ta Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) tb Vr ATF857 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 05 ON-STATE CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 3000 9 8 2500 6 2000 ITSM [kA] On-state Current [A] 7 1500 1000 5 4 3 2 500 1 0 0 0,6 1,1 1,6 2,1 1 2,6 10 On-state Voltage [V] n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 40 35 Zth j-h [°C/kW] 30 25 20 15 10 5 0 0,001 0,01 0,1 1 t[s] 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. Distributed by 100